scholarly journals Efficient extraction of zero-phonon-line photons from single nitrogen vacancy centers in an integrated GaP-on-diamond platform

Author(s):  
Emma R. Schmidgall ◽  
Michael Gould ◽  
Shabnam Dadgostar ◽  
Fariba Hatami ◽  
Kai-Mei C. Fu
2015 ◽  
Vol 17 (12) ◽  
pp. 122003 ◽  
Author(s):  
S Johnson ◽  
P R Dolan ◽  
T Grange ◽  
A A P Trichet ◽  
G Hornecker ◽  
...  

2021 ◽  
Author(s):  
Megha Khokhar ◽  
Nitesh Singh ◽  
Rajesh V Nair

Abstract Dielectric metasurfaces with unique possibilities of manipulating light-matter interaction lead to new insights in exploring spontaneous emission control using single quantum emitters. Here, we study the stacked metasurfaces in one- (1D) and two-dimensions (2D) to enhance the emission rate of a single quantum emitter using the associated optical resonances. The 1D structures with stacked bilayers are investigated to exhibit Tamm plasmon resonance optimized at the zero phonon line (ZPL) of the negative nitrogen-vacancy (NV-) center. The 2D stacked metasurface comprising of two-slots silicon nano-disks is studied for the Kerker condition at ZPL wavelength. The far-field radiation plots for the 1D and 2D stacked metasurfaces show an increased extraction efficiency rate for the NV- center at ZPL wavelength that reciprocates the localized electric field intensity. The modified local density of optical states results in large Purcell enhancement of 3.8 times and 25 times for the single NV- center integrated with 1D and 2D stacked metasurface, respectively. These results have implications in exploring stacked metasurfaces for applications such as single photon generation and CMOS compatible light sources for on-demand chip integration.


2010 ◽  
Vol 97 (14) ◽  
pp. 141108 ◽  
Author(s):  
Janik Wolters ◽  
Andreas W. Schell ◽  
Günter Kewes ◽  
Nils Nüsse ◽  
Max Schoengen ◽  
...  

1990 ◽  
Vol 5 (11) ◽  
pp. 2502-2506 ◽  
Author(s):  
J. A. Freitas ◽  
J. E. Butler ◽  
U. Strom

The photoluminescence spectra of polycrystalline diamond films prepared by filament assisted chemical vapor deposition are dominated by a defect band with a strong zero phonon line near 1.68 eV and weak phonon replicas at lower energies. The 1.68 eV line is blucshifted from the 1.675 eV zero phonon line associated with the neutral vacancy in bulk diamond. The line shape and position of the 1.68 eV line are shown to depend on substrate material (Si, Mo, Ni). The 1.68 eV emission for Ni and Mo substrates is interpreted in terms of the stress shifted and broadened neutral vacancy emission. The broader 1.68 eV line observed for Si substrates may indicate the additional effects of Si absorption by the diamond films. Films prepared by an oxygen-acetylene flame technique exhibit two additional luminescence bands with zero phonon lines at 1.95 and 2.16 eV. These lines have been tentatively assigned to nitrogen-vacancy complexes. The temperature dependence (6 K–300 K) of the luminescence of a free-standing diamond film, which had been deposited on a molybdenum substrate, is comparable to similar observations reported for bulk diamond. We have also observed a strong dependence of the PL spectra radially across a given combustion film and associated this with details of the flame chemistry.


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