Carrier squeezing interferometry with π/4 phase shift: phase extraction in the presence of multi-beam interference

2016 ◽  
Vol 55 (8) ◽  
pp. 1920 ◽  
Author(s):  
Jinlong Cheng ◽  
Zhishan Gao ◽  
Qun Yuan ◽  
Kailiang Wang ◽  
Liping Xu
Keyword(s):  
2017 ◽  
Vol 402 ◽  
pp. 489-497 ◽  
Author(s):  
Jinlong Cheng ◽  
Qun Yuan ◽  
Yimeng Dou ◽  
Yanxia Yao ◽  
Jialing Huang ◽  
...  

2020 ◽  
Author(s):  
Songsong Zhang ◽  
Haisong Huang ◽  
Qiaoqiao Xiong

Abstract Variable frequency phase shift interferometry is widely applied in optical precision measurement, with the accuracy of phase extraction’s direct impact on that of phase shift interferometry. In the variable-frequency phase-shift interferometry, the commonly used phase-shifting devices are prone to phase shift errors, because the ordinary equal-step phase extraction algorithm, which can be merely used to measure simple and smooth surface, influences the accuracy of phase extraction resulting in measuring error, and causes inefficiency led by the long time the iterative process lasts for when applied in complex stepped surfaces measurement. As a sort of step-by-step phase-shifting phase extraction algorithm based on selective sampling is used to measure the step surface contour, the interference image is firstly sampled at equal intervals to reduce the iterative calculation, and in view of the fact that the phase calibration of the test system is not required in this algorithm, the measured phase is given by using the alternating iterative method despite the unknown phase and unknown phase shift amount. The phase extraction accuracy and iteration time among traditional iterative algorithm, four-step phase shift algorithm and the variable phase shift phase interpolation algorithm based on selective sampling are compared in the simulation and experiment. It is shown that the variable frequency phase shifting interference phase extraction algorithm based on selective sampling has shorter operation time, less error and higher accuracy than traditional iterative algorithm in measuring complex step surface.


Author(s):  
Kenneth H. Downing ◽  
Benjamin M. Siegel

Under the “weak phase object” approximation, the component of the electron wave scattered by an object is phase shifted by π/2 with respect to the unscattered component. This phase shift has been confirmed for thin carbon films by many experiments dealing with image contrast and the contrast transfer theory. There is also an additional phase shift which is a function of the atomic number of the scattering atom. This shift is negligible for light atoms such as carbon, but becomes significant for heavy atoms as used for stains for biological specimens. The light elements are imaged as phase objects, while those atoms scattering with a larger phase shift may be imaged as amplitude objects. There is a great deal of interest in determining the complete object wave, i.e., both the phase and amplitude components of the electron wave leaving the object.


Author(s):  
J. M. Oblak ◽  
B. H. Kear

The “weak-beam” and systematic many-beam techniques are the currently available methods for resolution of closely spaced dislocations or other inhomogeneities imaged through strain contrast. The former is a dark field technique and image intensities are usually very weak. The latter is a bright field technique, but generally use of a high voltage instrument is required. In what follows a bright field method for obtaining enhanced resolution of partial dislocations at 100 KV accelerating potential will be described.A brief discussion of an application will first be given. A study of intermediate temperature creep processes in commercial nickel-base alloys strengthened by the Ll2 Ni3 Al γ precipitate has suggested that partial dislocations such as those labelled 1 and 2 in Fig. 1(a) are in reality composed of two closely spaced a/6 <112> Shockley partials. Stacking fault contrast, when present, tends to obscure resolution of the partials; thus, conditions for resolution must be chosen such that the phase shift at the fault is 0 or a multiple of 2π.


Author(s):  
N. Osakabe ◽  
J. Endo ◽  
T. Matsuda ◽  
A. Tonomura

Progress in microscopy such as STM and TEM-TED has revealed surface structures in atomic dimension. REM has been used for the observation of surface dynamical process and surface morphology. Recently developed reflection electron holography, which employes REM optics to measure the phase shift of reflected electron, has been proved to be effective for the observation of surface morphology in high vertical resolution ≃ 0.01 Å.The key to the high sensitivity of the method is best shown by comparing the phase shift generation by surface topography with that in transmission mode. Difference in refractive index between vacuum and material Vo/2E≃10-4 owes the phase shift in transmission mode as shownn Fig. 1( a). While geometrical path difference is created in reflection mode( Fig. 1(b) ), which is measured interferometrically using high energy electron beam of wavelength ≃0.01 Å. Together with the phase amplification technique , the vertivcal resolution is expected to be ≤0.01 Å in an ideal case.


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