15000-km, 8.2-GHz soliton propagation in a fiber loop using 980-nm diode-pumped amplifiers and a mode-locked monolithic semiconductor laser source

1992 ◽  
Author(s):  
P. B. Hansen ◽  
C. R. Giles ◽  
G. Raybon ◽  
A. H. Gnauck ◽  
U. Koren ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Laser Source ◽  
Soliton Propagation ◽  
Diode Pumped ◽  
Fiber Loop

scholarly journals Passively mode-locked diode-pumped surface-emitting semiconductor laser

2000 ◽  
Vol 12 (9) ◽  
pp. 1135-1137 ◽  
Author(s):  
S. Hoogland ◽  
S. Dhanjal ◽  
A.C. Tropper ◽  
J.S. Roberts ◽  
R. Haring ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Diode Pumped

Compact diode-pumped 598-nm laser source

2002 ◽  
Author(s):  
Joshua Simons ◽  
Helen M. Pask ◽  
Peter Dekker ◽  
James A. Piper
Keyword(s):  
Laser Source ◽  
Diode Pumped

High-Brightness 800-nm Semiconductor Laser Source Based on Spectral Beam Combining

2020 ◽  
Vol 47 (7) ◽  
pp. 0701021
Author(s):  
张俊 Zhang Jun ◽  
彭航宇 Peng Hangyu ◽  
付喜宏 Fu Xihong ◽  
秦莉 Qin Li ◽  
宁永强 Ning Yongqiang ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Laser Source ◽  
High Brightness ◽  
Beam Combining ◽  
Spectral Beam Combining

scholarly journals Continuous-wave 155 μm diode-pumped surface emitting semiconductor laser for broadband multiplex spectroscopy

2007 ◽  
Vol 32 (11) ◽  
pp. 1387 ◽  
Author(s):  
M. Jacquemet ◽  
N. Picqué ◽  
G. Guelachvili ◽  
A. Garnache ◽  
I. Sagnes ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Continuous Wave ◽  
Diode Pumped

Laser-Based Target Preparation in 3D Integrated Electronic Packages

2009 ◽  
Vol 131 (3) ◽  
Author(s):  
Stefan Martens ◽  
Walter Mack ◽  
Frédéric Courtade ◽  
Philippe Perdu ◽  
Juergen Wilde ◽  
...  
Keyword(s):  
Cross Sections ◽  
Ultrashort Pulse ◽  
Electronic Packaging ◽  
Laser Wavelength ◽  
Laser Source ◽  
Preparation Methods ◽  
Target Preparation ◽  
Molding Compound ◽  
Ultrashort Pulse Lasers ◽  
Diode Pumped

The trend toward 3D integration in electronic packaging requires that failure analysis procedures and target preparation methods are adapted from conventional discrete packages to these emerging packaging technologies. This paper addresses the feasibility of laser-based target preparation in 3D integrated devices, especially stacked-die packages. Various laser technologies such as ultrashort-pulse lasers, excimer lasers, and diode-pumped solid-state (DPSS) lasers with different wavelengths and pulse durations were evaluated. In particular, it was found that ultrashort-pulse lasers with pulse durations in the femtosecond range were not suitable for ablation of the molding compound (MC). Picosecond lasers were applicable with certain constraints. It was found that for MCs with high filler content, DPSS lasers with pulse durations in the nanosecond range were the best choice. For the removal of stacked silicon dies, the laser wavelength was the most important factor in artifact-free thinning. Laser cross sections through several silicon dies with remarkably small heat-affected zones were also demonstrated. The distinct removal of the MC, silicon dies, and metal interconnected with a single laser source offers new opportunities for laser-based target preparation in 3D integrated electronic packaging devices.

Continuous-wave single-frequency 295 nm laser source by a frequency-quadrupled optically pumped semiconductor laser

2009 ◽  
Vol 34 (22) ◽  
pp. 3511 ◽  
Author(s):  
Yushi Kaneda ◽  
Mahmoud Fallahi ◽  
Jörg Hader ◽  
Jerome V. Moloney ◽  
Stephan W. Koch ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Continuous Wave ◽  
Single Frequency ◽  
Laser Source ◽  
Optically Pumped

Diode-pumped eye-safe laser source exceeding 1% efficiency

1991 ◽  
Vol 16 (21) ◽  
pp. 1680 ◽  
Author(s):  
Larry R. Marshall ◽  
Jeff Kasinski ◽  
Ralph L. Burnham
Keyword(s):  
Laser Source ◽  
Diode Pumped
Sign in / Sign up

Export Citation Format

Share Document