Mixed films of TiO_2–SiO_2 deposited by double electron-beam coevaporation

1996 ◽  
Vol 35 (1) ◽  
pp. 90 ◽  
Author(s):  
Jyh-Shin Chen ◽  
Shiuh Chao ◽  
Jiann-Shiun Kao ◽  
Huan Niu ◽  
Chih-Hsin Chen
Keyword(s):  
Electron Beam ◽  
Double Electron ◽  
Mixed Films

Numerical research on a 4 MW 170 GHz coaxial gyrotron with a double electron beam

2019 ◽  
Vol 26 (1) ◽  
pp. 013110 ◽  
Author(s):  
Shenyong Hou ◽  
Shen Yu ◽  
Hongfu Li
Keyword(s):  
Electron Beam ◽  
Double Electron ◽  
Numerical Research ◽  
Coaxial Gyrotron

Application of statistical filtering technique to single and double electron beam textured surfaces

2003 ◽  
Vol 43 (11) ◽  
pp. 1151-1156 ◽  
Author(s):  
Alessandro Porrino ◽  
Franco Sacerdotti ◽  
Michel Vermeulen ◽  
Clive Butler
Keyword(s):  
Electron Beam ◽  
Textured Surfaces ◽  
Double Electron ◽  
Filtering Technique

Josephson SNS microbridges fabricated by double electron beam lithography

1989 ◽  
Vol 9 (1-4) ◽  
pp. 385-388
Author(s):  
Yu.P. Baryshev ◽  
A.A. Dmitriev ◽  
A.D. Krivospitsky ◽  
V.F. Lukichev ◽  
A.A. Orlikovsky ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Double Electron

Development of a new class of coatings by double electron-beam surfacing

2011 ◽  
Vol 2 (5) ◽  
pp. 531-539 ◽  
Author(s):  
I. M. Poletika ◽  
Yu. F. Ivanov ◽  
M. G. Golkovskii ◽  
T. A. Krylova ◽  
A. D. Teresov ◽  
...  
Keyword(s):  
Electron Beam ◽  
New Class ◽  
Double Electron

UFG Microstructure Processing by ECAP from Double Electron-Beam Melted Rare Metal

2008 ◽  
Vol 584-586 ◽  
pp. 349-354 ◽  
Author(s):  
Lembit A. Kommel
Keyword(s):  
Electron Beam ◽  
Shear Bands ◽  
Rare Metal ◽  
Vacuum Furnace ◽  
Angular Pressing ◽  
Fine Grain ◽  
Grain Structures ◽  
Double Electron ◽  
First Pass ◽  
Cyclic Straining

High purity (99.99, wt %) niobium ingots were received by double electron beam melting technology. The specimens of pure metals with cast microstructure were processed using cold equal-channel angular pressing (ECAP) followed by a heat treatment at around 1080 °C in vacuum furnace for 2 h. Shear bands and microstructure evolution was studied in shear region at first pass and at next passes of ECAP. Microstructure processing characterization was performed using light optical and field emission scanning electron microscopy. Accompanied to microstructure the changes of mechanical properties were determined by micro- and universal hardness testing. The shear bands forming, evolution of large crystals to elongated laminar and dislocation fine-grain structures during processing was characterized and discussed in view of metal hardening-softening and viscoplastic behavior under subsequent hard cyclic straining.

Techniques for Transmission Electron Microscopy of Fiber-Matrix Interfaces in Aluminum Alloy-Boron Composites by Ion Erosio

1971 ◽  
Vol 29 ◽  
pp. 204-205
Author(s):  
G. G. Shaw
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Aluminum Alloy ◽  
Electron Beam ◽  
Pure Aluminum ◽  
Ion Milling ◽  
Transmission Electron ◽  
Fiber Matrix ◽  
Ion Erosion ◽  
Row Of Fibers

The morphology and composition of the fiber-matrix interface can best be studied by transmission electron microscopy and electron diffraction. For some composites satisfactory samples can be prepared by electropolishing. For others such as aluminum alloy-boron composites ion erosion is necessary.When one wishes to examine a specimen with the electron beam perpendicular to the fiber, preparation is as follows: A 1/8 in. disk is cut from the sample with a cylindrical tool by spark machining. Thin slices, 5 mils thick, containing one row of fibers, are then, spark-machined from the disk. After spark machining, the slice is carefully polished with diamond paste until the row of fibers is exposed on each side, as shown in Figure 1.In the case where examination is desired with the electron beam parallel to the fiber, preparation is as follows: Experimental composites are usually 50 mils or less in thickness so an auxiliary holder is necessary during ion milling and for easy transfer to the electron microscope. This holder is pure aluminum sheet, 3 mils thick.

Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

1982 ◽  
Vol 40 ◽  
pp. 78-79
Author(s):  
Kenneth H. Downing ◽  
Robert M. Glaeser
Keyword(s):  
Electron Beam ◽  
Fatty Acid ◽  
Inelastic Scattering ◽  
Temperature Dependence ◽  
Structural Damage ◽  
Direct Result ◽  
Second Step ◽  
Strong Temperature Dependence ◽  
Electron Dose ◽  
Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

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