Composition, Structure, Morphology of thin Films Produced by Hydrochemical Deposition in PbSe-CdSe System

2015 ◽  
Vol 3 (1) ◽  
pp. 56-68
Author(s):  
Nina V. Zarubina ◽  
◽  
Ivan V. Zarubin ◽  
Larisa N. Maskaeva ◽  
Vyacheslav F. Markov
Keyword(s):  
Thin Films ◽  
Hydrochemical Deposition ◽  
Structure Morphology ◽  
Composition Structure

High textured AlN thin films grown by RF magnetron sputtering; composition, structure, morphology and hardness

Vacuum ◽  
2004 ◽  
Vol 75 (4) ◽  
pp. 331-338 ◽  
Author(s):  
I.C Oliveira ◽  
K.G Grigorov ◽  
H.S Maciel ◽  
M Massi ◽  
C Otani
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Structure Morphology ◽  
Composition Structure

Physical Properties Of Single-Phase Skutterudite Thin-Films (CoSb3 and IrSb3)

1998 ◽  
Vol 545 ◽  
Author(s):  
J. C. Caylor ◽  
A. M. Stacy ◽  
T. Sands ◽  
R. Gronsky
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Growth Parameters ◽  
X Ray Diffraction ◽  
Adhesion Properties ◽  
Rutherford Back Scattering ◽  
Phonon Component ◽  
Transmission Electron ◽  
Structure Morphology ◽  
High Vapor

AbstractBulk skutterudite phases based on the CoAs3 structure have yielded compositions with a high thermoelectric figure-of-merit (“ZT”) through the use of doping and substitutional alloying. It is postulated that further enhancements in ZT may be attained in artificially structured skutterudites by engineering the microstructure to enhance carrier mobility while suppressing the phonon component of the thermal conductivity. In this work the growth and properties of singlephase CoSb3 and IrSb3 skutterudite thin films are reported. The films are synthesized by pulsed laser deposition (PLD) where the crystallinity can be controlled by the deposition temperature. Powder X-ray diffraction (PXRD), Transmission electron microscopy (TEM) and Rutherford- Back Scattering (RBS) were used to probe phase, structure, morphology and stoichiometry of the films as functions of growth parameters and substrate type. A substrate temperature of 250°C was found to be optimal for the deposition of the skutterudites from stoichiometric targets. Above this temperature the film is depleted of antimony due to its high vapor pressure eventually reaching a composition where the skutterudite structure is no longer stable. However, when films are grown from antimony-rich targets the substrate temperature can be increased to at least 350°C while maintaining the skutterudite phase. In addition, adhesion properties of the films are explored in terms of the growth mode and substrate interaction. Finally, preliminary room temperature electrical and thermal measurements are reported.

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

On the effects of thermal treatment on the composition, structure, morphology, and optical properties of hydrogenated amorphous silicon-oxycarbide

2009 ◽  
Vol 24 (8) ◽  
pp. 2561-2573 ◽  
Author(s):  
Spyros Gallis ◽  
Vasileios Nikas ◽  
Eric Eisenbraun ◽  
Mengbing Huang ◽  
Alain E. Kaloyeros
Keyword(s):  
Optical Properties ◽  
Thermal Treatment ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Effective Cross Section ◽  
Silicon Oxycarbide ◽  
Nuclear Reaction Analysis ◽  
Structure Morphology ◽  
Composition Structure ◽  
Hydrogenated Amorphous

The composition, structure, morphology, and optical characteristics of hydrogenated amorphous silicon-oxycarbide (a-SiCxOyHz) materials were investigated as a function of experimental processing conditions and post-deposition thermal treatment. Thermal chemical vapor deposition (TCVD) was applied to the growth of three different types of a-SiCxOyHz films, namely, SiC-like (SiC1.08O0.07H0.21), Si-C-O (SiC0.50O1.20H0.22), and SiO2-like (SiC0.20O1.70H0.24). The resulting films were subsequently annealed at temperatures ranging from 500 °C to 1100 °C for 1 h in an argon atmosphere. The composition, structure, and morphology of as-deposited and post-annealed films were characterized by Fourier transform infrared spectroscopy (FTIR), x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), nuclear-reaction analysis (NRA), and scanning electron microscopy. Corresponding optical properties were assessed by spectroscopic ultraviolet-visible ellipsometry (UV-VIS-SE). These studies led to the identification of an optimized process window for the growth of Er doped silicon oxycarbide (SiC0.5O1.0:Er) thin film with strong room-temperature photoluminescence emission measured around 1540 nm within a broad (460 nm to 600 nm) wavelength band. Associated modeling studies showed that the effective cross section for Er excitation in the SiC0.5O1.0:Er matrix was approximately four orders of magnitude larger than its analog for direct optical excitation of Er ions.

scholarly journals The influence of multifunctional microalloyed ceramics microstructure on its capacity properties

2018 ◽  
Vol 15 (2) ◽  
pp. 187-199
Author(s):  
Jelena Purenovic ◽  
Nedeljko Ducic ◽  
Branko Matovic ◽  
Milovan Purenovic
Keyword(s):  
Crystal Structure ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Electrical Resistance ◽  
Ceramic Materials ◽  
Porous Ceramics ◽  
Electrophysical Properties ◽  
Microstructural Properties ◽  
Structure Morphology ◽  
Composition Structure

Modified porous alumo-silicate ceramics, alloyed with magnesium and microalloyed with aluminum, belongs to modern multifunctional ceramic materials. Microalloying has led to important changes in dielectric and electrical properties of ceramics, such as dielectric constant and electrical resistance. These changes are conditioned by the microstructural properties of modified porous ceramics. The obtained results have shown the unity of the influence of composition, structure, morphology and application of microalloyed multifunctional alumosilicate ceramics on electrophysical properties. Microstructural investigations have shown that this type of ceramics has an amorphous-crystal structure, which causes important changes in its electrical properties and affects its activity. Therefore the ceramics can be considered as an active dielectric. A correlation between microstructural properties and structurally sensitive, i.e. electrophysical properties of microalloyed multifunctional alumo-silicate ceramics, was confirmed.

Structure, Electrical and Magnetic Properties of Thin Films of La1−xMxMnO3 on Si

1999 ◽  
Vol 562 ◽  
Author(s):  
N. N. Mateeva ◽  
P. C. Hogan ◽  
K. H. Dahmen
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Transition Temperature ◽  
Buffer Layers ◽  
Ferromagnetic Transition ◽  
Electrical And Magnetic Properties ◽  
Insulator Metal Transition ◽  
Composition Structure

ABSTRACTThin films of lanthanum manganates doped with Ca2+, Sr2+, Ba2+ and Pb2+ have been deposited on Si(100) substrate and their electrical and magnetic properties were discussed with respect to the composition, structure and nature of the dopant. Buffer layers of YSZ and La0.8Al0.2O3 were employed and their effect on the materials was studied. Interesting magnetotransport properties were found in some of the films, where there is a large difference between the insulator-metal transition temperature and a ferromagnetic transition temperature.

Effect of annealing on structure, morphology and optoelectronic properties of nanocrystalline CuO thin films

2011 ◽  
Author(s):  
D. M. Jundale ◽  
S. G. Pawar ◽  
S. L. Patil ◽  
M. A. Chougule ◽  
P. R. Godse ◽  
...  
Keyword(s):  
Thin Films ◽  
Optoelectronic Properties ◽  
Structure Morphology
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