scholarly journals Temperature-dependent optical properties of lead selenide quantum dot polymer nanocomposites

2017 ◽  
Vol 56 (7) ◽  
pp. 1982
Author(s):  
Dennis L. Waldron ◽  
Rebeckah Burke ◽  
Amanda Preske ◽  
Todd D. Krauss ◽  
Joseph M. Zawodny ◽  
...  
2015 ◽  
Vol 26 (7) ◽  
pp. 075705 ◽  
Author(s):  
Dennis L Waldron ◽  
Amanda Preske ◽  
Joseph M Zawodny ◽  
Todd D Krauss ◽  
Mool C Gupta

2015 ◽  
Vol 119 (30) ◽  
pp. 17480-17486 ◽  
Author(s):  
Hong-Hua Fang ◽  
Daniel M. Balazs ◽  
Loredana Protesescu ◽  
Maksym V. Kovalenko ◽  
Maria Antonietta Loi

ACS Nano ◽  
2020 ◽  
Vol 14 (6) ◽  
pp. 7161-7169 ◽  
Author(s):  
Iñigo Ramiro ◽  
Biswajit Kundu ◽  
Mariona Dalmases ◽  
Onur Özdemir ◽  
María Pedrosa ◽  
...  

2014 ◽  
Vol 6 (2) ◽  
pp. 1178-1190
Author(s):  
A. JOHN PETER ◽  
Ada Vinolin

Simultaneous effects of magnetic field, pressure and temperature on the exciton binding energies are found in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot. Numerical calculations are carried out taking into consideration of spatial confinement effect. The cylindrical system is taken in the present problem with the strain effects. The electronic properties and the optical properties are found with the combined effects of magnetic field strength, hydrostatic pressure and temperature values. The exciton binding energies and the nonlinear optical properties are carried out taking into consideration of geometrical confinement and the external perturbations.Compact density approach is employed to obtain the nonlinear optical properties. The optical rectification coefficient is obtained with the photon energy in the presence of pressure, temperature and external magnetic field strength. Pressure and temperature dependence on nonlinear optical susceptibilities of generation of second and third order harmonics as a function of incident photon energy are brought out in the influence of magnetic field strength. The result shows that the electronic and nonlinear optical properties are significantly modified by the applications of external perturbations in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot.


Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1035
Author(s):  
Ivan Shtepliuk ◽  
Volodymyr Khranovskyy ◽  
Arsenii Ievtushenko ◽  
Rositsa Yakimova

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.


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