ACCURATE DETERMINATION of TRANSPARENCY CURRENT in PACKAGED SEMICONDUCTOR LASERS and SEMICONDUCTOR OPTICAL AMPLIFIERS

With the development of 5G, mobile communication, and optical communication technologies, semiconductor optical amplifiers (SOAs) have become an important research topic. However, most SOA-related studies have focused on a technical discussion or market research but have failed to indicate the critical SOA technologies and the SOA technology development trends. Therefore, this study analyzes SOA patents and constructs a technology network for SOA patents. The results indicate that the critical SOA technologies are mainly used in lasers, semiconductor lasers, light guides, electromagnetic wave transmission communication other than radio-wave communication, and devices controlling light sources. Among the five critical SOA technologies, lasers (H01S3) account for the highest percentage at 22.21%. Consequently, the critical technologies do not focus on specific technology fields but have characteristics of multiple technology fields. In addition, considerable development has occurred in semiconductor lasers in recent years. Finally, patentee analysis indicates that for SOA technologies, the public sector and academia play relatively weak roles in early technology development or following technology development. However, with the rapid development of mobile communication and optical communication, the government of each country can consider investing additional R&D funds and resources in the future. This study constructs a network model for patent technologies to explore the development tendencies for SOA technologies. This model can be used as a reference for R&D resource management and the promotion of new technologies.

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A quantitative approach to inner shell losses

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010010977x ◽

1978 ◽

Vol 36 (1) ◽

pp. 526-527 ◽

Cited By ~ 2

Author(s):

R.D. Leapman ◽

P. Rez ◽

D.F. Mayers

Keyword(s):

Energy Transfer ◽

Cross Section ◽

Cross Sections ◽

Accurate Determination ◽

Background Intensity ◽

Core Excitation ◽

Quantitative Basis ◽

Cross Section Differential ◽

Bound Electrons

Microanalysis by EELS has been developing rapidly and though the general form of the spectrum is now understood there is a need to put the technique on a more quantitative basis (1,2). Certain aspects important for microanalysis include: (i) accurate determination of the partial cross sections, σx(α,ΔE) for core excitation when scattering lies inside collection angle a and energy range ΔE above the edge, (ii) behavior of the background intensity due to excitation of less strongly bound electrons, necessary for extrapolation beneath the signal of interest, (iii) departures from the simple hydrogenic K-edge seen in L and M losses, effecting σx and complicating microanalysis. Such problems might be approached empirically but here we describe how computation can elucidate the spectrum shape.The inelastic cross section differential with respect to energy transfer E and momentum transfer q for electrons of energy E0 and velocity v can be written as

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Fast calibration of CBED patterns for quantitative analysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100149209 ◽

1993 ◽

Vol 51 ◽

pp. 674-675

Author(s):

M.A. Gribelyuk ◽

M. Rühle

Keyword(s):

Reciprocal Lattice ◽

Accurate Determination ◽

Incident Beam ◽

Crystal Thickness ◽

Structure Model ◽

Beam Direction ◽

Transmitted Beam ◽

Reciprocal Vector ◽

On Line

A new method is suggested for the accurate determination of the incident beam direction K, crystal thickness t and the coordinates of the basic reciprocal lattice vectors V1 and V2 (Fig. 1) of the ZOLZ plans in pixels of the digitized 2-D CBED pattern. For a given structure model and some estimated values Vest and Kest of some point O in the CBED pattern a set of line scans AkBk is chosen so that all the scans are located within CBED disks.The points on line scans AkBk are conjugate to those on A0B0 since they are shifted by the reciprocal vector gk with respect to each other. As many conjugate scans are considered as CBED disks fall into the energy filtered region of the experimental pattern. Electron intensities of the transmitted beam I0 and diffracted beams Igk for all points on conjugate scans are found as a function of crystal thickness t on the basis of the full dynamical calculation.

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