scholarly journals G213 Plasma nitriding for steels under atmospheric pressure using pulsed-arc thermal plasma

2012 ◽  
Vol 2012 (0) ◽  
pp. 437-438
Author(s):  
Ryuta Ichiki ◽  
Hirokazu Nagamatsu ◽  
Takashi Inoue ◽  
Masashi Yoshida ◽  
Shuichi Akamine ◽  
...  
Keyword(s):  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
Plasma Nitriding ◽  
Pulsed Arc

Nitriding of yttria-stabilized zirconia in atmospheric pressure microwave plasma

2009 ◽  
Vol 24 (6) ◽  
pp. 2021-2028 ◽  
Author(s):  
R. Milani ◽  
R.P. Cardoso ◽  
T. Belmonte ◽  
C.A. Figueroa ◽  
C.A. Perottoni ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Atmospheric Pressure ◽  
Microwave Plasma ◽  
Plasma Nitriding ◽  
Nitrided Layer ◽  
Zirconium Nitride ◽  
Stabilized Zirconia ◽  
Partially Stabilized Zirconia ◽  
X Ray ◽  
Yttria Partially Stabilized Zirconia

High temperature plasma nitriding of yttria-partially-stabilized zirconia in atmospheric pressure microwave plasma was investigated. The morphological, mechanical, and physicochemical characteristics of the resulting nitrided layer were characterized by different methods, such as optical and scanning electron microscopy, microindentation, x-ray diffraction, narrow resonant nuclear reaction profiling, secondary neutral mass spectrometry, and x-ray photoelectron spectroscopy, aiming at investigating the applicability of this highly efficient process for nitriding of ceramics. The structure of the plasma nitrided layer was found to be complex, composed of tetragonal and cubic zirconia, as well as zirconium nitride and oxynitride. The growth rate of the nitrided layer, 4 µm/min, is much higher than that obtained by any other previous nitriding process, whereas a typical 50% increase in Vickers hardness over that of yttria-partially-stabilized zirconia was observed.

Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric pressure micro-thermal-plasma-jet irradiation

2021 ◽  
Author(s):  
Takuma Sato ◽  
Hiroaki Hanafusa ◽  
Seiichiro HIGASHI
Keyword(s):  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
Hole Concentration ◽  
Thin Film Transistor ◽  
Plasma Jet ◽  
Scanning Speed ◽  
Electrical Characteristics ◽  
Thermal Plasma Jet ◽  
High Carrier Mobility ◽  
High Carrier

Abstract Crystalline-germanium (c-Ge) is an attractive material for a thin-film transistor (TFT) channel because of its high carrier mobility and applicability to a low-temperature process. We present the electrical characteristics of c-Ge crystallized by atmospheric pressure micro-thermal-plasma-jet (µ-TPJ). The µ-TPJ crystalized c-Ge showed the maximum Hall mobility of 1070 cm2·V−1·s−1 with its hole concentration of ~ 1016 cm−3, enabling us to fabricate the TFT with field-effect mobility (μ FE) of 196 cm2·V−1·s−1 and ON/OFF ratio (R ON/OFF) of 1.4 × 104. On the other hand, RON/OFFs and μFEs were dependent on the scanning speed of the TPJ, inferring different types of defects were induced in the channel regions. These findings show not only a possibility of the TPJ irradiation as a promising method to make a c-Ge TFT on insulating substrates.

Study of the thermal plasma etching at atmospheric pressure on silica rods

2004 ◽  
Vol 37 (8) ◽  
pp. 1206-1213 ◽  
Author(s):  
R Benocci ◽  
P Esena ◽  
A Galassi ◽  
M Piselli ◽  
M Sciascia
Keyword(s):  
Plasma Etching ◽  
Thermal Plasma ◽  
Atmospheric Pressure

Atmospheric Pressure Non-Thermal Plasma in Food Processing

2021 ◽  
pp. 223-251
Author(s):  
Mahreen ◽  
Priyanka Prasad ◽  
Satyananda Kar ◽  
Jatindra K. Sahu
Keyword(s):  
Thermal Plasma ◽  
Food Processing ◽  
Atmospheric Pressure ◽  
Non Thermal Plasma
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