scholarly journals The effects of filtering RF source phase noise by a low noise, high quality factor actively modelocked laser on the laser’s absolute and relative phase noise

2006 ◽  
Vol 14 (12) ◽  
pp. 5346 ◽  
Author(s):  
Franklyn Quinlan ◽  
Sangyoun Gee ◽  
Sarper Ozharar ◽  
Peter Delfyett
Keyword(s):  
Phase Noise ◽  
Quality Factor ◽  
Relative Phase ◽  
Low Noise ◽  
High Quality Factor ◽  
High Quality ◽  
Source Phase

scholarly journals Low phase noise oscillator stabilised by high quality factor AFSIW resonators

2018 ◽  
Vol 54 (19) ◽  
pp. 1128-1130 ◽  
Author(s):  
Zhiqiang Liu ◽  
Jinping Xu ◽  
Wenbo Wang
Keyword(s):  
Phase Noise ◽  
Quality Factor ◽  
High Quality Factor ◽  
High Quality ◽  
Low Phase Noise

High-quality factor multipath differential fractal inductor for wireless applications

Circuit World ◽  
2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Sunil Kumar Tumma ◽  
Bheema Rao Nistala
Keyword(s):  
Integrated Circuits ◽  
Quality Factor ◽  
Skin Depth ◽  
Low Noise ◽  
Proximity Effects ◽  
High Quality Factor ◽  
Design System ◽  
High Quality ◽  
Content Type ◽  
Wireless Applications

Purpose The purpose of this study is to develop a high-quality factor fractal inductor for wireless applications such as satellite, WLAN, Bluetooth, microwave, radar and cellular phone. Design/methodology/approach The Hilbert fractal curve is used in the implementation of the proposed inductor. In the proposed inductor, the metal width has split into multiple paths based on the skin depth of the metal. The simulations of the proposed inductor are performed in 180 nm CMOS technology using the Advanced Design System EM simulator. Findings The multipath technique reduces the skin effects and proximity effects, which, in turn, decreases the series resistance of the inductor and attains high-quality factor over conventional fractal inductor for the equal on-chip area. Research limitations/implications The width of the path has chosen higher than the skin depth of the metal for a required operating frequency. Due to cost constraints, the manufacturing of the proposed fractal inductor is limited to a single layer. Practical implications The proposed inductor will be useful for the implementation of critical building blocks of radio frequency integrated circuits and monolithic microwave integrated circuits such as low-noise amplifiers, voltage-controlled oscillators, mixers, filters and power amplifiers. Originality/value This paper presents for the first time the use of a multipath technique for the fractal inductors to enhance the quality factor.

A Long Bar Type Silicon Resonator with a High Quality Factor

2014 ◽  
Vol 134 (2) ◽  
pp. 26-31 ◽  
Author(s):  
Nguyen Van Toan ◽  
Masaya Toda ◽  
Yusuke Kawai ◽  
Takahito Ono
Keyword(s):  
Quality Factor ◽  
High Quality Factor ◽  
High Quality ◽  
Type Silicon ◽  
Silicon Resonator

scholarly journals Coherent suppression of backscattering in optical microresonators

2020 ◽  
Vol 9 (1) ◽  
Author(s):  
Andreas Ø. Svela ◽  
Jonathan M. Silver ◽  
Leonardo Del Bino ◽  
Shuangyou Zhang ◽  
Michael T. M. Woodley ◽  
...  
Keyword(s):  
Quality Factor ◽  
Bulk Material ◽  
Near Field ◽  
High Quality Factor ◽  
Dual Frequency ◽  
High Quality ◽  
Frequency Combs ◽  
Optical Microresonators ◽  
Whispering Gallery ◽  
The Stability

AbstractAs light propagates along a waveguide, a fraction of the field can be reflected by Rayleigh scatterers. In high-quality-factor whispering-gallery-mode microresonators, this intrinsic backscattering is primarily caused by either surface or bulk material imperfections. For several types of microresonator-based experiments and applications, minimal backscattering in the cavity is of critical importance, and thus, the ability to suppress backscattering is essential. We demonstrate that the introduction of an additional scatterer into the near field of a high-quality-factor microresonator can coherently suppress the amount of backscattering in the microresonator by more than 30 dB. The method relies on controlling the scatterer position such that the intrinsic and scatterer-induced backpropagating fields destructively interfere. This technique is useful in microresonator applications where backscattering is currently limiting the performance of devices, such as ring-laser gyroscopes and dual frequency combs, which both suffer from injection locking. Moreover, these findings are of interest for integrated photonic circuits in which back reflections could negatively impact the stability of laser sources or other components.

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