Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN/AlN quantum wells and quantum dots at 1.5 µm
Keyword(s):
Si Doped
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2007 ◽
Vol 38
(3)
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pp. 447-451
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Keyword(s):
2014 ◽
Vol 617
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pp. 141-144
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2009 ◽
Vol 78
(10)
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pp. 104707
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1989 ◽
Vol 70
(6)
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pp. 535-537
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