RC Circuit Analysis of Long Term Ti:LiNbO3 Bias Stability

1994 ◽  
Author(s):  
S.K. Korotky ◽  
J.J. Veselka
Keyword(s):  
Circuit Analysis ◽  
Bias Stability ◽  
Rc Circuit

scholarly journals Analysis and Compensation of Bias Drift for a Micromachined Spinning-Rotor Gyroscope with Electrostatic Suspension

Sensors ◽  
2020 ◽  
Vol 20 (6) ◽  
pp. 1799
Author(s):  
Shunyue Wang ◽  
Fengtian Han
Keyword(s):  
Compensation Scheme ◽  
Short Term ◽  
Temperature Drift ◽  
Position Sensing ◽  
Bias Drift ◽  
Bias Stability ◽  
Time Drift ◽  
Rotor Structure ◽  
Bias Compensation

Bias stability is one of primary characteristics of precise gyroscopes for inertial navigation. Analysis of various sources of the bias drift in a micromachined electrostatically suspended gyroscope (MESG) indicates that the bias stability is dominated by the temperature-induced drift. The analytical results of temperature drift resulting from the rotor structure and capacitive position sensing electronics are modeled and analyzed to characterize the drift mechanism of the MESG. The experimental results indicate that the bias drift is mainly composed of two components, i.e., rapidly changing temperature drift and slowly changing time drift. Both the short-term and long-term bias drift of the MESG are tested and discussed to achieve online bias compensation. Finally, a neural network based-bias compensation scheme is presented and verified experimentally with improved bias stability of the MESG.

Shorting out bonding method for multi-stack anodic bonding and its application in wafer-level packaging

2020 ◽  
Vol 34 (32) ◽  
pp. 2050369
Author(s):  
Yifang Liu ◽  
Tingting Dai ◽  
Peiqin Xie ◽  
Lingyun Wang ◽  
Zhan Zhan ◽  
...  
Keyword(s):  
Anodic Bonding ◽  
Wafer Level ◽  
Temperature Property ◽  
Mems Packaging ◽  
Long Term Stability ◽  
Wafer Level Packaging ◽  
Voltage Division ◽  
Rc Circuit ◽  
Bonding Method

Silicon/glass anodic bonding is widely investigated during MEMS packaging of multi-stack structures. The electrical behavior of anode bonding can be described as the charging and discharging process of RC circuit. Here, we conduct the equivalent RC circuit model analysis and experimental investigation, and demonstrate that voltage division and electricity leakage are the dilemma for the conventional multi-stack anodic bonding. By using feedthrough, the feasibility and convenience of “shorting out bonding” is presented, which is exampled through the wafer-level packaging of the MEMS gyroscope. Result from the sensor’s vacuum characterization reveals that shorting out bonding for multi-stack silicon/glass structures is an effective method for wafer-level packaging due to long-term stability and low temperature property.‘

An RC network analysis of long term Ti:LiNbO/sub 3/ bias stability

1996 ◽  
Vol 14 (12) ◽  
pp. 2687-2697 ◽  
Author(s):  
S.K. Korotky ◽  
J.J. Veselka
Keyword(s):  
Network Analysis ◽  
Bias Stability

scholarly journals A Nondestructive Indirect Approach to Long-Term Wood Moisture Monitoring Based on Electrical Methods

Materials ◽  
2019 ◽  
Vol 12 (15) ◽  
pp. 2373 ◽  
Author(s):  
Slávik ◽  
Čekon ◽  
Štefaňák
Keyword(s):  
Building Structures ◽  
Electric Resistance ◽  
Digital Signals ◽  
Wood Moisture ◽  
Moisture Contents ◽  
Spruce Wood ◽  
Moisture Protection ◽  
Electrical Methods ◽  
Rc Circuit

Wood has a long tradition of use as a building material due its properties and availability. However, it is very sensitive to moisture. Wood components of building structures basically require a certain level of moisture protection, and thus moisture monitoring to ensure the serviceability of such components during their whole lifespan while integrated within buildings is relevant to this area. The aim of this study is to investigate two moisture monitoring techniques promoting moisture safety in wood-based buildings (i.e., new structures, as well as renovated and protected buildings). The study is focused on the comparison of two electrical methods that can be employed for the nondestructive moisture monitoring of wood components integrated in the structures of buildings. The main principle of the two presented methods of the moisture measurement by electric resistance is based on a simple resistor–capacitor (RC) circuit system improved with ICM7555 chip and integrator circuit using TLC71 amplifier. The RC-circuit is easier to implement thanks to the digital signals of the used chip, whilst the newly presented integration method allows faster measurement at lower moisture contents. A comparative experimental campaign utilizing spruce wood samples is conducted in this relation. Based on the results obtained, both methods can be successfully applied to wood components in buildings for moisture contents above 8%.

scholarly journals Effect of HfO2-Based Multi-Dielectrics on Electrical Properties of Amorphous In-Ga-Zn-O Thin Film Transistors

Coatings ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1381
Author(s):  
Ruozheng Wang ◽  
Qiang Wei ◽  
Jie Li ◽  
Jiao Fu ◽  
Yiwei Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Electrical Characteristics ◽  
Defect States ◽  
Electrical And Optical Properties ◽  
Bias Stress ◽  
Bias Stability ◽  
The Stability ◽  
Quality Surface

We report the fabrication of bottom gate a-IGZO TFTs based on HfO2 stacked dielectrics with decent electrical characteristics and bias stability. The microscopic, electrical, and optical properties of room temperature deposited a-IGZO film with varied oxygen content were explored. In order to suppress the bulk defects in the HfO2 thin film and hence maximize the quality, surface modification of the SiNx film was investigated so as to achieve a more uniform layer. The root mean square (RMS) roughness of SiNx/HfO2/SiNx (SHS) stacked dielectrics was only 0.66 nm, which was reduced by 35% compared with HfO2 single film (1.04 nm). The basic electrical characteristics of SHS-based a-IGZO TFT were as follows: Vth is 2.4 V, μsat is 21.1 cm2 V−1 s−1, Ion/Ioff of 3.3 × 107, Ioff is 10−11 A, and SS is 0.22 V/dec. Zr-doped HfO2 could form a more stable surface, which will decrease the bulk defect states so that the stability of device can be improved. It was found that the electrical characteristics were improved after Zr doping, with a Vth of 1.4 V, Ion/Ioff of 108, μsat of 19.5 cm2 V−1 s−1, Ioff of 10−12 A, SS of 0.18 V/dec. After positive gate bias stress of 104 s, the ΔVth was decreased from 0.43 V (without Zr doping) to 0.09 V (with Zr doping), the ΔSS was decreased from 0.19 V/dec to 0.057 V/dec, respectively, which shows a meaningful impact to realize the long-term working stability of TFT devices.

RC Circuit Analysis

2000 ◽  
pp. 217-256
Author(s):  
John Clayton Rawlins
Keyword(s):  
Circuit Analysis ◽  
Rc Circuit
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