scholarly journals Thermal stability of free and immobilized invertase studied by activity assay and calorimetry.

1985 ◽  
Vol 49 (12) ◽  
pp. 3591-3593 ◽  
Author(s):  
Hisao ICHIJO ◽  
Hatsuho UEDAIRA ◽  
Tetsuro SUEHIRO ◽  
Jun''ichi NAGASAWA ◽  
Aizo YAMAUCHI
1989 ◽  
Vol 53 (3) ◽  
pp. 833-834 ◽  
Author(s):  
Hisao ICHIJO ◽  
Hatsuho UEDAIRA ◽  
Tetsuro SUEHIRO ◽  
Jun''ichi NAGASAWA ◽  
Aizo YAMAUCHI ◽  
...  

1998 ◽  
Vol 309 (1-2) ◽  
pp. 193-196 ◽  
Author(s):  
Sunil Nath ◽  
Gyana R. Satpathy ◽  
Rahul Mantri ◽  
Shashank Deep ◽  
Jagdish C. Ahluwalia

1989 ◽  
Vol 53 (3) ◽  
pp. 833-834
Author(s):  
Hisao Ichijo ◽  
Hatsuho Uedaira ◽  
Tetsuro Suehiro ◽  
Nagasawa Jun’ichi ◽  
Aizo Yamauchi ◽  
...  

1985 ◽  
Vol 49 (12) ◽  
pp. 3591-3593
Author(s):  
Hisao HisaoIchijo ◽  
Hatsuho HatsuhoUedaira ◽  
Tetsuro Suehiro ◽  
Jun’ichi Nagasawa ◽  
NagasawaAizo Yamauchi

2018 ◽  
Vol 189 (3) ◽  
pp. 206-217
Author(s):  
Dariusz Poplawski ◽  
Maciej Kaniewski ◽  
Jozef Hoffmann ◽  
Krystyna Hoffmann

The paper presents the results of studies carried out using differential thermal analysis (DTA) and differential scanning calorimetry (DSC), conjugated with thermogravimetry (TG). Measurements were made for samples with differentiated compositions, mainly consisting of ammonium nitrate with fertilizer purity and compounds that may be present in nitrogen fertilizers as potential additives or contaminants. The possibilities of applied techniques and recommendations concerning proper selection of measurement conditions are described. Furthermore, the method of interpretation of the obtained results is presented, which allows evaluating the thermal stability of the tested mixtures for the safety and quality of nitrogen fertilizers.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas

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