High-energy nanosecond parametric source at 27  µm

2021 ◽  
Vol 60 (13) ◽  
pp. 3585
Author(s):  
X. Xiao ◽  
J. A. Nees ◽  
I. Jovanovic
Keyword(s):  
High Energy ◽  
Parametric Source

Atmospheric CO2 sensing by DIAL using a high energy, high purity and high stability parametric source

2018 ◽  
Author(s):  
Myriam Raybaut ◽  
Erwan Cadiou ◽  
Jean-Baptiste Dherbecourt ◽  
Jean-Michel Melkonian ◽  
Antoine Godard ◽  
...  
Keyword(s):  
High Purity ◽  
High Stability ◽  
High Energy ◽  
Atmospheric Co2 ◽  
Parametric Source

scholarly journals High energy optical parametric source for multi-wavelength CO2 dial

2018 ◽  
Author(s):  
Jessica Barrientos-Barria ◽  
Jean-Baptiste Dherbecourt ◽  
Antoine Godard ◽  
Jean-Michel Melkonian ◽  
Myriam Raybaut ◽  
...  
Keyword(s):  
High Energy ◽  
Optical Parametric ◽  
Multi Wavelength ◽  
Parametric Source

Characterization of a high-energy self-phase-stabilized near-infrared parametric source

2008 ◽  
Vol 25 (7) ◽  
pp. B112 ◽  
Author(s):  
C. Vozzi ◽  
C. Manzoni ◽  
F. Calegari ◽  
E. Benedetti ◽  
G. Sansone ◽  
...  
Keyword(s):  
Near Infrared ◽  
High Energy ◽  
Parametric Source

High-energy single-longitudinal mode nearly diffraction-limited optical parametric source with 3 MHz frequency stability for CO_2 DIAL

2009 ◽  
Vol 34 (13) ◽  
pp. 2069 ◽  
Author(s):  
Myriam Raybaut ◽  
Thomas Schmid ◽  
Antoine Godard ◽  
Ajmal K. Mohamed ◽  
Michel Lefebvre ◽  
...  
Keyword(s):  
Longitudinal Mode ◽  
High Energy ◽  
Frequency Stability ◽  
Single Longitudinal Mode ◽  
Optical Parametric ◽  
Parametric Source

High Energy, Few-Cycle Parametric Source Tunable in the 5–11 µm Window Driven by an Yb Bulk CPA System

2018 ◽  
Author(s):  
Giedre Marija Archipovaite ◽  
Guangyu Fan ◽  
Pavel Malevich ◽  
Tan Lihao ◽  
Stéphane Petit ◽  
...  
Keyword(s):  
High Energy ◽  
Parametric Source

The E-ring: interactions with plasma and implications for its evolution

1984 ◽  
Vol 75 ◽  
pp. 599-602
Author(s):  
T.V. Johnson ◽  
G.E. Morfill ◽  
E. Grun
Keyword(s):  
Time Scale ◽  
Particle Density ◽  
High Energy ◽  
Particle Removal ◽  
Density Region ◽  
Drag Forces ◽  
Orbit Evolution ◽  
History Of ◽  
Ring Particle ◽  
Ring Material

A number of lines of evidence suggest that the particles making up the E-ring are small, on the order of a few microns or less in size (Terrile and Tokunaga, 1980, BAAS; Pang et al., 1982 Saturn meeting; Tucson, AZ). This suggests that a variety of electromagnetic and plasma affects may be important in considering the history of such particles. We have shown (Morfill et al., 1982, J. Geophys. Res., in press) that plasma drags forces from the corotating plasma will rapidly evolve E-ring particle orbits to increasing distance from Saturn until a point is reached where radiation drag forces acting to decrease orbital radius balance this outward acceleration. This occurs at approximately Rhea's orbit, although the exact value is subject to many uncertainties. The time scale for plasma drag to move particles from Enceladus' orbit to the outer E-ring is ~104yr. A variety of effects also act to remove particles, primarily sputtering by both high energy charged particles (Cheng et al., 1982, J. Geophys. Res., in press) and corotating plasma (Morfill et al., 1982). The time scale for sputtering away one micron particles is also short, 102 - 10 yrs. Thus the detailed particle density profile in the E-ring is set by a competition between orbit evolution and particle removal. The high density region near Enceladus' orbit may result from the sputtering yeild of corotating ions being less than unity at this radius (e.g. Eviatar et al., 1982, Saturn meeting). In any case, an active source of E-ring material is required if the feature is not very ephemeral - Enceladus itself, with its geologically recent surface, appears still to be the best candidate for the ultimate source of E-ring material.

Analysis of electron-diffraction intensity profiles using a photodiode-array detection system

1983 ◽  
Vol 41 ◽  
pp. 322-323
Author(s):  
J. B. Warren
Keyword(s):  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Detection System ◽  
High Energy ◽  
Photographic Emulsion ◽  
Diffraction Intensity ◽  
Silicon Photodiode ◽  
Photodiode Array Detection ◽  
Analog To Digital ◽  
Photodiode Array

Electron diffraction intensity profiles have been used extensively in studies of polycrystalline and amorphous thin films. In previous work, diffraction intensity profiles were quantitized either by mechanically scanning the photographic emulsion with a densitometer or by using deflection coils to scan the diffraction pattern over a stationary detector. Such methods tend to be slow, and the intensities must still be converted from analog to digital form for quantitative analysis. The Instrumentation Division at Brookhaven has designed and constructed a electron diffractometer, based on a silicon photodiode array, that overcomes these disadvantages. The instrument is compact (Fig. 1), can be used with any unmodified electron microscope, and acquires the data in a form immediately accessible by microcomputer.Major components include a RETICON 1024 element photodiode array for the de tector, an Analog Devices MAS-1202 analog digital converter and a Digital Equipment LSI 11/2 microcomputer. The photodiode array cannot detect high energy electrons without damage so an f/1.4 lens is used to focus the phosphor screen image of the diffraction pattern on to the photodiode array.

Observation of Superlattice Dislocations on Cube Planes in Ni3Al

1973 ◽  
Vol 31 ◽  
pp. 174-175 ◽  
Author(s):  
J. M. Oblak ◽  
W. H. Rand
Keyword(s):  
Nearest Neighbor ◽  
Antiphase Boundary ◽  
Nearest Neighbors ◽  
High Energy ◽  
Cross Slip ◽  
Octahedral Plane ◽  
Trapping Mechanism ◽  
Slip Traces

The energy of an a/2 <110> shear antiphase. boundary in the Ll2 expected to be at a minimum on {100} cube planes because here strue ture is there is no violation of nearest-neighbor order. The latter however does involve the disruption of second nearest neighbors. It has been suggested that cross slip of paired a/2 <110> dislocations from octahedral onto cube planes is an important dislocation trapping mechanism in Ni3Al; furthermore, slip traces consistent with cube slip are observed above 920°K.Due to the high energy of the {111} antiphase boundary (> 200 mJ/m2), paired a/2 <110> dislocations are tightly constricted on the octahedral plane and cannot be individually resolved.

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

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