Xylitol Production from Rice Straw Hemicellulose Hydrolyzate by Polyacrylic Hydrogel Thin Films with Immobilized Candida subtropicalis WF79

2008 ◽  
Vol 105 (2) ◽  
pp. 97-105 ◽  
Author(s):  
Wen-Chang Liaw ◽  
Chee-Shan Chen ◽  
Wen-Shion Chang ◽  
Kuan-Pin Chen
2016 ◽  
Vol 42 (1) ◽  
pp. 225-233 ◽  
Author(s):  
Mahmoud Fathy ◽  
Th. Abdel Moghny ◽  
Mahmoud Ahmed Mousa ◽  
Abdel-Hameed A-A. El-Bellihi ◽  
Ahmed E. Awadallah

2005 ◽  
Vol 48 (3) ◽  
pp. 497-502 ◽  
Author(s):  
Solange Inês Mussatto ◽  
Inês Conceição Roberto

Xylitol was produced by Candida guilliermondii from charcoal-treated and untreated rice straw hemicellulosic hydrolysate with or without nutrients (ammonium sulphate, calcium chloride, rice bran extract). Both, xylitol yield and volumetric productivity decreased significantly when the nutrients were added to treated and untreated hydrolysates. In the treated hydrolysate, the efficiency of xylose conversion to xylitol was 79% when the nutrients were omitted. The results demonstrated that rice straw hemicellulosic hydrolysate treated with activated charcoal was a cheap source of xylose and other nutrients for xylitol production by C. guilliermondii. The non-necessity of adding nutrients to the hydrolysate media would be very advantageous since the process becomes less costly.


2006 ◽  
Vol 41 (3) ◽  
pp. 653-658 ◽  
Author(s):  
Keikhosro Karimi ◽  
Giti Emtiazi ◽  
Mohammad J. Taherzadeh

Agronomy ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 79
Author(s):  
Soma Bedő ◽  
Anikó Fehér ◽  
Panwana Khunnonkwao ◽  
Kaemwich Jantama ◽  
Csaba Fehér

Crop residues can serve as low-cost feedstocks for microbial production of xylitol, which offers many advantages over the commonly used chemical process. However, enhancing the efficiency of xylitol fermentation is still a barrier to industrial implementation. In this study, the effects of oxygen transfer rate (OTR) (1.1, 2.1, 3.1 mmol O2/(L × h)) and initial xylose concentration (30, 55, 80 g/L) on xylitol production of Candida boidinii NCAIM Y.01308 on xylose medium were investigated and optimised by response surface methodology, and xylitol fermentations were performed on xylose-rich hydrolysates of wheat bran and rice straw. High values of maximum xylitol yields (58–63%) were achieved at low initial xylose concentration (20–30 g/L) and OTR values (1.1–1.5 mmol O2/(L × h)). The highest value for maximum xylitol productivity (0.96 g/(L × h)) was predicted at 71 g/L initial xylose and 2.7 mmol O2/(L × h) OTR. Maximum xylitol yield and productivity obtained on wheat bran hydrolysate were 60% and 0.58 g/(L × h), respectively. On detoxified and supplemented hydrolysate of rice straw, maximum xylitol yield and productivity of 30% and 0.19 g/(L × h) were achieved. This study revealed the terms affecting the xylitol production by C. boidinii and provided validated models to predict the achievable xylitol yields and productivities under different conditions. Efficient pre-treatments for xylose-rich hydrolysates from rice straw and wheat bran were selected. Fermentation using wheat bran hydrolysate and C. boidinii under optimized condition is proved as a promising method for biotechnological xylitol production.


Author(s):  
L.J. Chen ◽  
Y.F. Hsieh

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.


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