Optimizing an LED array for an infrared illumination source using the near field for venous pattern detection

Marciano Vargas-Treviño; Jaime Gutierrez-Gutiérrez; J. M. Rodríguez-Lelis; Edmundo López Apreza

doi:10.1364/ao.381815

Optimizing an LED array for an infrared illumination source using the near field for venous pattern detection

Applied Optics ◽

10.1364/ao.381815 ◽

2020 ◽

Vol 59 (9) ◽

pp. 2858

Author(s):

Marciano Vargas-Treviño ◽

Jaime Gutierrez-Gutiérrez ◽

J. M. Rodríguez-Lelis ◽

Edmundo López Apreza

Keyword(s):

Near Field ◽

Pattern Detection ◽

Led Array ◽

Venous Pattern ◽

Illumination Source

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InGaN/GaN nanoLED Arrays as a Novel Illumination Source for Biomedical Imaging and Sensing Applications

Proceedings ◽

10.3390/proceedings2130892 ◽

2018 ◽

Vol 2 (13) ◽

pp. 892 ◽

Cited By ~ 3

Author(s):

Jan Gülink ◽

Steffen Bornemann ◽

Hendrik Spende ◽

Matthias Auf der Maur ◽

Aldo Di Carlo ◽

...

Keyword(s):

Biomedical Imaging ◽

Light Emission ◽

Light Emitting Diode ◽

Light Emitting ◽

Sensing Applications ◽

Device Processing ◽

Led Array ◽

Line Contacts ◽

Processing Optimization ◽

Illumination Source

Guidelines for the fabrication of nanoscale light-emitting diode arrays (i.e., nanoLED arrays) based on patterned gallium nitride (GaN) with very small dimensions and pitches have been derived in this work. Several challenges during top-down LED array processing have been tackled involving hybrid etching and polymer-based planarization to yield completely insulated highaspect-ratio LED fin structures and support the creation of p-GaN crossing line contacts, respectively. Furthermore, simulations of the light emission patterns were also performed providing hints for enhancing the device designs. As a result, regardless of the required device processing optimization, the developed nanoLED arrays are expected to offer high potential as novel illumination sources in biomedical imaging and sensing applications (e.g., mini compact microscopes and wearable biological/chemical nanoparticle counters)

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Individually Switchable InGaN/GaN Nano-LED Arrays as Highly Resolved Illumination Engines

Electronics ◽

10.3390/electronics10151829 ◽

2021 ◽

Vol 10 (15) ◽

pp. 1829

Author(s):

Katarzyna Kluczyk-Korch ◽

Sergio Moreno ◽

Joan Canals ◽

Angel Diéguez ◽

Jan Gülink ◽

...

Keyword(s):

Near Field ◽

Spot Size ◽

Contact Lines ◽

Resolution Limit ◽

Light Emitting ◽

Led Array ◽

Display Technology ◽

Materials Used ◽

Difference Time ◽

Led Arrays

GaN-based light emitting diodes (LEDs) have been shown to effectively operate down to nanoscale dimensions, which allows further downscaling the chip-based LED display technology from micro- to nanoscale. This brings up the question of what resolution limit of the illumination pattern can be obtained. We show two different approaches to achieve individually switchable nano-LED arrays. We evaluated both designs in terms of near-field spot size and optical crosstalk between neighboring pixels by using finite difference time domain (FDTD) simulations. The numerical results were compared with the performance data from a fabricated nano-LED array. The outcome underlines the influence of geometry of the LED array and materials used in contact lines on the final illumination spot size and shape.

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Scanning near-field infrared microscope with a free electron laser illumination source

10.1117/12.256258 ◽

1996 ◽

Cited By ~ 14

Author(s):

Mi K. Hong ◽

Shyamsunder Erramilli ◽

Philip Huie ◽

Gregory E. James ◽

Andrew G. Jeung

Keyword(s):

Free Electron ◽

Free Electron Laser ◽

Near Field ◽

Laser Illumination ◽

Infrared Microscope ◽

Illumination Source

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Near-field scanning optical microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100144644 ◽

1986 ◽

Vol 44 ◽

pp. 642-643

Author(s):

E. Betzig ◽

A. Harootunian ◽

M. Isaacson ◽

A. Lewis

Keyword(s):

Near Field ◽

Optical Microscope ◽

Visible Radiation ◽

Field Methods ◽

Optical Elements ◽

Optical Region ◽

Order Of Magnitude ◽

Nondestructive Imaging ◽

Scanning Optical Microscopy ◽

Near Field Scanning

In general, conventional methods of optical imaging are limited in spatial resolution by either the wavelength of the radiation used or by the aberrations of the optical elements. This is true whether one uses a scanning probe or a fixed beam method. The reason for the wavelength limit of resolution is due to the far field methods of producing or detecting the radiation. If one resorts to restricting our probes to the near field optical region, then the possibility exists of obtaining spatial resolutions more than an order of magnitude smaller than the optical wavelength of the radiation used. In this paper, we will describe the principles underlying such "near field" imaging and present some preliminary results from a near field scanning optical microscope (NS0M) that uses visible radiation and is capable of resolutions comparable to an SEM. The advantage of such a technique is the possibility of completely nondestructive imaging in air at spatial resolutions of about 50nm.

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