Novel Approach for Design of Low-loss DBRs for VCSELs

2006 ◽  
Author(s):  
I. M. Safonov ◽  
I. A. Sukhoivanov ◽  
J. Kratz ◽  
S. I. Petrov ◽  
M. V. Klimenko ◽  
...  
Keyword(s):  
Low Loss ◽  
Nanoscale ◽  
2014 ◽  
Vol 6 (24) ◽  
pp. 14971-14983 ◽  
Author(s):  
Alberto Eljarrat ◽  
Lluís López-Conesa ◽  
Julian López-Vidrier ◽  
Sergi Hernández ◽  
Blas Garrido ◽  
...  

A novel approach to disentangle the electronic features corresponding to pure Si-NCs from their surrounding dielectric material.


2008 ◽  
Vol 16 (12) ◽  
pp. 8845 ◽  
Author(s):  
Shaghik Atakaramians ◽  
Shahraam Afshar V. ◽  
Bernd M. Fischer ◽  
Derek Abbott ◽  
Tanya M. Monro

2015 ◽  
Vol 11 (2) ◽  
pp. 104
Author(s):  
Vandana Shukla ◽  
O. P. Singh ◽  
G. R. Mishra ◽  
R. K. Tiwari

Reversible circuit designing is the area where researchers are focussing more and more for the generation of low loss digital system designs. Researchers are using the concept of Reversible Logic in many areas such as Nanotechnology, low loss computing, optical computing, low power CMOS design etc. Here we have proposed a novel design approach for a 2-bit binary Arithmetic Logic Unit (ALU) using optimized 8:1 multiplexer circuit with reversible logic concept [1]. This ALU circuit can perform complement, transfer, addition, subtraction, multiplication, OR, XOR, NAND functions on given values. The ALU circuit has been simulated on Modelsim tool and synthesised for Xilinx Spartan 3E with Device XC3S500E with 200 MHz frequency. This 2-bit ALU using reversible logic is useful for the designs of low power loss systems.


Author(s):  
David C. Joy ◽  
Dennis M. Maher

High-resolution images of the surface topography of solid specimens can be obtained using the low-loss technique of Wells. If the specimen is placed inside a lens of the condenser/objective type, then it has been shown that the lens itself can be used to collect and filter the low-loss electrons. Since the probeforming lenses in TEM instruments fitted with scanning attachments are of this type, low-loss imaging should be possible.High-resolution, low-loss images have been obtained in a JEOL JEM 100B fitted with a scanning attachment and a thermal, fieldemission gun. No modifications were made to the instrument, but a wedge-shaped, specimen holder was made to fit the side-entry, goniometer stage. Thus the specimen is oriented initially at a glancing angle of about 30° to the beam direction. The instrument is set up in the conventional manner for STEM operation with all the lenses, including the projector, excited.


Author(s):  
Oliver C. Wells

The low-loss electron (LLE) image in the scanning electron microscope (SEM) is useful for the study of uncoated photoresist and some other poorly conducting specimens because it is less sensitive to specimen charging than is the secondary electron (SE) image. A second advantage can arise from a significant reduction in the width of the “penetration fringe” close to a sharp edge. Although both of these problems can also be solved by operating with a beam energy of about 1 keV, the LLE image has the advantage that it permits the use of a higher beam energy and therefore (for a given SEM) a smaller beam diameter. It is an additional attraction of the LLE image that it can be obtained simultaneously with the SE image, and this gives additional information in many cases. This paper shows the reduction in penetration effects given by the use of the LLE image.


Author(s):  
C P Scott ◽  
A J Craven ◽  
C J Gilmore ◽  
A W Bowen

The normal method of background subtraction in quantitative EELS analysis involves fitting an expression of the form I=AE-r to an energy window preceding the edge of interest; E is energy loss, A and r are fitting parameters. The calculated fit is then extrapolated under the edge, allowing the required signal to be extracted. In the case where the characteristic energy loss is small (E < 100eV), the background does not approximate to this simple form. One cause of this is multiple scattering. Even if the effects of multiple scattering are removed by deconvolution, it is not clear that the background from the recovered single scattering distribution follows this simple form, and, in any case, deconvolution can introduce artefacts.The above difficulties are particularly severe in the case of Al-Li alloys, where the Li K edge at ~52eV overlaps the Al L2,3 edge at ~72eV, and sharp plasmon peaks occur at intervals of ~15eV in the low loss region. An alternative background fitting technique, based on the work of Zanchi et al, has been tested on spectra taken from pure Al films, with a view to extending the analysis to Al-Li alloys.


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