First Demonstration of Extinction Ratio Improvement by Two - Wave Competition in Ultra-Long SOAs

2005 ◽  
Author(s):  
B. Sartorius ◽  
G. Bramann ◽  
U. Busolt ◽  
H.-P. Nolting ◽  
M. Schlak ◽  
...  
Keyword(s):  
Extinction Ratio ◽  
Wave Competition

Frequency Encoded All Optical Tri-state Logic Gates NOT and NAND Using Semiconductor Optical Amplifier Based Interferometric Switches

2020 ◽  
Vol 10 (4) ◽  
pp. 369-380
Author(s):  
K. Maji ◽  
K. Mukherjee ◽  
A. Raja
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Extinction Ratio ◽  
Optical Power ◽  
Logic Gates ◽  
Optical Amplifier ◽  
All Optical ◽  
State Frequency ◽  
Spontaneous Noise ◽  
First Time ◽  
Practical Feasibility

All optical tri-state frequency encoded logic gates NOT and NAND are proposed and numerically investigated using TOAD based interferometric switch for the first time to the best of our knowledge. The optical power spectrum, extinction ratio, contrast ration, and amplified spontaneous noise are calculated to analyze and confirm practical feasibility of the gates. The proposed device works for low switching energy and has high contrast and extinction ratio as indicated in this work.

scholarly journals Performance analysis of carrier depletion silicon PIN phase shifter

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Jesuwanth Sugesh Ramesh Gabriel ◽  
Sivasubramanian Arunagiri
Keyword(s):  
Performance Analysis ◽  
Bit Error Rate ◽  
Error Rate ◽  
Phase Shifter ◽  
Extinction Ratio ◽  
Fibre Length ◽  
Data Rate ◽  
Operating Voltage ◽  
Data Centre ◽  
Mach Zehnder Modulator

AbstractIn this paper, we report the performance of a carrier depletion Silicon PIN phase shifter with over layer of 130 nm. It is observed that an optimum intrinsic gap of 250 nm for a device length of 5 mm at 2 V, resulted in Extinction Ratio (ER) of 23.41 dB and Bit Error Rate (BER) of 1.00 × 10−7 is obtained for 50 Gbps. The phase shifter is also designed for length 2 mm with an intrinsic gap of 100 nm at an operating voltage <4 V. The study also reveals that the proposed design for Mach-Zehnder modulator operating at a data rate of 100 Gbps for the concentration of P = 7 × 1017 cm−3 and N = 5 × 1017 cm−3 gives better BER and phase performance. The proposed design was also analysed in an intra-data centre communication setup of fibre length 15 km.

scholarly journals A high extinction ratio plasmonic SU-8 waveguide polarizer

2021 ◽  
Vol 487 ◽  
pp. 126798
Author(s):  
Peyman Malekzadeh ◽  
Gholam-Mohammad Parsanasab ◽  
Hamed Nikbakht ◽  
Ezeddin Mohajerani ◽  
Majid Taghavi ◽  
...  
Keyword(s):  
Extinction Ratio ◽  
High Extinction Ratio

Polarization rotation-based all-optical AND gate using single semiconductor optical amplifier and implementation of a majority gate

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Ashif Raja ◽  
Kousik Mukherjee ◽  
Jitendra Nath Roy
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Extinction Ratio ◽  
Contrast Ratio ◽  
Optical Amplifier ◽  
Majority Voting ◽  
Polarization Rotation ◽  
All Optical ◽  
Eye Opening ◽  
Amplified Spontaneous Emission Noise ◽  
Quality Factor Q

Abstract Semiconductor optical amplifier-based polarization rotation is utilized in designing all-optical AND gate at 100 Gbps. The AND gate shows high extinction ratio (ER ∼ 15 dB), contrast ratio (CR ∼ 18 dB) and quality factor (Q-factor ∼ 16 dB). The effect of the amplified spontaneous emission noise on the performances is also investigated. The AND gate has relative eye opening (REO) varying from 93.52 to 97.1% for 10–30 dB unsaturated gain. Using the AND gate a majority voting gate is designed and analyzed and has Q ∼ 11.7 dB with REO ∼ 91%.

High extinction‐ratio microstructure fiber based on chalcogenide glasses

2021 ◽  
Author(s):  
Tiesong Xu ◽  
Minghui Zhong ◽  
Xiaolin Liang ◽  
Jia Liu ◽  
Bin Yan ◽  
...  
Keyword(s):  
Chalcogenide Glasses ◽  
Extinction Ratio ◽  
High Extinction Ratio ◽  
Microstructure Fiber

scholarly journals Asymmetric Ge/SiGe coupled quantum well modulators

Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1765-1773
Author(s):  
Yi Zhang ◽  
Jianfeng Gao ◽  
Senbiao Qin ◽  
Ming Cheng ◽  
Kang Wang ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Quantum Well ◽  
Quantum Wells ◽  
High Speed ◽  
Low Voltage ◽  
Extinction Ratio ◽  
High Frequency Response ◽  
Modulation Format ◽  
Silicon Photonic ◽  
Coupled Quantum Well

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.

Mitigating the Effects of Non-Linear Distortion Using Polarizers in Microwave Photonic Link

2019 ◽  
Vol 0 (0) ◽  
Author(s):  
Sarika Singh ◽  
Sandeep K. Arya ◽  
Shelly Singla
Keyword(s):  
Dynamic Range ◽  
Extinction Ratio ◽  
Polarization Angle ◽  
Third Order ◽  
Microwave Photonic ◽  
Linear Behavior ◽  
Spurious Free Dynamic Range ◽  
Non Linear ◽  
Intermodulation Distortions ◽  
Insertion Losses

AbstractA scheme to suppress nonlinear intermodulation distortion in microwave photonic (MWP) link is proposed by using polarizers to compensate inherent non-linear behavior of dual-electrode Mach-Zehnder modulator (DE-MZM). Insertion losses and extinction ratio have also been considered. Simulation results depict that spurious free dynamic range (SFDR) of proposed link reaches to 130.743 dB.Hz2/3. A suppression of 41 dB in third order intermodulation distortions and an improvement of 15.3 dB is reported when compared with the conventional link. In addition, an electrical spectrum at different polarization angles is extracted and 79^\circ is found to be optimum value of polarization angle.

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