THE ANALYSIS OF SPECTRUMS OF PHOTOCONDUCTIVITY OF SEMICONDUCTING COMPOUNDS АIIIВV

2015 ◽  
Vol 8 (2) ◽  
pp. 17-18
Author(s):  
Макаренко ◽  
F. Makarenko ◽  
Скляр ◽  
V. Sklyar ◽  
Зольников ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Semiconducting Compounds ◽  
Recombination Parameter

In paper the calculus of the abnormal spectrums of photoconductivity in the field of fundamental passages of high-ohmic indium phosphide with an admixture of copper is reduced. The abnormal occurrence of additional extremes speaks a stratification of recombination parameter on depth of a sample

Luminescence from individual dislocations in II-VI and III-V semiconductors

1991 ◽  
Vol 49 ◽  
pp. 834-835
Author(s):  
J W Steeds
Keyword(s):  
Group Iv ◽  
Luminescence Properties ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Wide Range ◽  
Basic Physics ◽  
Semiconducting Compounds ◽  
Diamond Group ◽  
Non Destructive ◽  
Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

New semiconducting compounds of diamond type structure

Physica ◽  
1954 ◽  
Vol 3 (7-12) ◽  
pp. 1107-1109 ◽  
Author(s):  
C GOODMAN ◽  
R DOUGLAS
Keyword(s):  
Type Structure ◽  
Semiconducting Compounds ◽  
Diamond Type

Electroabsorption in single crystal indium phosphide

1983 ◽  
Vol 46 (8) ◽  
pp. 643-645
Author(s):  
T.M. McGinnity ◽  
G.G. Roberts
Keyword(s):  
Indium Phosphide ◽  
Single Crystal

Indium phosphide and quaternary doping superlattices grown by liquid-phase epitaxy

1987 ◽  
Vol 23 (7) ◽  
pp. 324 ◽  
Author(s):  
P.D. Greene ◽  
A.D. Prins ◽  
D.J. Dunstan ◽  
A.R. Adams
Keyword(s):  
Liquid Phase ◽  
Indium Phosphide ◽  
Liquid Phase Epitaxy

Electronic Structure of A1BiS2 Semiconducting Compounds

1991 ◽  
Vol 167 (1) ◽  
pp. 101-107 ◽  
Author(s):  
A. V. Soldatov ◽  
Yu. V. Sukhetskii ◽  
A. A. Lavrentiev ◽  
A. N. Gusatinskii ◽  
A. L. Gubskii
Keyword(s):  
Electronic Structure ◽  
Semiconducting Compounds
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