Improving Calibration Transfer between Shortwave near Infrared Silicon Photodiode Array Instruments

2016 ◽  
Vol 24 (1) ◽  
pp. 59-68 ◽  
Author(s):  
Clinton J. Hayes ◽  
Kerry B. Walsh ◽  
Colin V. Greensill
Keyword(s):  
Near Infrared ◽  
Silicon Photodiode ◽  
Calibration Transfer ◽  
Photodiode Array

Calibration Transfer between Miniature Photodiode Array-Based Spectrometers in the near Infrared Assessment of Mandarin Soluble Solids Content

2002 ◽  
Vol 10 (1) ◽  
pp. 27-35 ◽  
Author(s):  
C.V. Greensill ◽  
K.B. Walsh
Keyword(s):  
Near Infrared ◽  
Model Updating ◽  
Soluble Solids ◽  
Soluble Solid Content ◽  
Calibration Model ◽  
Calibration Transfer ◽  
Orthogonal Signal Correction ◽  
Significant Difference ◽  
Photodiode Array ◽  
Direct Standardisation

The transfer of predictive models among photodiode array based, short wave near infrared spectrometers using the same illumination/detection optical geometry has been attempted using various chemometric techniques, including slope and bias correction (SBC), direct standardisation (DS), piecewise direct standardisation (PDS), double window PDS (DWPDS), orthogonal signal correction (OSC), finite impulse transform (FIR) and wavelet transform (WT). Additionally, an interpolation and photometric response correction method, a wavelength selection method and a model updating method were assessed. Calibration transfer was attempted across two populations of mandarin fruit. Model performance was compared in terms of root mean squared error of prediction ( RMSEP), using Fearn's significance testing, for calibration transfer (standardisation) between pairs of spectrometers from a group of four spectrometers. For example, when a calibration model (Root Mean Square Error of Cross-Validation [ RMSECV = 0.26% soluble solid content (SSC)], developed on one spectrometer, was used with spectral data collected on another spectrometer, a poor prediction resulted ( RMSEP = 2.5% SSC). A modified WT method performed significantly better (e.g. RMSEP = 0.25% SSC) than all other standardisation methods (10 of 12 cases), and almost on a par with model updating (MU) (nine cases with no significant difference, one case and two cases significantly better for WT and MU, respectively).

A Photodiode-Array-Based Near-Infrared Spectrophotometer for the 600–1100 nm Wavelength Region

1989 ◽  
Vol 43 (1) ◽  
pp. 27-32 ◽  
Author(s):  
David M. Mayes ◽  
James B. Callis
Keyword(s):  
Spectral Resolution ◽  
Near Infrared ◽  
Dynamic Range ◽  
Wavelength Region ◽  
Stray Light ◽  
Silicon Photodiode ◽  
Baseline Noise ◽  
Array Detectors ◽  
Infrared Spectrophotometer ◽  
Photodiode Array

We describe a silicon photodiode-array (PDA)-based near-infrared spectrophotometer for making molecular absorption/diffuse reflectance measurements in the 600–1100 nm wavelength range. Absorptions in this spectral region arise from both low-lying electronic states and vibrational overtones of CH, NH, and OH functional groups and combination bands. One disadvantage of silicon-based array detectors is their decreasing quantum efficiency at wavelengths longer than 950 nm. For transmission measurements, this can be compensated for by the technique of spectral plane masking, which markedly improves the consistency and overall level of baseline noise as well as the dynamic range. The instrument's performance is evaluated in the areas of spectral resolution, baseline noise, stray light, and dynamic range, and a comparison is made with a state-of-the-art mechanically scanned instrument. In the study, the PDA spectrometer attained a signal-to-noise ratio two times better than that of the commercial instrument with a time efficiency advantage of twelve, while achieving a spectral resolution three times greater. Finally, the application of analyzing caustic brine solutions by rapid-scanning NIR spectroscopy is illustrated.

Analysis of electron-diffraction intensity profiles using a photodiode-array detection system

1983 ◽  
Vol 41 ◽  
pp. 322-323
Author(s):  
J. B. Warren
Keyword(s):  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Detection System ◽  
High Energy ◽  
Photographic Emulsion ◽  
Diffraction Intensity ◽  
Silicon Photodiode ◽  
Photodiode Array Detection ◽  
Analog To Digital ◽  
Photodiode Array

Electron diffraction intensity profiles have been used extensively in studies of polycrystalline and amorphous thin films. In previous work, diffraction intensity profiles were quantitized either by mechanically scanning the photographic emulsion with a densitometer or by using deflection coils to scan the diffraction pattern over a stationary detector. Such methods tend to be slow, and the intensities must still be converted from analog to digital form for quantitative analysis. The Instrumentation Division at Brookhaven has designed and constructed a electron diffractometer, based on a silicon photodiode array, that overcomes these disadvantages. The instrument is compact (Fig. 1), can be used with any unmodified electron microscope, and acquires the data in a form immediately accessible by microcomputer.Major components include a RETICON 1024 element photodiode array for the de tector, an Analog Devices MAS-1202 analog digital converter and a Digital Equipment LSI 11/2 microcomputer. The photodiode array cannot detect high energy electrons without damage so an f/1.4 lens is used to focus the phosphor screen image of the diffraction pattern on to the photodiode array.

scholarly journals A SILICON PHOTODIODE ARRAY DETECTOR COVERING A LARGE SOLID ANGLE FOR FLUORESCENCE EXAFS MEASUREMENTS FROM 2 TO 25 keV

1986 ◽  
Vol 47 (C8) ◽  
pp. C8-143-C8-147 ◽  
Author(s):  
A. RETOURNARD ◽  
M. LOOS ◽  
I. ASCONE ◽  
J. GOULON ◽  
M. LEMONNIER ◽  
...  
Keyword(s):  
Solid Angle ◽  
Array Detector ◽  
Silicon Photodiode ◽  
Photodiode Array Detector ◽  
Photodiode Array

Spatial Profiles of Emission from an Inductively Coupled Plasma Source Using a Self-Scanning Photodiode Array

1977 ◽  
Vol 31 (6) ◽  
pp. 536-541 ◽  
Author(s):  
T. E. Edmonds ◽  
Gary Horlick
Keyword(s):  
Flow Rate ◽  
Inductively Coupled Plasma ◽  
Neutral Atom ◽  
Line Emission ◽  
Plasma Source ◽  
Spatial Position ◽  
Silicon Photodiode ◽  
Inductively Coupled ◽  
Photodiode Array ◽  
Power Central

Detailed spatial profiles of analyte emission in an inductively coupled plasma source have been measured using a self-scanning linear silicon photodiode array mounted vertically in the exit focal plane of a monochromator. These profiles were measured for both neutral atom and ion lines of several elements as a function of plasma power, central axial (nebulizer) flow rate, and coolant flow rate. The plasma has complex but characteristic emission spatial patterns; patterns that are highly dependent, at the submillimeter level, on both flow and power parameters of the plasma. These data also indicate that the spatial position of peak neutral atom line emission may depend on analyte excitation and/or ionization characteristics while the spatial position of peak ion line emission appears to be species independent for those elements studied.

Ion‐implantation‐damage gettering effect in silicon photodiode array camera target

1973 ◽  
Vol 22 (5) ◽  
pp. 238-240 ◽  
Author(s):  
C.M. Hsieh ◽  
J.R. Mathews ◽  
H.D. Seidel ◽  
K.A. Pickar ◽  
C.M. Drum
Keyword(s):  
Ion Implantation ◽  
Silicon Photodiode ◽  
Implantation Damage ◽  
Photodiode Array ◽  
Array Camera
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