Numerical analysis of optical properties of oblate semi-spheroid-shaped quantum dots coupled to wetting layer

2015 ◽  
Vol 32 (6) ◽  
pp. 1097 ◽  
Author(s):  
Mohammadreza Shahzadeh ◽  
Mohammad Sabaeian
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Numerical Analysis ◽  
Wetting Layer

scholarly journals Quantum Confined Stark Effect on the Linear and Nonlinear Optical Properties of SiGe/Si Semi Oblate and Prolate Quantum Dots Grown in Si Wetting Layer

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1513
Author(s):  
Varsha ◽  
Mohamed Kria ◽  
Jawad El Hamdaoui ◽  
Laura M. Pérez ◽  
Vinod Prasad ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Quantum Dot ◽  
Electric Field ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Wetting Layer ◽  
Non Linear ◽  
Linear Optical Properties ◽  
Linear Optical

We have studied the parallel and perpendicular electric field effects on the system of SiGe prolate and oblate quantum dots numerically, taking into account the wetting layer and quantum dot size effects. Using the effective-mass approximation in the two bands model, we computationally calculated the extensive variation of dipole matrix (DM) elements, bandgap and non-linear optical properties, including absorption coefficients, refractive index changes, second harmonic generation and third harmonic generation as a function of the electric field, wetting layer size and the size of the quantum dot. The redshift is observed for the non-linear optical properties with the increasing electric field and an increase in wetting layer thickness. The sensitivity to the electric field toward the shape of the quantum dot is also observed. This study is resourceful for all the researchers as it provides a pragmatic model by considering oblate and prolate shaped quantum dots by explaining the optical and electronic properties precisely, as a consequence of the confined stark shift and wetting layer.

OPTICAL PROPERTIES OF POPULATED InAs/GaAs QUANTUM DOTS

2003 ◽  
Vol 02 (04n05) ◽  
pp. 265-269
Author(s):  
JIA-REN LEE ◽  
C.-R. LU ◽  
W. I. LEE ◽  
S. C. LEE
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Energy Level ◽  
Energy Levels ◽  
Wetting Layer ◽  
Photoluminescence Spectra ◽  
Inas Quantum Dots ◽  
Different Temperatures ◽  
Spectral Profiles ◽  
Equal Spacing

The optical properties of InAs/GaAs Quantum Dots have been studied by comparing the photoreflectance and photoluminescence spectra at different temperatures. The photoreflectance relative spectral intensity between the contributions from InAs wetting layer and the GaAs increases with the decreasing of temperature. The photoluminescence spectral profiles consist of contributions from the equal spacing energy levels of the InAs quantum dots. Since the quantum dot transitions were observed in the photoluminescence spectra and the wetting layer transitions were observed in the photoreflectance spectra, we propose that the Fermi level of the system is located between energy level of the wetting layer and the populated energy level of the quantum dots.

Growth and optical properties of GaSb/GaAs type-II quantum dots with and without wetting layer

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DH01 ◽  
Author(s):  
Takuya Kawazu ◽  
Takeshi Noda ◽  
Takaaki Mano ◽  
Yoshiki Sakuma ◽  
Hiroyuki Sakaki
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Type Ii ◽  
Wetting Layer

Optical properties of InGaAs quantum dots formed on InAlAs wetting layer

2001 ◽  
Vol 224 (1-2) ◽  
pp. 41-46
Author(s):  
Y.C. Zhang ◽  
C.J. Huang ◽  
B. Xu ◽  
X.L. Ye ◽  
D. Ding ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Wetting Layer
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