Three-Dimensional Two-Fluid Code for U-Tube Steam Generator Thermal Design Analysis

1986 ◽  
Vol 75 (2) ◽  
pp. 205-214 ◽  
Author(s):  
Jae Young Lee ◽  
Hee Cheon No
Keyword(s):  
Steam Generator ◽  
Three Dimensional ◽  
Design Analysis ◽  
Thermal Design ◽  
Two Fluid

Numerical Analysis of Heat Transfer Test of Supercritical Water in a Tube Using the Three-Dimensional Two-Fluid Model Code

2008 ◽  
Author(s):  
Takeharu Misawa ◽  
Hiroyuki Yoshida ◽  
Hidesada Tamai ◽  
Kazuyuki Takase
Keyword(s):  
Heat Transfer ◽  
Fluid Model ◽  
Three Dimensional ◽  
Design Procedure ◽  
Supercritical Pressure ◽  
Thermal Design ◽  
Energy Agency ◽  
Pressure Region ◽  
Two Fluid Model ◽  
Two Fluid

The three-dimensional two-fluid model analysis code ACE-3D is developed in Japan Atomic Energy Agency for the thermal design procedure on two-phase flow thermal-hydraulics of light water-cooled reactors. In order to perform thermal hydraulic analysis of SCWR, ACE-3D is enhanced to supercritical pressure region. As a result, it is confirmed that transient change in subcritical and supercritical pressure region can be simulated smoothly using ACE-3D, that ACE-3D can predict the results of the past heat transfer experiment in the supercritical pressure condition, and that introduction of thermal conductivity effect of the wall restrains fluctuation of wall.

Thermal Design of Highly-Efficient Thermoelectric Materials With Atomic-Scale Three-Dimensional Phononic Crystals

2007 ◽  
Author(s):  
Jean-Numa Gillet ◽  
Yann Chalopin ◽  
Sebastian Volz
Keyword(s):  
Thermal Conductivity ◽  
Bulk Material ◽  
Phononic Crystal ◽  
Three Dimensional ◽  
Mean Free Path ◽  
Dispersion Curves ◽  
Phononic Crystals ◽  
Thermal Design ◽  
Atomic Scale ◽  
Thermal Insulating

Owing to their thermal insulating properties, superlattices have been extensively studied. A breakthrough in the performance of thermoelectric devices was achieved by using superlattice materials. The problem of those nanostructured materials is that they mainly affect heat transfer in only one direction. In this paper, the concept of canceling heat conduction in the three spatial directions by using atomic-scale three-dimensional (3D) phononic crystals is explored. A period of our atomic-scale 3D phononic crystal is made up of a large number of diamond-like cells of silicon atoms, which form a square supercell. At the center of each supercell, we substitute a smaller number of Si diamond-like cells by other diamond-like cells, which are composed of germanium atoms. This elementary heterostructure is periodically repeated to form a Si/Ge 3D nanostructure. To obtain different atomic configurations of the phononic crystal, the number of Ge diamond-like cells at the center of each supercell can be varied by substitution of Si diamond-like cells. The dispersion curves of those atomic configurations can be computed by lattice dynamics. With a general equation, the thermal conductivity of our atomic-scale 3D phononic crystal can be derived from the dispersion curves. The thermal conductivity can be reduced by at least one order of magnitude in an atomic-scale 3D phononic crystal compared to a bulk material. This reduction is due to the decrease of the phonon group velocities without taking into account that of the phonon average mean free path.

scholarly journals Fast three-dimensional heat transfer model for computing internal temperatures in the bearing housing of automotive turbochargers

2018 ◽  
Vol 21 (8) ◽  
pp. 1286-1297 ◽  
Author(s):  
Antonio Gil ◽  
Andrés Omar Tiseira ◽  
Luis Miguel García-Cuevas ◽  
Tatiana Rodríguez Usaquén ◽  
Guillaume Mijotte
Keyword(s):  
Heat Transfer ◽  
Coke Formation ◽  
Three Dimensional ◽  
Heat Transfer Model ◽  
Operating Conditions ◽  
Thermal Design ◽  
Working Fluid ◽  
Transfer Model ◽  
Lumped Model ◽  
Bearing System

Each of the elements that make up the turbocharger has been gradually improved. In order to ensure that the system does not experience any mechanical failures or loss of efficiency, it is important to study which engine-operating conditions could produce the highest failing rate. Common failing conditions in turbochargers are mostly achieved due to oil contamination and high temperatures in the bearing system. Thermal management becomes increasingly important for the required engine performance. Therefore, it has become necessary to have accurate temperature and heat transfer models. Most thermal design and analysis codes need data for validation; often the data available fall outside the range of conditions the engine experiences in reality leading to the need to interpolate and extrapolate disproportionately. This article presents a fast three-dimensional heat transfer model for computing internal temperatures in the central housing for non-water cooled turbochargers and its direct validation with experimental data at different engine-operating conditions of speed and load. The presented model allows a detailed study of the temperature rise of the central housing, lubrication channels, and maximum level of temperature at different points of the bearing system of an automotive turbocharger. It will let to evaluate thermal damage done to the system itself and influences on the working fluid temperatures, which leads to oil coke formation that can affect the performance of the engine. Thermal heat transfer properties obtained from this model can be used to feed and improve a radial lumped model of heat transfer that predicts only local internal temperatures. Model validation is illustrated, and finally, the main results are discussed.

Analytical Modeling of Temperature Distribution in Interposer-Based Microelectronic Systems

2013 ◽  
Author(s):  
Leila Choobineh ◽  
Dereje Agonafer ◽  
Ankur Jain
Keyword(s):  
Heat Transfer ◽  
Finite Element ◽  
Temperature Field ◽  
Temperature Distribution ◽  
Analytical Modeling ◽  
Three Dimensional ◽  
Heat Transfer Process ◽  
Thermal Design ◽  
Research Attention ◽  
On Chip

Heterogeneous integration in microelectronic systems using interposer technology has attracted significant research attention in the past few years. Interposer technology is based on stacking of several heterogeneous chips on a common carrier substrate, also referred to as the interposer. Compared to other technologies such as System-on-Chip (SoC) or System-in-Package (SiP), interposer-based integration offers several technological advantages. However, the thermal management of an interposer-based system is not well understood. The presence of multiple heat sources in various die and the interposer itself needs to be accounted for in any effective thermal model. While a finite-element based simulation may provide a reasonable temperature prediction tool, an analytical solution is highly desirable for understanding the fundamentals of the heat transfer process in interposers. In this paper, we describe our recent work on analytical modeling of heat transfer in interposer-based microelectronic systems. The basic governing energy conservation equations are solved to derive analytical expressions for the temperature distribution in an interposer-based microelectronic system. These solutions are combined with an iterative approach to provide the three-dimensional temperature field in an interposer. Results are in excellent agreement with finite-element solutions. The analytical model is utilized to study the effect of various parameters on the temperature field in an interposer system. Results from this work may be helpful in the thermal design of microelectronic systems containing interposers.

Microprocessor Silicon Die Temperature Prediction by Simplified Boundary Conditions

2015 ◽  
Author(s):  
Koji Nishi ◽  
Tomoyuki Hatakeyama ◽  
Shinji Nakagawa ◽  
Masaru Ishizuka
Keyword(s):  
Heat Transfer ◽  
Heat Conduction ◽  
Boundary Conditions ◽  
Thermal Resistance ◽  
Hot Spot ◽  
Three Dimensional ◽  
Thermal Design ◽  
Target Temperature ◽  
One Dimensional ◽  
Thermal Network

The thermal network method has a long history with thermal design of electronic equipment. In particular, a one-dimensional thermal network is useful to know the temperature and heat transfer rate along each heat transfer path. It also saves computation time and/or computation resources to obtain target temperature. However, unlike three-dimensional thermal simulation with fine pitch grids and a three-dimensional thermal network with sufficient numbers of nodes, a traditional one-dimensional thermal network cannot predict the temperature of a microprocessor silicon die hot spot with sufficient accuracy in a three-dimensional domain analysis. Therefore, this paper introduces a one-dimensional thermal network with average temperature nodes. Thermal resistance values need to be obtained to calculate target temperature in a thermal network. For this purpose, thermal resistance calculation methodology with simplified boundary conditions, which calculates thermal resistance values from an analytical solution, is also introduced in this paper. The effectiveness of the methodology is explored with a simple model of the microprocessor system. The calculated result by the methodology is compared to a three-dimensional heat conduction simulation result. It is found that the introduced technique matches the three-dimensional heat conduction simulation result well.

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