Analysis of Goos H{\"a}nchen Shift from an Orthorhombic Anisotropic Slab with/without Topologically Insulating Surface States

2022 ◽  
Author(s):  
Waleed waseer ◽  
QAisar Naqvi ◽  
M.J. Mughal
Keyword(s):  
Surface States ◽  
Anisotropic Slab

Zero-loss omega-filtered REM and RHEED on the new Zeiss 912

1991 ◽  
Vol 49 ◽  
pp. 616-617
Author(s):  
J.C.H. Spence ◽  
J. Mayer
Keyword(s):  
Electron Microscopy ◽  
Materials Science ◽  
Surface States ◽  
Ccd Camera ◽  
Dark Field ◽  
Ion Pump ◽  
Magnetic Imaging ◽  
Reflection Electron Microscopy ◽  
Diffraction Patterns ◽  
Large Background

The Zeiss 912 is a new fully digital, side-entry, 120 Kv TEM/STEM instrument for materials science, fitted with an omega magnetic imaging energy filter. Pumping is by turbopump and ion pump. The magnetic imaging filter allows energy-filtered images or diffraction patterns to be recorded without scanning using efficient parallel (area) detection. The energy loss intensity distribution may also be displayed on the screen, and recorded by scanning it over the PMT supplied. If a CCD camera is fitted and suitable new software developed, “parallel ELS” recording results. For large fields of view, filtered images can be recorded much more efficiently than by Scanning Reflection Electron Microscopy, and the large background of inelastic scattering removed. We have therefore evaluated the 912 for REM and RHEED applications. Causes of streaking and resonance in RHEED patterns are being studied, and a more quantitative analysis of CBRED patterns may be possible. Dark field band-gap REM imaging of surface states may also be possible.

Thermal Laser Stimulation Technique for AlGaN/GaN HEMT Technologies Improvement

2013 ◽  
Author(s):  
Dominique Carisetti ◽  
Nicolas Sarazin ◽  
Nathalie Labat ◽  
Nathalie Malbert ◽  
Arnaud Curutchet ◽  
...  
Keyword(s):  
Surface States ◽  
Leakage Currents ◽  
Laser Stimulation ◽  
Long Term Stability ◽  
Field Plate ◽  
Gan Hemt ◽  
Die Surface ◽  
Scan Speed ◽  
Stimulation Technique

Abstract To improve the long-term stability of AlGaN/GaN HEMTs, the reduction of gate and drain leakage currents and electrical anomalies at pinch-off is required. As electron transport in these devices is both coupled with traps or surface states interactions and with polarization effects, the identification and localization of the preeminent leakage path is still challenging. This paper demonstrates that thermal laser stimulation (TLS) analysis (OBIRCh, TIVA, XIVA) performed on the die surface are efficient to localize leakage paths in GaN based HEMTs. The first part details specific parameters, such as laser scan speed, scan direction, wavelength, and laser power applied for leakage gate current paths identification. It compares results obtained with Visible_NIR electroluminescence analysis with the ones obtained by the TLS techniques on GaN HEMT structures. The second part describes some failure analysis case studies of AlGaN/GaN HEMT with field plate structure which were successful, thanks to the OBIRCh technique.

Influence of Surface States on Gas Response Properties of Pt/TiO2

2012 ◽  
Vol 27 (9) ◽  
pp. 928-932
Author(s):  
Mao-Lin ZHANG ◽  
Zhan-Heng YUAN ◽  
Jian-Ping SONG ◽  
Cheng ZHENG
Keyword(s):  
Surface States ◽  
Response Properties ◽  
Gas Response

Softsensorgestützte Oberflächenkonditionierung beim Außenlängsdrehen 42CrMo4/Development of a reference force model for soft sensor supported surface conditioning during longitudinal turning of AISI 4140 QT

2020 ◽  
Vol 110 (11-12) ◽  
pp. 758-762
Author(s):  
Daniel Gauder ◽  
Michael Biehler ◽  
Benedict Stampfer ◽  
Benjamin Häfner ◽  
Volker Schulze ◽  
...  
Keyword(s):  
White Layer ◽  
Surface States ◽  
Soft Sensor ◽  
Sensor Technology ◽  
Force Model ◽  
Destructive Testing ◽  
Surface Conditioning ◽  
Testing Technology ◽  
Process Detection ◽  
Longitudinal Turning

Das Forschungsprojekt „Prozessintegrierte Softsensorik zur Oberflächenkonditionierung beim Außenlängsdrehen von 42CrMo4“ widmet sich der Entstehung und der In-process-Erfassung von industriell relevanten Randschichtzuständen. Im Speziellen werden sogenannte White Layer und Eigenspannungszustände untersucht. Durch die modulare Verknüpfung von zerstörungsfreier Prüftechnik, Simulationsergebnissen und Prozesswissen mittels Datenfusion wird ein Softsensor erforscht. Dieser soll im Rahmen einer adaptiven Regelung des Drehprozesses eingesetzt werden und eine gezielte Einstellung von vorteilhaften Randschichtzuständen erlauben. The research project „Process-integrated soft sensor technology for surface conditioning during external longitudinal turning of 42CrMo4“ is dedicated to the formation and in-process-detection of surface layers with industrial relevance. In particular, so-called white layers and residual stresses are investigated. A soft sensor is being researched through the modular combination of non-destructive testing technology and process knowledge by means of data fusion. This is to be used in the context of an adaptive control of the turning process in order to adjust beneficial surface states.

Electronic and Vibrational Properties of Single Crystal Surfaces of NiAl

1986 ◽  
Vol 83 ◽  
Author(s):  
S.-C. Lui ◽  
J. M. Mundenar ◽  
E. W. Plummer ◽  
M. E. Mostoller ◽  
R. M. Nicklow ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Nearest Neighbor ◽  
Surface States ◽  
Active Surface ◽  
Atomic Displacement ◽  
Inelastic Electron ◽  
Crystal Surfaces ◽  
Single Crystal Surfaces ◽  
Nial Alloy ◽  
Bulk Surface

ABSTRACTSurface and bulk electronic structure of the ordered NiAl alloy were measured using angle resolved photoelectron spectroscopy. The measured bulk d-bands (Ni like) were observed to be narrower than theoretically calculated d band widths which are 20 to 40% wider (depending upon what is used as a measure of the width). At least two surface states were observed on both the (110) and (111) surfaces. The nature of these surface states and their relationship to the bulk band structure is discussed. Dispersion of bulk phonons was measured by neutron scattering and fitted with a fourth nearest neighbor Born-von Karman model. Dipole active surface phonons on the (110) and (111) surfaces were observed by inelastic electron scattering and the frequencies also calculated assuming a truncated bulk surface. The calculated surface modes present a qualitative picture of the atomic displacement at each surface and also show that the surface phonon energy and intensity depends upon the structure of the surface.

Sign in / Sign up

Export Citation Format

Share Document