scholarly journals Measurement of L X-Ray Production Cross-Sections of Au, Ho, Bi and K-X-Ray Cross Sections of Nb, Sn, Sb by Using Protons of Energy 4 MeV

2013 ◽  
Vol 12 (1) ◽  
pp. 1-8 ◽  
Author(s):  
Daisy Joseph ◽  
S V S Nageshwara Rao ◽  
S Kailas

L X-ray production cross-sections for the elements Au, Ho, Bi and K X-ray production cross-sections for the Nb, Sn, Sb have been measured using proton beam of energy 4MeV. The experimentally measured cross sections using PIXE (Proton Induced X-ray Emission) and RBS (Rutherford Backscattering Spectrometry) have been compared with the values obtained by the theoretical predictions of ECPSSR model and they are in agreement within an experimental error of 10%.

1983 ◽  
Vol 27 ◽  
Author(s):  
L. Salamanca-Riba ◽  
B.S. Elman ◽  
M.S. Dresselhaus ◽  
T. Venkatesan

ABSTRACTRutherford backscattering spectrometry (RBS) is used to characterize the stoichiometry of graphite intercalation compounds (GIC). Specific application is made to several stages of different donor and acceptor compounds and to commensurate and incommensurate intercalants. A deviation from the theoretical stoichiometry is measured for most of the compounds using this non-destructive method. Within experimental error, the RBS results agree with those obtained from analysis of the (00ℓ) x-ray diffractograms and weight uptake measurements on the same samples.


1973 ◽  
Vol 17 ◽  
pp. 445-456
Author(s):  
R. F. Chaturvedi ◽  
J. L. Duggan ◽  
T. J. Gray ◽  
C. C. Sachtleben ◽  
J. Lin

AbstractAbsolute K-shell ionization cross sections were measured for Ti, Co, Ge, Rb, and Sn for incident oxygen ions from 16-44 MeV. The x-rays were measured with a high resolution Si(Li) detector (166 eV at 5.9 keV). All of the data represents cross section measurements for thin targets. The measured cross sections for these elements are compared to the theoretical predictions of the Binary Encounter Approximation (BEA). Kα/Kβratios and energy shifts were also extracted from the data. The experimental data are compared to measured cross sections for other elements to give an overview of the systematics for oxygen ion induced x-ray production cross sections in this energy range. Some comment will also be given in regard to the use of oxygen ions to measure the parameters associated with ion implanted semiconductors.


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