Tunable bandpass imaging filter based on resonant tunneling through a ball lens assembly

2020 ◽  
Vol 59 (23) ◽  
pp. 7037
Author(s):  
T. R. Harrison ◽  
K. G. Scheuer ◽  
R. G. DeCorby
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.


Author(s):  
G.Y. Fan ◽  
Bruce Mrosko ◽  
Mark H. Ellisman

A lens coupled CCD camera showing single electron sensitivity has been built for TEM applications. The design is illustrated in Fig. 1. The bottom flange of a JEM-4000EX microscope is replaced by a special flange which carries a large rectangular leaded glass window, 22 mm thick. A 20 μm thick layer of red phosphor is coated on the window, and the entire window is sputter-coated with a thin layer of Au/Pt. A two-lens relay system is used to provide efficient coupling between the image on the phosphor scintillator and the CCD imager. An f1.0 lens (Goerz optical) with front focal length 71.6 mm is used as the collector. A mirror prism, of the Amici type, is used to "bend" the optical path by 90° to prevent X-rays which may penetrate the leaded glass from hitting the CCD detector. Images may be relayed directly to the camera (1:1) or demagnified by a factor of up to 3:1 by moving the lens assembly.


1977 ◽  
Vol 38 (11) ◽  
pp. 1443-1448 ◽  
Author(s):  
G. Sarrabayrouse ◽  
J. Buxo ◽  
D. Esteve

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-585-C5-588 ◽  
Author(s):  
R. E. NAHORY ◽  
N. TABATABAIE

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.


2012 ◽  
Vol E95.C (5) ◽  
pp. 871-878
Author(s):  
Masanari FUJITA ◽  
Mitsufumi SAITO ◽  
Michihiko SUHARA

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