scholarly journals Thermal Stability of Individual Molecular Species of Soybeanβ-Conglycinin

1996 ◽  
Vol 60 (11) ◽  
pp. 1870-1871 ◽  
Author(s):  
Shimpei Morita ◽  
Masami Fukase ◽  
Yuhei Morita
Keyword(s):  
Thermal Stability ◽  
Molecular Species ◽  
Individual Molecular Species ◽  
Thermal Stability Of

INVESTIGATION ON OXIDATION AND THERMAL STABILITY OF JATROPHA OIL

2015 ◽  
Vol 77 (21) ◽  
Author(s):  
Abdul Munir Hidayat Syah Lubis ◽  
Bambang Ariwahjoedi ◽  
Mustafar Bin Sudin
Keyword(s):  
Thermal Stability ◽  
Thermogravimetric Analysis ◽  
Thermal Degradation ◽  
Molecular Species ◽  
Functional Group ◽  
Jatropha Oil ◽  
Resistance To Oxidation ◽  
Before And After ◽  
Gas Environment ◽  
Thermal Stability Of

The application of jatropha oil as alternative lubricant basestock has emerged recently. However, the resistance to oxidation and thermal stability of this oil become a concern to its application as lubricant. In this study, the oxidation and thermal degradation of crude jatropha oil (CJO) have been studied. The oxidation of the CJO was investigated by air bubbling method. The viscosity and functional group changes due to oxidation were studied before and after oxidation test. The thermal stability of CJO was investigated by using Thermogravimetric analysis (TGA) method in O2 and N2 gases environment. Jatropha oil was found oxidized by autoxidation mechanism produces high molecular species which capable to increase viscosity of the oil. The TGA results shows that CJO thermally stable in the temperature below 168°C in O2 gas environment and below 225°C in N2 gas environment. 

scholarly journals Thermal Stability of the Major Molecular Species of Collagen in the Kuruma Prawn Muscle

1996 ◽  
Vol 62 (1) ◽  
pp. 105-109 ◽  
Author(s):  
Shohshi Mizuta ◽  
Reiji Yoshinaka ◽  
Mamoru Sato ◽  
Morihiko Sakaguchi
Keyword(s):  
Thermal Stability ◽  
Molecular Species ◽  
Major Molecular Species ◽  
Thermal Stability Of

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Practical criteria for the thermal stability of a unidimensional superconductor

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Time and thermal stability of magnetic properties of amorphous Fe80TM3B17 alloys

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas
Keyword(s):  
Thermal Stability ◽  
Magnetic Properties ◽  
Thermal Stability Of

Thermal stability of organic-inorganic nanocomposites based on system of dimethacrylate-tetraethoxysilane and their kinetic features

2016 ◽  
Vol 38 (3) ◽  
pp. 211-217
Author(s):  
G.I. Khovanets’ ◽  
◽  
O.Y. Makido ◽  
V.V. Kochubey ◽  
Y.G. Medvedevskikh ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Inorganic Nanocomposites ◽  
Thermal Stability Of ◽  
Kinetic Features
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