Linear localized modes at phase-slip defects in one-dimensional waveguide arrays

Author(s):  
P. P. Beličev ◽  
I. Ilić ◽  
M. Stepić ◽  
Y. Tan ◽  
F. Chen
2014 ◽  
Vol 28 (12) ◽  
pp. 1450097 ◽  
Author(s):  
Xiangyu Zhang ◽  
Jinglei Chai ◽  
Dezhao Ou ◽  
Yongyao Li

In this paper, we study the antisymmetry breaking of discrete dipole soliton induced by a phase-slip one-dimensional discrete lattice, which contains on-site self-repulsive nonlinearity. This system can be realized in waveguide arrays system in optics or Bose–Einstein condensate in optical lattice. Different from the symmetry breaking occurring in the ground-state, antisymmetry breaking occurs in the first excited state, which contains antisymmetry. For this system, stable antisymmetric dipole soliton and anti-asymmetric are found, the symmetry transition between them is supercritical type. It is found that, increasing the total norm of the soliton or decreasing the coupled strength of the defect waveguide can lead to the antisymmetry breaking. Such kind of symmetry breaking can lead to the change of the tendency of some characters of the soliton.


2008 ◽  
Vol 33 (9) ◽  
pp. 917 ◽  
Author(s):  
Mario I. Molina ◽  
Yuri S. Kivshar

2010 ◽  
Vol 35 (18) ◽  
pp. 3099 ◽  
Author(s):  
Petra P. Beličev ◽  
Igor Ilić ◽  
Milutin Stepić ◽  
Aleksandra Maluckov ◽  
Yang Tan ◽  
...  

2017 ◽  
Vol 7 ◽  
pp. 3277-3280 ◽  
Author(s):  
N. Habiballah ◽  
M. Zouadi ◽  
A. Arbaoui ◽  
M. Qjani ◽  
J. Dumas

2019 ◽  
Vol 26 (02) ◽  
pp. 1850144 ◽  
Author(s):  
ARAFA H. ALY ◽  
AHMED NAGATY ◽  
Z. KHALIFA

We have theoretically obtained the transmittance properties of one-dimensional phononic crystals incorporating a piezoelectric material as a defect layer. We have used the transfer matrix method in our analysis with/without defect materials. By increasing the thickness of the defect layer, we obtained a sharp peak created within the bandgap, that indicates to the significance of defect layer thickness on the band structure. The localized modes and a particular intensity estimated within the bandgap depend on the piezoelectric material properties. By applying different quantities of an external electric field, the position of the peak shifts to different frequencies. The electric field induces a relative change in the piezoelectric thickness. Our structure may be very useful in some applications such as sensors, acoustic switches, and energy applications.


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