scholarly journals Active Silicon Photonic Devices and Integrated Circuits

Author(s):  
John E. Bowers
Micromachines ◽  
2020 ◽  
Vol 11 (3) ◽  
pp. 326 ◽  
Author(s):  
Sailong Wu ◽  
Xin Mu ◽  
Lirong Cheng ◽  
Simei Mao ◽  
H.Y. Fu

In the past few decades, silicon photonics has witnessed a ramp-up of investment in both research and industry. As a basic building block, silicon waveguide crossing is inevitable for dense silicon photonic integrated circuits and efficient crossing designs will greatly improve the performance of photonic devices with multiple crossings. In this paper, we focus on the state-of-the-art and perspectives on silicon waveguide crossings. It reviews several classical structures in silicon waveguide crossing design, such as shaped taper, multimode interference, subwavelength grating, holey subwavelength grating and vertical directional coupler by forward or inverse design method. In addition, we introduce some emerging research directions in crossing design including polarization-division-multiplexing and mode-division-multiplexing technologies.


Author(s):  
Hyundai Park ◽  
Brian R. Koch ◽  
Erik J. Norberg ◽  
Jonathon E. Roth ◽  
Byungchae Kim ◽  
...  

2011 ◽  
Vol 19 (27) ◽  
pp. 26936 ◽  
Author(s):  
Gyungock Kim ◽  
Jeong Woo Park ◽  
In Gyoo Kim ◽  
Sanghoon Kim ◽  
Sanggi Kim ◽  
...  

Nanophotonics ◽  
2018 ◽  
Vol 8 (2) ◽  
pp. 227-247 ◽  
Author(s):  
Chenlei Li ◽  
Dajian Liu ◽  
Daoxin Dai

AbstractMultimode silicon photonics is attracting more and more attention because the introduction of higher-order modes makes it possible to increase the channel number for data transmission in mode-division-multiplexed (MDM) systems as well as improve the flexibility of device designs. On the other hand, the design of multimode silicon photonic devices becomes very different compared with the traditional case with the fundamental mode only. Since not only the fundamental mode but also the higher-order modes are involved, one of the most important things for multimode silicon photonics is the realization of effective mode manipulation, which is not difficult, fortunately because the mode dispersion in multimode silicon optical waveguide is very strong. Great progresses have been achieved on multimode silicon photonics in the past years. In this paper, a review of the recent progresses of the representative multimode silicon photonic devices and circuits is given. The first part reviews multimode silicon photonics for MDM systems, including on-chip multichannel mode (de)multiplexers, multimode waveguide bends, multimode waveguide crossings, reconfigurable multimode silicon photonic integrated circuits, multimode chip-fiber couplers, etc. In the second part, we give a discussion about the higher-order mode-assisted silicon photonic devices, including on-chip polarization-handling devices with higher-order modes, add-drop optical filters based on multimode Bragg gratings, and some emerging applications.


2016 ◽  
Vol 6 (12) ◽  
pp. 426 ◽  
Author(s):  
Lee Carroll ◽  
Jun-Su Lee ◽  
Carmelo Scarcella ◽  
Kamil Gradkowski ◽  
Matthieu Duperron ◽  
...  

Nanophotonics ◽  
2014 ◽  
Vol 3 (4-5) ◽  
pp. 215-228 ◽  
Author(s):  
Po Dong ◽  
Young-Kai Chen ◽  
Guang-Hua Duan ◽  
David T. Neilson

AbstractSilicon photonic devices and integrated circuits have undergone rapid and significant progresses during the last decade, transitioning from research topics in universities to product development in corporations. Silicon photonics is anticipated to be a disruptive optical technology for data communications, with applications such as intra-chip interconnects, short-reach communications in datacenters and supercomputers, and long-haul optical transmissions. Bell Labs, as the research organization of Alcatel-Lucent, a network system vendor, has an optimal position to identify the full potential of silicon photonics both in the applications and in its technical merits. Additionally it has demonstrated novel and improved high-performance optical devices, and implemented multi-function photonic integrated circuits to fulfill various communication applications. In this paper, we review our silicon photonic programs and main achievements during recent years. For devices, we review high-performance single-drive push-pull silicon Mach-Zehnder modulators, hybrid silicon/III-V lasers and silicon nitride-assisted polarization rotators. For photonic circuits, we review silicon/silicon nitride integration platforms to implement wavelength-division multiplexing receivers and transmitters. In addition, we show silicon photonic circuits are well suited for dual-polarization optical coherent transmitters and receivers, geared for advanced modulation formats. We also discuss various applications in the field of communication which may benefit from implementation in silicon photonics.


2021 ◽  
pp. 2000501
Author(s):  
Jorge Parra ◽  
Irene Olivares ◽  
Antoine Brimont ◽  
Pablo Sanchis

2021 ◽  
Vol 11 (4) ◽  
pp. 1887
Author(s):  
Markus Scherrer ◽  
Noelia Vico Triviño ◽  
Svenja Mauthe ◽  
Preksha Tiwari ◽  
Heinz Schmid ◽  
...  

It is a long-standing goal to leverage silicon photonics through the combination of a low-cost advanced silicon platform with III-V-based active gain material. The monolithic integration of the III-V material is ultimately desirable for scalable integrated circuits but inherently challenging due to the large lattice and thermal mismatch with Si. Here, we briefly review different approaches to monolithic III-V integration while focusing on discussing the results achieved using an integration technique called template-assisted selective epitaxy (TASE), which provides some unique opportunities compared to existing state-of-the-art approaches. This method relies on the selective replacement of a prepatterned silicon structure with III-V material and thereby achieves the self-aligned in-plane monolithic integration of III-Vs on silicon. In our group, we have realized several embodiments of TASE for different applications; here, we will focus specifically on in-plane integrated photonic structures due to the ease with which these can be coupled to SOI waveguides and the inherent in-plane doping orientation, which is beneficial to waveguide-coupled architectures. In particular, we will discuss light emitters based on hybrid III-V/Si photonic crystal structures and high-speed InGaAs detectors, both covering the entire telecom wavelength spectral range. This opens a new path towards the realization of fully integrated, densely packed, and scalable photonic integrated circuits.


Nanophotonics ◽  
2014 ◽  
Vol 3 (4-5) ◽  
pp. 329-341 ◽  
Author(s):  
Raji Shankar ◽  
Marko Lončar

AbstractThe mid-infrared (IR) wavelength region (2–20 µm) is of great interest for a number of applications, including trace gas sensing, thermal imaging, and free-space communications. Recently, there has been significant progress in developing a mid-IR photonics platform in Si, which is highly transparent in the mid-IR, due to the ease of fabrication and CMOS compatibility provided by the Si platform. Here, we discuss our group’s recent contributions to the field of silicon-based mid-IR photonics, including photonic crystal cavities in a Si membrane platform and grating-coupled high-quality factor ring resonators in a silicon-on-sapphire (SOS) platform. Since experimental characterization of microphotonic devices is especially challenging at the mid-IR, we also review our mid-IR characterization techniques in some detail. Additionally, pre- and post-processing techniques for improving device performance, such as resist reflow, Piranha clean/HF dip cycling, and annealing are discussed.


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