A High efficiency, Current Injection Based Quantum-Well Phase Modulator Monolithically Integrated with a Tunable Laser for Coherent Systems

2006 ◽  
Author(s):  
Matthew N. Sysak ◽  
Leif A. Johansson ◽  
James W. Raring ◽  
Mark Rodwell ◽  
Larry A. Coldren ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Efficiency ◽  
Tunable Laser ◽  
Current Injection ◽  
Phase Modulator ◽  
Coherent Systems ◽  
Monolithically Integrated

Optimised multiple quantum well phase modulator

1989 ◽  
Vol 25 (20) ◽  
pp. 1349 ◽  
Author(s):  
P.J. Bradley ◽  
G. Parry ◽  
J.S. Roberts
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Phase Modulator ◽  
Multiple Quantum

Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device

1995 ◽  
Vol 34 (11B) ◽  
pp. L1517 ◽  
Author(s):  
Isamu Akasaki ◽  
Hiroshi Amano ◽  
Shigetoshi Sota ◽  
Hiromitsu Sakai ◽  
Toshiyuki Tanaka ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Injection ◽  
Stimulated Emission

scholarly journals Experimental and Modeling Study on the High-Performance p++-GaAs/n++-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1092
Author(s):  
Yudan Gou ◽  
Jun Wang ◽  
Yang Cheng ◽  
Yintao Guo ◽  
Xiao Xiao ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
High Efficiency ◽  
Tunnel Junctions ◽  
Peak Current Density ◽  
Co Doping ◽  
Trap Assisted Tunneling ◽  
Carrier Tunneling ◽  
High Concentrations ◽  
Ingaas Quantum Well

The development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations. We investigate silicon and tellurium co-doping of InGaAs quantum well inserts in p++-GaAs/n++-GaAs tunnel junctions and report a peak current density as high as 5839 A cm−2 with a series resistance of 5.86 × 10−5 Ω cm2. In addition, we discuss how device performance is affected by the growth temperature, thickness, and V/III ratio in the InGaAs layer. A simulation model indicates that the contribution of trap-assisted tunneling enhances carrier tunneling.

InGaAlAs/InAlAs multiple quantum well phase modulator integrated with spot size conversion structure

1994 ◽  
Vol 6 (2) ◽  
pp. 208-210 ◽  
Author(s):  
N. Yoshimoto ◽  
K. Kawano ◽  
Y. Hasumi ◽  
H. Takeuchi ◽  
S. Kondo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Spot Size ◽  
Phase Modulator ◽  
Multiple Quantum
Sign in / Sign up

Export Citation Format

Share Document