P lastic optical fibers containing neodymium-, praseodymium-, and erbium-chelates for optical amplification

2001 ◽  
Author(s):  
K. Kuriki ◽  
S. Nishihara ◽  
Y. Nishizawa ◽  
A. Tagaya ◽  
Y. Koike ◽  
...  
Keyword(s):  
Optical Fibers ◽  
Optical Amplification

scholarly journals Microfluorescence Analysis of Nanostructuring Inhomogeneity in Optical Fibers with Embedded Gallium Oxide Nanocrystals

2012 ◽  
Vol 18 (2) ◽  
pp. 259-265 ◽  
Author(s):  
Valery M. Mashinsky ◽  
Nikita M. Karatun ◽  
Vladimir A. Bogatyrev ◽  
Vladimir N. Sigaev ◽  
Nikita V. Golubev ◽  
...  
Keyword(s):  
Optical Fibers ◽  
Gallium Oxide ◽  
Light Emission ◽  
Fiber Amplifier ◽  
Transition Metal Ions ◽  
Oxide Glasses ◽  
Optical Amplification ◽  
Nanocrystal Growth ◽  
Induced Defects ◽  
Crystallization Degree

AbstractA spectroscopic protocol is proposed to implement confocal microfluorescence imaging to the analysis of microinhomogeneity in the nanocrystallization of the core of fibers belonging to a new kind of broadband fiber amplifier based on glass with embedded nanocrystals. Nanocrystallization, crucial for achieving an adequate light emission efficiency of transition metal ions in these materials, has to be as homogeneous as possible in the fiber to assure optical amplification. This requirement calls for a sensitive method for monitoring nanostructuring in oxide glasses. Here we show that mapping microfluorescence excited at 633 nm by a He-Ne laser may give a useful tool in this regard, thanks to quasi-resonant excitation of coordination defects typical of germanosilicate materials, such as nonbridging oxygens and charged Ge-O-Ge sites, whose fluorescence are shown to undergo spectral modifications when nanocrystals form into the glass. The method has been positively checked on prototypes of optical fibers—preventively characterized by means of scanning electron microscopy and energy dispersive spectroscopy—fabricated from preforms of Ni-doped Li2O-Na2O-Sb2O3-Ga2O3-GeO2-SiO2 glass in silica cladding and subjected to heat treatment to activate gallium oxide nanocrystal growth. The method indeed enables not only the mapping of the crystallization degree but also the identification of drawing-induced defects in the fiber cladding.

Photonic Materials: Introduction

MRS Bulletin ◽  
1988 ◽  
Vol 13 (8) ◽  
pp. 14-15 ◽  
Author(s):  
Alastair M. Glass
Keyword(s):  
Semiconductor Lasers ◽  
Optical Fibers ◽  
High Performance ◽  
Information Technologies ◽  
Photonic Materials ◽  
Wide Bandwidth ◽  
Photonic Switching ◽  
Optical Amplification ◽  
Fundamental Limitations

Optical technologies have advanced dramatically in recent years. In just two decades the transparency of optical fibers has improved by four orders of magnitude. Semiconductor lasers have evolved from a new invention to highly reliable, high performance commercial devices for wide bandwidth optical communications. New approaches to higher frequency modulation, wider bandwidth transmission, more sensitive detection and optical amplification are constantly being developed. Fundamental limitations are sufficiently far removed from current capabilities that considerable further progress can be anticipated. These advances have provided the stimulus for a much broader investigation of the potential of optics in future information technologies in which optics and electronics play complementary roles. This rapidly developing field is referred to as “photonics.” Increasing attention is now being paid to applying optics to wide bandwidth switching systems and to exploring the potential of optics for image processing and computation.Past progress in optical communication can be traced largely to the dramatic progress in optical fiber and compound semiconductor materials technologies. Likewise, future opportunities in photonic switching and information processing will depend critically on the development of improved photonic materials. The future role of optics in these conventionally electronic technologies, and the extent of that role, depends on whether materials can be designed and fabricated with the required characteristics.

Tellurite microstructured optical fibers doped with rare-earths for optical amplification

2013 ◽  
Author(s):  
M. P. Belançon ◽  
M. Fatobene Ando ◽  
J. D. Marconi ◽  
H. N. Yoshimura ◽  
E. F. Chillcce ◽  
...  
Keyword(s):  
Optical Fibers ◽  
Rare Earths ◽  
Optical Amplification ◽  
Microstructured Optical Fibers

Rare-earth-doped polymer optical fibers for optical amplification

2000 ◽  
Author(s):  
Takeyuki Kobayashi ◽  
Ken Kuriki ◽  
Susumu Nishihara ◽  
Yoshiyuki Okamoto ◽  
Yasuhiro Koike
Keyword(s):  
Rare Earth ◽  
Optical Fibers ◽  
Optical Amplification ◽  
Polymer Optical Fibers ◽  
Doped Polymer ◽  
Rare Earth Doped

High-voltage monitoring by the fiber-optic recirculating measuring system

2020 ◽  
pp. 38-44
Author(s):  
A. V. Polyakov ◽  
M. A. Ksenofontov
Keyword(s):  
Optical Fibers ◽  
High Voltage ◽  
Optical Sensors ◽  
Electromagnetic Interference ◽  
Fiber Optic ◽  
Electric Power Industry ◽  
Measuring System ◽  
Voltage Range ◽  
External Electromagnetic Fields ◽  
Optic Communication

Optical technologies for measuring electrical quantities attract great attention due to their unique properties and significant advantages over other technologies used in high-voltage electric power industry: the use of optical fibers ensures high stability of measuring equipment to electromagnetic interference and galvanic isolation of high-voltage sensors; external electromagnetic fields do not influence the data transmitted from optical sensors via fiber-optic communication lines; problems associated with ground loops are eliminated, there are no side electromagnetic radiation and crosstalk between the channels. The structure and operation principle of a quasi-distributed fiber-optic high-voltage monitoring system is presented. The sensitive element is a combination of a piezo-ceramic tube with an optical fiber wound around it. The device uses reverse transverse piezoelectric effect. The measurement principle is based on recording the change in the recirculation frequency under the applied voltage influence. When the measuring sections are arranged in ascending order of the measured effective voltages relative to the receiving-transmitting unit, a relative resolution of 0,3–0,45 % is achieved for the PZT-5H and 0,8–1,2 % for the PZT-4 in the voltage range 20–150 kV.

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