EIT-based third-harmonic generation using all-dielectric metasurfaces modulated by phase-change materials

Author(s):  
Muliang Zhu ◽  
Sajjad Abdollahramezani ◽  
Ali Adibi
2019 ◽  
Vol 44 (20) ◽  
pp. 5053 ◽  
Author(s):  
H. L. Liu ◽  
Zhang Zhibo ◽  
Shang Zhenchen ◽  
Gao Tian ◽  
Wu Xijun

2015 ◽  
Vol 27 (5) ◽  
pp. 1837-1846 ◽  
Author(s):  
Alyssa S. Haynes ◽  
Felix O. Saouma ◽  
Calford O. Otieno ◽  
Daniel J. Clark ◽  
Daniel P. Shoemaker ◽  
...  

2021 ◽  
Author(s):  
Fuyong Yue ◽  
Riccardo Piccoli ◽  
Mikhail Y. Shalaginov ◽  
Tian Gu ◽  
Kathleen Richardson ◽  
...  

ChemInform ◽  
2015 ◽  
Vol 46 (21) ◽  
pp. no-no
Author(s):  
Alyssa S. Haynes ◽  
Felix O. Saouma ◽  
Calford O. Otieno ◽  
Daniel J. Clark ◽  
Daniel P. Shoemaker ◽  
...  

2021 ◽  
Author(s):  
Muliang Zhu ◽  
Sajjad Abdollahramezani ◽  
Chentao Li ◽  
Tianren Fan ◽  
Hayk Harutyunyan ◽  
...  

2021 ◽  
Author(s):  
Fuyong Yue ◽  
Riccardo Piccoli ◽  
Mikhail Y. Shalaginov ◽  
Tian Gu ◽  
Kathleen Richardson ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3194
Author(s):  
Adrian Petris ◽  
Petronela Gheorghe ◽  
Tudor Braniste ◽  
Ion Tiginyanu

The ultrafast third-order optical nonlinearity of c-plane GaN crystal, excited by ultrashort (fs) high-repetition-rate laser pulses at 1550 nm, wavelength important for optical communications, is investigated for the first time by optical third-harmonic generation in non-phase-matching conditions. As the thermo-optic effect that can arise in the sample by cumulative thermal effects induced by high-repetition-rate laser pulses cannot be responsible for the third-harmonic generation, the ultrafast nonlinear optical effect of solely electronic origin is the only one involved in this process. The third-order nonlinear optical susceptibility of GaN crystal responsible for the third-harmonic generation process, an important indicative parameter for the potential use of this material in ultrafast photonic functionalities, is determined.


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