Effect of Implementation of a Bragg Reflector in the Photonic Band Structure of the Suzuki-phase Photonic Crystal Lattice

2008 ◽  
Author(s):  
Luis Javier Martínez ◽  
Alfonso Rodríguez Alija ◽  
Pablo Aitor Postigo ◽  
Matteo Galli ◽  
J.F. Galisteo-López ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Band Structure ◽  
Crystal Lattice ◽  
Bragg Reflector ◽  
Photonic Band Structure ◽  
Photonic Band

scholarly journals Effect of implementation of a Bragg reflector in the photonic band structure of the Suzuki-phase photonic crystal lattice

2008 ◽  
Vol 16 (12) ◽  
pp. 8509 ◽  
Author(s):  
Luis Javier Martinez ◽  
Alfonso Rodriguez Alija ◽  
Pablo Aitor Postigo ◽  
J. F. Galisteo-López ◽  
Matteo Galli ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Band Structure ◽  
Crystal Lattice ◽  
Bragg Reflector ◽  
Photonic Band Structure ◽  
Photonic Band

Exciton Polaritons in One-Dimensional Metal-Semiconductor Photonic Crystals

2008 ◽  
Vol 8 (12) ◽  
pp. 6584-6588 ◽  
Author(s):  
R. Márquez-Islas ◽  
B. Flores-Desirena ◽  
F. Pérez-Rodríguez
Keyword(s):  
Photonic Crystal ◽  
Photonic Crystals ◽  
Band Structure ◽  
Dielectric Function ◽  
Low Frequency ◽  
Photonic Band Structure ◽  
One Dimensional ◽  
Exciton Polaritons ◽  
Metal Layers ◽  
Photonic Band

We investigate theoretically the coupling of exciton with light in a one-dimensional photonic crystal. The unit cell of the crystal consists of two alternating layers, namely a metallic layer and a semiconductor one. The frequency-dependent dielectric function of the metal is described by the Drude model, whereas for the semiconductor we use a nonlocal excitonic dielectric function. The polariton dispersion for s-polarized modes in the metal-semiconductor photonic crystal is compared with that for a dielectric-semiconductor photonic crystal. Because of the metal layers, a low-frequency gap appears in the photonic band structure. The presence of the semiconductor gives rise to photonic bands associated with the coupling of light with size-quantized excitón states. At frequencies above the longitudinal exciton frequency, the photonic band structure exhibits anticrossing phenomena produced by the upper exciton–polariton mode and size-quantized excitons. It is found that the anticrossing phenomena in the metal-semiconductor photonic crystal occur at higher frequencies in comparison with the dielectric-semiconductor case.

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