Tunable Pulse Width, Short Pulse High Power Green Laser

2010 ◽  
Author(s):  
Pratheepan Madasamy ◽  
Lynsi Coressel ◽  
Donald R. Jander ◽  
Eric C. Honea
Keyword(s):  
High Power ◽  
Pulse Width ◽  
Short Pulse ◽  
Green Laser

A high power, short pulse-width, low pressure N2laser

1986 ◽  
Vol 19 (6) ◽  
pp. 471-473 ◽  
Author(s):  
H da Silva Reis ◽  
A DioasTavares ◽  
C A Massone ◽  
M S Z Chaghtai
Keyword(s):  
High Power ◽  
Pulse Width ◽  
Short Pulse ◽  
Low Pressure ◽  
Short Pulse Width

scholarly journals High Power and Short Pulse Width Operation of Passively Q-Switched Er:Lu2O3 Ceramic Laser at 2.7 μm

2018 ◽  
Vol 8 (5) ◽  
pp. 801 ◽  
Author(s):  
Li Wang ◽  
Haitao Huang ◽  
Deyuan Shen ◽  
Jian Zhang ◽  
Dingyuan Tang
Keyword(s):  
High Power ◽  
Pulse Width ◽  
Short Pulse ◽  
Short Pulse Width ◽  
Ceramic Laser

scholarly journals Effects of Cathode Voltage Pulse Width in High Power Impulse Magnetron Sputtering on the Deposited Chromium Thin Films

Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 542 ◽  
Author(s):  
Chin-Chiuan Kuo ◽  
Chun-Hui Lin ◽  
Yu-Tse Lin ◽  
Jing-Tang Chang
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Rate ◽  
High Power ◽  
Pulse Width ◽  
Short Pulse ◽  
Film Structure ◽  
Cathode Voltage ◽  
Working Pressure ◽  
Short Pulse Width ◽  
The Difference

Environmentally-safe high-power impulse magnetron sputtering (HiPIMS) technology was utilized to deposit chromium films. This research focused on the influences of the HiPIMS pulse widths on the microstructure of films deposited at different deposition pressures and substrate bias voltages. Under the conditions of the same average HiPIMS power and duty cycle, the deposition rate of the Cr thin film at working pressure 0.8 Pa is slightly higher than at 1.2 Pa. Also, the difference between deposition rates under two pressures decreases with the discharge pulse width. The deposition rate of the short pulse width 60 μs is lowest, but those of 200 and 360 μs are approximately the same. With no or small direct current substrate biasing, the microstructure of films coated at short pulse width is similar to the typical magnetron sputtering deposited films. Elongating the pulse width enhances the ion flux toward the substrate and changes the film structure from individual prism-like columns into tangled 3-point/4-point star columns. Substantial synchronized substrate biasing and longer pulse width changes the preferred orientation of Cr films from Cr (110) to Cr (200) and Cr (211). The films deposited at longer pulse width exhibit a higher hardness due to the reducing of intercolumn voids.

scholarly journals Effect of Voltage Pulse Width and Synchronized Substrate Bias in High-Power Impulse Magnetron Sputtering of Zirconium Films

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 7
Author(s):  
Chin-Chiuan Kuo ◽  
Chun-Hui Lin ◽  
Jing-Tang Chang ◽  
Yu-Tse Lin
Keyword(s):  
Growth Rate ◽  
Magnetron Sputtering ◽  
High Power ◽  
Pulse Width ◽  
Film Growth ◽  
Highly Charged Ions ◽  
Argon Pressure ◽  
Hexagonal Prism ◽  
Film Growth Rate ◽  
Charged Ions

The Zr film microstructure is highly influenced by the energy of the plasma species during the deposition process. The influences of the discharge pulse width, which is the key factor affecting ionization of sputtered species in the high-power impulse magnetron sputtering (HiPIMS) process, on the obtained microstructure of films is investigated in this research. The films deposited at different argon pressure and substrate biasing are compared. With keeping the same average HiPIMS power and duty cycle, the film growth rate of the Zr film decreases with increasing argon pressure and enhancing substrate biasing. In addition, the film growth rate decreases with the elongating HiPIMS pulse width. For the deposition at 1.2 Pa argon, extending the pulse width not only intensifies the ion flux toward the substrate but also increases the fraction of highly charged ions, which alter the microstructure of films from individual hexagonal prism columns into a tightly connected irregular column. Increasing film density leads to higher hardness. Sufficient synchronized negative substrate biasing and longer pulse width, which supports higher mobility of adatoms, causes the preferred orientation of hexagonal α-phase Zr films from (0 0 0 2) to (1 0 1¯ 1). Unlike the deposition at 1.2 Pa, highly charged ions are also found during the short HiPIMS pulse width at 0.8 Pa argon.

A fundamental mode miniature acousto-optically Q-switched Nd:YVO4laser with short pulse width at high repetition rates

2008 ◽  
Vol 5 (4) ◽  
pp. 286-290 ◽  
Author(s):  
Y Wang ◽  
L Huang ◽  
H Zhang ◽  
X Yan ◽  
Q Liu ◽  
...  
Keyword(s):  
Fundamental Mode ◽  
Pulse Width ◽  
Short Pulse ◽  
High Repetition ◽  
Short Pulse Width

All-fiber high-power monolithic femtosecond laser at 1.59 µm with 63-fs pulse width

2017 ◽  
Vol 124 (1) ◽  
Author(s):  
M. J. Hekmat ◽  
M. Omoomi ◽  
A. Gholami ◽  
A. Bagheri Yazdabadi ◽  
M. Abdollahi ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
High Power ◽  
Pulse Width

LD side-pumped intracavity frequency-doubled high power Nd: YAG green laser based on acousto-optic Q-switch

2006 ◽  
Vol 2 (6) ◽  
pp. 416-418
Author(s):  
Feng-chuan Zhang ◽  
Xiu-wei Fan ◽  
Lin Xue ◽  
Hong-liang Chai ◽  
Jing-liang He
Keyword(s):  
High Power ◽  
Green Laser ◽  
Intracavity Frequency
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