Plasmonic Metal-Insulator-Metal Structures for Interaction with Erbium in Amorphous Silicon Nitride

2009 ◽  
Author(s):  
Yiyang Gong ◽  
Selçuk Yerci ◽  
Luca Dal Negro ◽  
Jelena Vučković
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Metal Insulator ◽  
Metal Structures ◽  
Amorphous Silicon Nitride ◽  
Metal Insulator Metal

scholarly journals Enhanced light emission from erbium doped silicon nitride in plasmonic metal-insulator-metal structures

2009 ◽  
Vol 17 (23) ◽  
pp. 20642 ◽  
Author(s):  
Yiyang Gong ◽  
Selçuk Yerci ◽  
Rui Li ◽  
Luca Dal Negro ◽  
Jelena Vuckovic
Keyword(s):  
Silicon Nitride ◽  
Light Emission ◽  
Metal Insulator ◽  
Metal Structures ◽  
Metal Insulator Metal ◽  
Erbium Doped ◽  
Doped Silicon

scholarly journals Hydrogen effects on the thermal conductivity of delocalized vibrational modes in amorphous silicon nitride (a−SiNx:H)

2021 ◽  
Vol 5 (3) ◽  
Author(s):  
Jeffrey L. Braun ◽  
Sean W. King ◽  
Eric R. Hoglund ◽  
Mehrdad Abbasi Gharacheh ◽  
Ethan A. Scott ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Vibrational Modes ◽  
Amorphous Silicon Nitride

scholarly journals Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 354
Author(s):  
Qianqian Liu ◽  
Xiaoxuan Chen ◽  
Hongliang Li ◽  
Yanqing Guo ◽  
Jie Song ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Chemical Vapor ◽  
Peak Position ◽  
Excitation Wavelength ◽  
Very High Frequency ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
High Frequency Plasma

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N4+ or N20 as a result of bonding configuration reconstruction.

Kinetics of silicon nitride crystallization in N+-implanted silicon

1989 ◽  
Vol 4 (2) ◽  
pp. 394-398 ◽  
Author(s):  
V. S. Kaushik ◽  
A. K. Datye ◽  
D. L. Kendall ◽  
B. Martinez-Tovar ◽  
D. S. Simons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Wafer Surface ◽  
Amorphous Silicon Nitride ◽  
Silicon Lattice ◽  
Nitrogen Ions ◽  
The Mean ◽  
Nitride Layers ◽  
Kinetics Of

Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.

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