scholarly journals Rheo-Optical Studies on the Deformation Mechanism of Semicrystalline Polymers. III. An Improved Technique for Oscillatory Measurements in Rheo-Optics and Its Application to Dynamic X-Ray Diffraction Measurements

1978 ◽  
Vol 10 (3) ◽  
pp. 315-329 ◽  
Author(s):  
Shoji Suehiro ◽  
Takeshi Yamada ◽  
Hajime Inagaki ◽  
Hiromichi Kawai
2019 ◽  
Vol 2019 ◽  
pp. 1-11 ◽  
Author(s):  
H. Letifi ◽  
Y. Litaiem ◽  
D. Dridi ◽  
S. Ammar ◽  
R. Chtourou

In this paper, we have reported a novel photocatalytic study of vanadium-doped SnO2 nanoparticles (SnO2: V NPs) in rhodamine B degradation. These NPs have been prepared with vanadium concentrations varying from 0% to 4% via the coprecipitation method. Structural, morphological, and optical properties of the prepared nanoparticles have been investigated by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, transmission electron microscope (TEM), and UV-Vis and photoluminescence (PL) spectroscopy. Structural properties showed that both undoped and SnO2: V NPs exhibited the tetragonal structure, and the average crystal size has been decreased from 20 nm to 10 nm with the increasing doping level of vanadium. Optical studies showed that the absorption edge of SnO2: V NPs showed a redshift with the increasing vanadium concentration. This redshift leads to the decrease in the optical band gap from 3.25 eV to 2.55 eV. A quenching in luminescence intensity has been observed in SnO2: V NPs, as compared to the undoped sample. Rhodamine B dye (RhB) has been used to study the photocatalytic degradation of all synthesized NPs. As compared to undoped SnO2 NPs, the photocatalytic activity of SnO2: V NPs has been improved. RhB dye was considerably degraded by 95% within 150 min over on the SnO2: V NPs.


2013 ◽  
Vol 6 (1) ◽  
pp. 1-9 ◽  
Author(s):  
P. R. Deepti ◽  
J. Shanti

Triglycine sulphate (TGS), an important ferroelectric material has been widely used in the fabrication of high sensitivity infrared detectors at room temperature. Single crystals of KDP doped TGS was grown by slow evaporation method at room temperature in this study. The grown crystal was characterized by UV-Vis spectroscopy, FTIR spectroscopy, powder X-ray diffraction studies, and ferroelectric studies. KDP doped TGS crystals were found to be highly transparent and full faced. The experimental results evidence the suitability of the grown crystal for optoelectronic applications.  Keywords: Crystal growth; KDP-doped TGS; Ferroelectric studies  © 2014 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved.  doi: http://dx.doi.org/10.3329/jsr.v6i1.16584 J. Sci. Res. 6 (1), 1-9 (2014)


1992 ◽  
Vol 40 (1-4) ◽  
pp. 73-83 ◽  
Author(s):  
S. Gupta ◽  
B. Majumdar ◽  
P. Mandal ◽  
R. Paul ◽  
S. Paul

1998 ◽  
Vol 92 (1) ◽  
pp. 7-12 ◽  
Author(s):  
T. Kaniowski ◽  
W. Łużny ◽  
S. Nizioł ◽  
J. Sanetra ◽  
M. Trznadel

A microthermostat design for single crystal studies is described which gives control of specimen temperature in the range 30 to 100°C to an accuracy of ± 0.1 degC. For X-ray diffraction experiments the furnace comprises a beryllium tube chamber. For optical studies, the control system is combined with a chamber suitable for mounting on the stage of a polarizing microscope. Temperature cycles with single crystals of potassium nitrite indicate that the thermal transformation around 40°C from a monoclinic structure to one which is probably cubic, is continuous and reversible. Hysteresis is found in the transformation; high- and low-temperature structures co-exist in a hybrid single crystal over a temperature range.


2007 ◽  
Vol 31 ◽  
pp. 39-41 ◽  
Author(s):  
Lee Siang Chuah ◽  
Hassan Zainuriah ◽  
Abu Hassan Haslan

This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as grown GaN. The samples were investigated by scanning electron microscopy (SEM), high resolution x-ray diffraction (HRXRD), and photoluminescence (PL). The porous area is very uniform, with pore diameter in the range of 80-110 nm. XRD measurements showed that the (0002) diffraction plane peak width of porous samples was slightly broader than the as-grown sample. PL measurements revealed that the near band edge peak of the porous samples were redshifted. Metal-semiconductor-metal (MSM) photodiode was fabricated on the samples. For as grown GaN sample, this detector shows a sharp cut-off wavelength at 362 nm. A maximum responsivity of 0.258 A/W was achieved at 360 nm. For the porous GaN sample, this detector shows a sharp cut-off wavelength at 364 nm. A maximum responsivity of 0.771 A/W was achieved at 363 nm.


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