scholarly journals Hole-Phonon Scattering Mechanism in Iii-V Semiconductor Multiple Quantum Wells

2008 ◽  
Vol 5 (1) ◽  
pp. 203-204
Author(s):  
Smruti Motarwar ◽  
Kanchan Talele ◽  
E.P. Samuel ◽  
D.S. Patil
Keyword(s):  
Quantum Wells ◽  
Phonon Scattering ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Scattering Mechanism

Lineshape Analysis of Intersubband Transitions in Multiple Quantum Wells

1995 ◽  
Vol 406 ◽  
Author(s):  
G. Gumbs
Keyword(s):  
Absorption Spectrum ◽  
Quantum Wells ◽  
Exchange Interaction ◽  
Phonon Scattering ◽  
Peak Position ◽  
Absorption Peak ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Intersubband Transitions ◽  
Electron Effective Mass

AbstractConduction intersubband transitions between the ground and first excited states in Al0.3Ga0.7As/GaAs multiple quantum wells (MQWs) are studied as a function of the twodimensional electron gas density (0.75 × 1012 ≤ σ ≤ 3.75 × 1012 cm−2) and temperature (5 ≤ T ≤ 300 K). There is no electron tunneling between the wells and well regions are uniformly doped with silicon donors. Theoretically, we have solved the Schrödinger equation containing the self-consistent Hartree potential, in which the z-dependencies of both electron effective mass and dielectric constant, as well as the non-parabolicity in the conduction energy subband dispersion have been taken into consideration. By applying many-body theory which includes the depolarization-shift from a collective dipole moment and the excitonicshift from the negative exchange interaction, we calculate the absorption spectrum as a function of the incident photon energy hw for different values of T and σ. From this, we can quantitatively analyze both T- and σ-dependencies of the peak position and the full width at half-maximum (FWHM) of peak values. The blue-shift or red-shift in the absorption peak position are quantitatively reproduced as either T or σ is reduced. The exchange interaction which depends on σ, will modify the energy subband dispersion. Therefore, the absorption peak will be broadened by the exchange interaction. The T-dependence of broadening from the optical-phonon scattering is also taken into account by a phenomenological model. From the calculated absorption spectrum as a function of o, we have successfully reproduced and explained the σ-dependence of FWHM measured in recent experiments.

Secondary emission and acoustic-phonon scattering induced by strong magnetic fields in multiple quantum wells

1992 ◽  
Vol 46 (24) ◽  
pp. 16005-16011 ◽  
Author(s):  
V. F. Sapega ◽  
V. I. Belitsky ◽  
T. Ruf ◽  
H. D. Fuchs ◽  
M. Cardona ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Acoustic Phonon ◽  
Phonon Scattering ◽  
Secondary Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Strong Magnetic Fields

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

FAR INFRARED MAGNETO-ABSORPTION STUDY OF BARRIER IMPURITIES AND SCREENING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Far Infrared ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Absorption Study

Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars

2012 ◽  
Vol 100 (26) ◽  
pp. 261103 ◽  
Author(s):  
J.-R. Chang ◽  
S.-P. Chang ◽  
Y.-J. Li ◽  
Y.-J. Cheng ◽  
K.-P. Sou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Luminescent Properties ◽  
Multiple Quantum Wells ◽  
Core Shell ◽  
Multiple Quantum
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