scholarly journals Bit Error Probability of M-QAM under Impulsive Noise and Fading Modeled by Markov Chains

2018 ◽  
Vol 27 (4) ◽  
pp. 1183-1190 ◽  
Author(s):  
H. S. Silva ◽  
M. S. de Alencar ◽  
W. J. L. de Queiroz ◽  
R. de A. Coelho ◽  
F. Madeiro
Keyword(s):  
Markov Chains ◽  
Error Probability ◽  
Impulsive Noise ◽  
Bit Error Probability

Bit error probability of the M -QAM scheme under η -μ fading and impulsive noise in a communication system using spatial diversity

2019 ◽  
Vol 32 (11) ◽  
pp. e3959 ◽  
Author(s):  
Hugerles S. Silva ◽  
Marcelo S. Alencar ◽  
Wamberto J. L. Queiroz ◽  
Danilo B. T. Almeida ◽  
Francisco Madeiro
Keyword(s):  
Communication System ◽  
Error Probability ◽  
Impulsive Noise ◽  
Spatial Diversity ◽  
Bit Error Probability

Bit Error Probability of M-QAM Signals Subject to Impulsive Noise and \(\alpha\)-\(\mu\) Fading

2019 ◽  
Author(s):  
Hugerles Silva ◽  
Danilo Almeida ◽  
Wamberto Queiroz ◽  
Francisco Madeiro ◽  
Iguatemi Fonseca ◽  
...  
Keyword(s):  
Error Probability ◽  
Impulsive Noise ◽  
Bit Error Probability

Bit error probability of M-QAM under η-μ or κ-μ fading and impulsive noise gated by a signal characterized by a Markov process or Poisson process

2020 ◽  
Vol 100 ◽  
pp. 102699 ◽  
Author(s):  
Hugerles S. Silva ◽  
Marcelo S. Alencar ◽  
Wamberto J.L. Queiroz ◽  
Danilo B.T. Almeida ◽  
Francisco Madeiro
Keyword(s):  
Markov Process ◽  
Poisson Process ◽  
Error Probability ◽  
Impulsive Noise ◽  
Bit Error Probability

scholarly journals Closed-Form Expression for the Bit Error Probability of the M-QAM for a Channel Subjected to Impulsive Noise and Nakagami Fading

2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Hugerles S. Silva ◽  
Marcelo S. Alencar ◽  
Wamberto J. L. Queiroz ◽  
Danilo B. T. Almeida ◽  
Francisco Madeiro
Keyword(s):  
Density Function ◽  
Error Probability ◽  
Channel Model ◽  
Impulsive Noise ◽  
Additive White Gaussian Noise ◽  
Closed Form Expression ◽  
Modulation Scheme ◽  
Nakagami Fading ◽  
Bit Error Probability ◽  
Noise Ratio

In this paper, new exact expressions for evaluating the bit error probability (BEP) of the M-ary quadrature amplitude modulation scheme (M-QAM) for a channel model characterized by double gated additive white Gaussian noise (G2AWGN) and Nakagami fading are presented. The derivation of the BEP is performed considering a method in which the multiplicative fading is transformed in an additive noise R obtained by dividing the received signal by the estimated fading envelope. In addition, the probability density function (PDF) and cumulative density function (CDF) of the random variable R that represents the aforementioned noise are obtained for the G2AWGN. The BEP curves as a function of the signal to permanent noise ratio for several values of the signal to impulsive noise ratio, modulation order, and fading parameters are also presented.

Bit Error Probability of M -QAM Subject to Impulsive Noise and Rayleigh Fading

2018 ◽  
Author(s):  
Hugerles Silva ◽  
Marcelo Alencar ◽  
Wamberto Queiroz ◽  
Danilo Almeida ◽  
F. Madeiro
Keyword(s):  
Error Probability ◽  
Rayleigh Fading ◽  
Impulsive Noise ◽  
Bit Error Probability

scholarly journals Ratio-based multi-level resistive memory cells

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Miguel Angel Lastras-Montaño ◽  
Osvaldo Del Pozo-Zamudio ◽  
Lev Glebsky ◽  
Meiran Zhao ◽  
Huaqiang Wu ◽  
...  
Keyword(s):  
Error Probability ◽  
Resistance Switching ◽  
Closed Form Expression ◽  
Memory Cells ◽  
Resistive Memory ◽  
Worst Case ◽  
Information Encoding ◽  
Bit Error Probability ◽  
Multi Level ◽  
Switching Devices

AbstractRatio-based encoding has recently been proposed for single-level resistive memory cells, in which the resistance ratio of a pair of resistance-switching devices, rather than the resistance of a single device (i.e. resistance-based encoding), is used for encoding single-bit information, which significantly reduces the bit error probability. Generalizing this concept for multi-level cells, we propose a ratio-based information encoding mechanism and demonstrate its advantages over the resistance-based encoding for designing multi-level memory systems. We derive a closed-form expression for the bit error probability of ratio-based and resistance-based encodings as a function of the number of levels of the memory cell, the variance of the distribution of the resistive states, and the ON/OFF ratio of the resistive device, from which we prove that for a multi-level memory system using resistance-based encoding with bit error probability x, its corresponding bit error probability using ratio-based encoding will be reduced to $$x^2$$ x 2 at the best case and $$x^{\sqrt{2}}$$ x 2 at the worst case. We experimentally validated these findings on multiple resistance-switching devices and show that, compared to the resistance-based encoding on the same resistive devices, our approach achieves up to 3 orders of magnitude lower bit error probability, or alternatively it could reduce the cell’s programming time and programming energy by up 5–10$$\times$$ × , while achieving the same bit error probability.

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