Near-infrared photonic band structure in a semiconductor metamaterial photonic crystal

2014 ◽  
Vol 53 (31) ◽  
pp. 7285 ◽  
Author(s):  
Meng-Ru Wu ◽  
Chien-Jang Wu ◽  
Shoou-Jinn Chang
2008 ◽  
Vol 16 (12) ◽  
pp. 8509 ◽  
Author(s):  
Luis Javier Martinez ◽  
Alfonso Rodriguez Alija ◽  
Pablo Aitor Postigo ◽  
J. F. Galisteo-López ◽  
Matteo Galli ◽  
...  

1994 ◽  
Vol 33 (Part 2, No. 10B) ◽  
pp. L1463-L1465 ◽  
Author(s):  
Kuon Inoue ◽  
Mitsuo Wada ◽  
Kazuaki Sakoda ◽  
Akio Yamanaka ◽  
Masaki Hayashi ◽  
...  

1996 ◽  
Vol 431 ◽  
Author(s):  
A. Rosenberg ◽  
R. J. Tonucci ◽  
H.-B. Lin

AbstractWe demonstrate that nanochannel glass (NCG) materials are ideal for investigating twodimensional (2D) photonic band-structure effects. The NCG materials we have studied consist of triangular arrays of glass cylinders embedded in a glass matrix, having center-tocenter nearest-neighbor separations from 0.54 to 1.08 μm. The indices of refraction of the two glasses differ by less than 0.02 in the relevant spectral region. Narrow attenuation features occur whenever the dispersion relation for light propagating within such a periodic dielectric structure crosses a Brillouin zone boundary. The attenuations corresponding to the first Brillouin zone appear in the near-infrared (IR), at wavelengths between 1 and 3 μm, in good agreement with calculations.


2008 ◽  
Vol 8 (12) ◽  
pp. 6584-6588 ◽  
Author(s):  
R. Márquez-Islas ◽  
B. Flores-Desirena ◽  
F. Pérez-Rodríguez

We investigate theoretically the coupling of exciton with light in a one-dimensional photonic crystal. The unit cell of the crystal consists of two alternating layers, namely a metallic layer and a semiconductor one. The frequency-dependent dielectric function of the metal is described by the Drude model, whereas for the semiconductor we use a nonlocal excitonic dielectric function. The polariton dispersion for s-polarized modes in the metal-semiconductor photonic crystal is compared with that for a dielectric-semiconductor photonic crystal. Because of the metal layers, a low-frequency gap appears in the photonic band structure. The presence of the semiconductor gives rise to photonic bands associated with the coupling of light with size-quantized excitón states. At frequencies above the longitudinal exciton frequency, the photonic band structure exhibits anticrossing phenomena produced by the upper exciton–polariton mode and size-quantized excitons. It is found that the anticrossing phenomena in the metal-semiconductor photonic crystal occur at higher frequencies in comparison with the dielectric-semiconductor case.


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