scholarly journals Effective dose assessment in the maxillofacial region using thermoluminescent (TLD) and metal oxide semiconductor field-effect transistor (MOSFET) dosemeters: a comparative study

2014 ◽  
Vol 43 (8) ◽  
pp. 20140202 ◽  
Author(s):  
J Koivisto ◽  
D Schulze ◽  
J Wolff ◽  
D Rottke
Keyword(s):  
Metal Oxide ◽  
Comparative Study ◽  
Effective Dose ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Dose Assessment ◽  
Oxide Semiconductor ◽  
Maxillofacial Region ◽  
Effect Transistor

Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

1987 ◽  
Vol 65 (8) ◽  
pp. 995-998
Author(s):  
N. G. Tarr
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Potential Drop ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Analytic Approximation ◽  
Effect Transistor ◽  
Long Channel

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.

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