Planar fabrication process of a high-coupling-efficiency interface between optical waveguides of large index difference

1995 ◽  
Vol 34 (24) ◽  
pp. 5366 ◽  
Author(s):  
Tzu J. Su ◽  
Chin C. Lee
Keyword(s):  
Optical Waveguides ◽  
Coupling Efficiency ◽  
Fabrication Process ◽  
Large Index ◽  
Planar Fabrication

scholarly journals Fabrication of Graphene Nanomesh FET Terahertz Detector

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 641
Author(s):  
Yuan Zhai ◽  
Yi Xiang ◽  
Weiqing Yuan ◽  
Gang Chen ◽  
Jinliang Shi ◽  
...  
Keyword(s):  
Room Temperature ◽  
Energy Gap ◽  
Coupling Efficiency ◽  
High Sensitivity ◽  
Fabrication Process ◽  
Monolayer Graphene ◽  
Terahertz Waves ◽  
Wet Process ◽  
Graphene Nanomesh ◽  
Thz Detector

High sensitivity detection of terahertz waves can be achieved with a graphene nanomesh as grating to improve the coupling efficiency of the incident terahertz waves and using a graphene nanostructure energy gap to enhance the excitation of plasmon. Herein, the fabrication process of the FET THz detector based on the rectangular GNM (r-GNM) is designed, and the THz detector is developed, including the CVD growth and the wet-process transfer of high quality monolayer graphene films, preparation of r-GNM by electron-beam lithography and oxygen plasma etching, and the fabrication of the gate electrodes on the Si3N4 dielectric layer. The problem that the conductive metal is easy to peel off during the fabrication process of the GNM THz device is mainly discussed. The photoelectric performance of the detector was tested at room temperature. The experimental results show that the sensitivity of the detector is 2.5 A/W (@ 3 THz) at room temperature.

He+ Implanted Stripe Optical Waveguides in LiNbo3

1988 ◽  
Vol 126 ◽  
Author(s):  
B. L. Weiss ◽  
G. T. Reed
Keyword(s):  
Optical Waveguides ◽  
Fabrication Process ◽  
Propagation Losses ◽  
Te And Tm Modes

ABSTRACTIn this paper the fabrication process and characteristics of waveguides produced by He+ implantation in Y-cut X- and Z-propagating LiNbO3 are presented It is shown that low propagation losses, down to 1dB cm−1 at λ = 633μm can be obtained for TM modes only in Y-cut X-propagation samples whilst Y-cut Z propagating samples support both TE and TM modes with relatively low losses.

Fabrication and Characterisation of Reverse Proton Exchange Optical Waveguides in Neodymium Doped Lithium Niobate Crystals

2005 ◽  
Vol 480-481 ◽  
pp. 429-436
Author(s):  
M. Domenech ◽  
G. Lifante ◽  
F. Cussó ◽  
A. Parisi ◽  
A.C. Cino ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Optical Waveguides ◽  
Spectroscopic Properties ◽  
Proton Exchange ◽  
Fabrication Process ◽  
The Other ◽  
Ion Plating ◽  
Other Hand ◽  
Channel Waveguides ◽  
Lithium Niobate Crystals

In this work, the complete fabrication process which combines Proton Exchange (PE) and Reverse Proton Exchange (RPE) in Neodymium doped LiNbO3 channel waveguides is reported. To produce the PE-RPE channel waveguides the fabrication of dielectric SiO2 masks had to be implemented. For this propose, we adopted a technique based on the Ion Plating Plasma Assisted Deposition of SiO2 followed by the standard ultraviolet photolithographic patterning. On the other hand, we determined the main optical and spectroscopic properties of Nd3+ ions in the channel waveguides including the study of the lifetime as function as the polarisation.

Process Modeling, Optimization and Characterization of Silicon Optical Waveguides by Anisotropic Wet Etching

2011 ◽  
Vol 403-408 ◽  
pp. 4295-4299
Author(s):  
H. Hazura ◽  
A.R. Hanim ◽  
B. Mardiana ◽  
Sahbudin Shaari ◽  
P.S. Menon
Keyword(s):  
Optical Waveguide ◽  
Optical Waveguides ◽  
Photonic Devices ◽  
Wet Etching ◽  
Fabrication Process ◽  
Etching Time ◽  
Optical Modulators ◽  
Silicon Waveguide ◽  
Simulation And Experiment ◽  
Silicon Based

We present a detailed fabrication process of silicon optical waveguide with a depth of 4μm via simulation and experiment. An anisotropic wet etching using Potassium Hydroxide (KOH) solutions was selected to study the influence of major fabrication parameters such as etch rate, oxidation time and development time to the fabrication performance. The fabrication of the silicon waveguide with the orientation of was modeled using ATHENA from 2D Silvaco software and was later compared with the actual fabricated device. Etching time of 4 minutes was required to etch the Si to the depth of 4μm to obtain a perfectly trapeizoidal optical waveguide structure. Our results show that the simulation model is trustworthy to predict the performance of the practical anisotropic wet etching fabrication process. The silicon-based waveguide components are targeted to be employed in realizing future photonic devices such as optical modulators.

scholarly journals Simulating the effects of refractive index difference on the coupling efficiency of periodically segmented waveguide mode converter

2021 ◽  
Vol 51 (4) ◽  
Author(s):  
Yu Zheng ◽  
Hao He ◽  
Lianqiong Jiang ◽  
Ji’an Duan
Keyword(s):  
Refractive Index ◽  
Optical Waveguides ◽  
High Efficiency ◽  
Transmission Loss ◽  
Structural Parameters ◽  
Coupling Efficiency ◽  
Single Mode ◽  
Efficient Operation ◽  
Refractive Index Difference ◽  
Efficient Coupling

Efficient coupling of micro/nano-optical waveguides with single-mode fibers is the premise for the efficient operation of the integrated photonic chip, which directly determines its optical performance. In this paper, the design principles of periodically segmented waveguide (PSW) structure used for high-efficiency fiber-chip coupling are proposed, and the effects of refractive index difference Δ on coupling efficiency and structural parameters are studied by simulation. It is found that as the Δ of the PSW increases, the period of the PSW tends to be smaller, and the coupling efficiency decreases continuously, reduced by around 0.673 dB in the range of Δ = 3% to Δ = 7%. Through the analysis of PSW optical mechanisms, it demonstrates that the main reason for the decrease of coupling efficiency is that the transmission loss of the tapered section increases sharply with the increase of Δ. High-Δ PSW is difficult to apply to highly integrated silica optical chips due to the unignorably insertion loss.

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