Coherent Proximity Sensor with High Density Fiber Array

2006 ◽  
Author(s):  
Yuan Luo ◽  
Lina J. Arauz ◽  
Jose E. Castillo ◽  
Jennifer K. Barton ◽  
Raymond K. Kostuk
Keyword(s):  
High Density ◽  
Proximity Sensor ◽  
Fiber Array

OPLEAF Fiber Array for High Density Optical IC

2006 ◽  
Vol 126 (6) ◽  
pp. 255-260
Author(s):  
Tadashi Sonobe ◽  
Noriyoshi Hiroi ◽  
Mitsuru Takenaka ◽  
Yoshiaki Nakano ◽  
Hiroyuki Fujita
Keyword(s):  
High Density ◽  
Fiber Array

Elimination of Self-Contamination in High-Density Low-Loss Single-Mode Fiber Array Connectors

2004 ◽  
Vol 22 (1) ◽  
pp. 24-28 ◽  
Author(s):  
G. Nykolak ◽  
G. Wilder ◽  
L. Eskildsen ◽  
N. Patel ◽  
T. Strasser ◽  
...  
Keyword(s):  
Single Mode ◽  
Single Mode Fiber ◽  
High Density ◽  
Low Loss ◽  
Fiber Array

Optical Engineering: Elimination of Self- Contamination in High- Density, Low-Loss, Single Mode Fiber Array Connectors

2003 ◽  
Vol 14 (12) ◽  
pp. 28 ◽  
Author(s):  
G. Nykolak ◽  
G. Wilder ◽  
L. Eskildsen ◽  
N. Patel ◽  
T. Strasser ◽  
...  
Keyword(s):  
Single Mode ◽  
Single Mode Fiber ◽  
High Density ◽  
Low Loss ◽  
Fiber Array ◽  
Optical Engineering

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

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