Internal Quantum Efficiency Measurement in InGaN/GaN UV LEDs with Patterned Sapphire Substrate by Photoluminescence and Electroluminescence Method

2010 ◽  
Author(s):  
C. H. Wang ◽  
C. H. Chiu ◽  
C. C. Ke ◽  
H.C. Kuo ◽  
T.C. Lu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Sapphire Substrate ◽  
Internal Quantum Efficiency ◽  
Efficiency Measurement ◽  
Patterned Sapphire Substrate ◽  
Uv Leds

Internal Quantum Efficiency of InGaN/GaN Led Structures Grown on a Patterned Sapphire Substrate

2014 ◽  
Vol 57 (5) ◽  
pp. 657-661 ◽  
Author(s):  
I. A. Prudaev ◽  
I. S. Romanov ◽  
Vad. A. Novikov ◽  
А. А. Marmalyuk ◽  
V. A. Kureshov ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Sapphire Substrate ◽  
Internal Quantum Efficiency ◽  
Patterned Sapphire Substrate ◽  
Gan Led

scholarly journals Internal Quantum Efficiency of UV μLED Chips

2019 ◽  
Vol 9 (3) ◽  
pp. 450
Author(s):  
Yoshihiko Muramoto ◽  
Masahiro Kimura ◽  
Akihiro Kondo
Keyword(s):  
Quantum Efficiency ◽  
Mass Production ◽  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Luminous Efficiency ◽  
Crystal Defects ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Ultraviolet Range ◽  
Uv Leds

Micro light emitting diode (μLED) displays have been in development since 2017, aimed for application in 2020. However, when using three-color, i.e., red, blue, and green LEDs, or blue LEDs that excite red and green phosphors, many challenges arise in mass production, cost, and quality. Our group has devised an ultraviolet (UV)-excited red, green, and blue (RGB) display that excites red, green, and blue phosphors using UV-LEDs. This paper studies how the composition and crystal defects of a light-emitting layer affect the luminous efficiency of a UV μLED chip from the perspective of internal quantum efficiency (IQE). It was confirmed that the luminous efficiency improves by making the LED chips in the near ultraviolet range μ-size. The UV μLED chip emitting at 385 nm exhibited a more linear output than a 400-nm purple μLED chip.

Round Holes Pattern Design on Patterned Sapphire Substrate of GaN-Based LEDs

2013 ◽  
Vol 321-324 ◽  
pp. 474-477
Author(s):  
Xin Yu Yu ◽  
Jun Zhang ◽  
Zhe Chen ◽  
Meng Yuan Xie ◽  
Jian Hui Yu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Sapphire Substrate ◽  
External Quantum Efficiency ◽  
Light Emitting Diode ◽  
Maximum Enhancement ◽  
Pattern Design ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Simulation Results

Patterned sapphire substrate (PSS) is effective approach to improve external quantum efficiency of light emitting diode (LED) chip. The round holes pattern was studied in this paper. Simulation was used to study how external quantum efficiency changes in different parameters of the round holes for flip GaN-based LEDs fabricated round holes PSS. Through a series of comparisons on simulation results, the maximum enhancement of LED’s external quantum efficiency is 15% compared to the external quantum efficiency of non-patterned sapphire substrate (non-PSS) LED for a most effective pattern.

Sign in / Sign up

Export Citation Format

Share Document