A High-intensity Bowtie Nano-aperture Vertical-Cavity Surface-Emitting Laser for Ultrahigh-density Near-field Optical Data Storage

2007 ◽  
Author(s):  
Zhilong Rao ◽  
Lambertus Hesselink ◽  
James S. Harris
Keyword(s):  
Data Storage ◽  
High Intensity ◽  
Near Field ◽  
Optical Data Storage ◽  
Optical Data ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Ultrahigh Density ◽  
Vertical Cavity

Vertical-Cavity Surface-Emitting Lasers for Optical Data Storage

1996 ◽  
Vol 35 (Part 1, No. 1B) ◽  
pp. 506-507 ◽  
Author(s):  
Hyun-Kuk Shin ◽  
Il Kim ◽  
Eui-Joong Kim ◽  
Jin-Hwan Kim ◽  
Eun-Kyung Lee ◽  
...  
Keyword(s):  
Data Storage ◽  
Optical Data Storage ◽  
Optical Data ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

scholarly journals Radiation-Hard ASICs for Optical Data Transmission in the ATLAS Pixel Detector

2005 ◽  
Vol 20 (16) ◽  
pp. 3802-3804
Author(s):  
K. E. Arms ◽  
K. K. Gan ◽  
M. Johnson ◽  
H. Kagan ◽  
R. Kass ◽  
...  
Keyword(s):  
Data Transmission ◽  
Hadron Collider ◽  
Optical Data ◽  
Cavity Surface ◽  
Pixel Detector ◽  
Final Design ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Radiation Hard ◽  
Vertical Cavity

We have developed two radiation-hard ASICs for optical data transmission in the ATLAS pixel detector at the CERN Large Hadron Collider (LHC): a driver chip for a Vertical Cavity Surface Emitting Laser (VCSEL) diode for 80 Mbit/s data transmission from the detector, and a Bi -Phase Mark decoder chip to recover the control data and 40 MHz clock which is received optically by a PIN diode on the detector side. We present comprehensive results from the final design and from irradiation studies of both circuits with 24 GeV protons up to a total dose of 62 Mrad.

Fabrication of Micro-Aperture Surface Emitting Laser for Near Field Optical Data Storage

1999 ◽  
Vol 38 (Part 2, No. 11B) ◽  
pp. L1327-L1329 ◽  
Author(s):  
Satoshi Shinada ◽  
Fumio Koyama ◽  
Nobuhiko Nishiyama ◽  
Masakazu Arai ◽  
Kenya Goto ◽  
...  
Keyword(s):  
Data Storage ◽  
Near Field ◽  
Optical Data Storage ◽  
Optical Data ◽  
Surface Emitting Laser

scholarly journals Study of Gain Switching in Vertical Cavity Surface Emitting Laser under Different Electrical Pulse Inputs

2020 ◽  
Vol 70 (5) ◽  
pp. 538-541
Author(s):  
K. Murali Krishna ◽  
M. Ganesh Madhan ◽  
P. Ashok
Keyword(s):  
Pulse Width ◽  
High Speed ◽  
Peak Power ◽  
Pulse Generation ◽  
Optical Data ◽  
Cavity Surface ◽  
Gain Switching ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Vertical cavity surface emitting laser (VCSEL) is a strong candidate for short pulse generation among the other semiconductor lasers in the era of laser technology. A 1550 nm, low power VCSEL is excited under different current shapes and the chief laser parameters are found out. The concept of gain switching under various current profiles are utilized effectively to bring out maximum laser power with minimum pulse width, which are the essential factors for long haul high speed optical data transmission. For a haversine electrical current input with 3.7 Ith amplitude, a laser peak power of 2.2 mW at 57 ps pulse width is obtained. In the case of trapezoidal pulse, 67 ps pulse width is obtained for 2.6 Ith current amplitude. It is also observed that square pulse of amplitude 2 Ith produces short optical pulse of 0.887 mW peak power and 89 ps width which shows the best performance when compared to other forms of pulses discussed in this work at the same input condition.

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