Low-Temperature Metal^|^#8211;Metal Bonding Process Using Leaf-Like Aggregates Composed of CuO Nanoparticles

2015 ◽  
Vol 48 (1) ◽  
pp. 1-6 ◽  
Author(s):  
Takafumi Maeda ◽  
Yoshio Kobayashi ◽  
Yusuke Yasuda ◽  
Toshiaki Morita
Keyword(s):  
Low Temperature ◽  
Bonding Process ◽  
Cuo Nanoparticles ◽  
Metal Bonding

Metal-Metal Bonding Process Using Ag2O/CuO Mixed Particles

2012 ◽  
Vol 622-623 ◽  
pp. 945-949 ◽  
Author(s):  
Takafumi Maeda ◽  
Yoshio Kobayashi ◽  
Yusuke Yasuda ◽  
Toshiaki Morita
Keyword(s):  
Bonding Process ◽  
Cuo Nanoparticles ◽  
Lateral Size ◽  
Metal Bonding ◽  
Longitudinal Size ◽  
Metal Metal

The present study describes metal-metal bonding process using mixture of CuO nanoparticles and Ag2O nanoparticles (Ag2O/CuO mixed particles). The leaf-like aggregates with a longitudinal size of 1116 nm and a lateral size of 460 nm composed of CuO nanoparticles with a size of ca. 10 nm and the Ag2O nanoparticles with a size of 20.6 nm were fabricated with a salt-base reaction. Metal-metal bonding could be successfully performed by using the mixed particles as a filler sandwiched between metallic discs and pressurizing the discs at 1.2 MPa for 5 min under annealing in H2 gas at 400oC. The mixed particles bonded not only metallic Cu discs but also metallic Ag discs strongly; The shear strengths were as large as 17.3 and 22.4 MPa for the Cu discs and the Ag discs, respectively.

scholarly journals Metal–Metal Bonding Process Using Cu+Ag Mixed Nanoparticles

2013 ◽  
Vol 54 (6) ◽  
pp. 879-883 ◽  
Author(s):  
Jianfeng Yan ◽  
Guisheng Zou ◽  
Yingchuan Zhang ◽  
Jiaxin Li ◽  
Lei Liu ◽  
...  
Keyword(s):  
Bonding Process ◽  
Metal Bonding ◽  
Mixed Nanoparticles

scholarly journals Metal–metal bonding process using cuprous oxide nanoparticles

2016 ◽  
Vol 5 (4) ◽  
pp. 345-352 ◽  
Author(s):  
Yoshio Kobayashi ◽  
Takafumi Maeda ◽  
Yusuke Yasuda ◽  
Toshiaki Morita
Keyword(s):  
Cuprous Oxide ◽  
Bonding Process ◽  
Oxide Nanoparticles ◽  
Metal Bonding ◽  
Cuprous Oxide Nanoparticles ◽  
Metal Metal

TLP Bonding Technologies for Micro Joining and 3D Packaging

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001221-001252 ◽  
Author(s):  
Kei Murayama ◽  
Mitsuhiro Aizawa ◽  
Mitsutoshi Higashi
Keyword(s):  
High Temperature ◽  
Melting Point ◽  
Low Temperature ◽  
Wafer Bonding ◽  
Bonding Process ◽  
Tlp Bonding ◽  
Hermetic Sealing ◽  
Low Temperature Bonding ◽  
Free Material ◽  
Bonding Technique

The bonding technique for High density Flip Chip(F.C.) packages requires a low temperature and a low stress process to have high reliability of the micro joining ,especially that for sensor MEMS packages requires hermetic sealing so as to ensure their performance. The Transient Liquid Phase (TLP) bonding, that is a kind of diffusion bonding is a technique that connects the low melting point material such as Indium to the higher melting point metal such as Gold by the isothermal solidification and high-melting-point intermetallic compounds are formed. Therefore, it is a unique joining technique that can achieve not only the low temperature bonding and also the high temperature reliability. The Gold-Indium TLP bonding technique can join parts at 180 degree C and after bonding the melting point of the junction is shifted to more than 495 degree C, therefore itfs possible to apply the low temperature bonding lower than the general use as a lead free material such as a SAC and raise the melting point more than AuSn solder which is used for the high temperature reliability usage. Therefore, the heat stress caused by bonding process can be expected to be lowered. We examined wafer bonding and F.C bonding plus annealing technique by using electroplated Indium and Gold as a joint material. We confirmed that the shear strength obtained at the F.C. bonding plus anneal technique was equal with that of the wafer bonding process. Moreover, it was confirmed to ensure sufficient hermetic sealing in silicon cavity packages that had been bonded at 180 degree C. And the difference of the thermal stress that affect to the device by the bonding process was confirmed. In this paper, we report on various possible application of the TLP bonding.

Low Temperature Wafer Level Bonding Using Benzocyclobutene Adhesive Polymers

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 1-24
Author(s):  
Michael Gallagher ◽  
Jong-Uk Kim ◽  
Eric Huenger ◽  
Kai Zoschke ◽  
Christina Lopper ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Flip Chip ◽  
Bonding Temperature ◽  
Bonding Process ◽  
Curing Temperature ◽  
Wafer Level ◽  
Mechanical Adhesion ◽  
3D Stacking ◽  
Dry Etch

3D stacking, one of the 3D integration technologies using through silicon vias (TSVs), is considered as a desirable 3D solution due to its cost effectiveness and matured technical background. For successful 3D stacking, precisely controlled bonding of the two substrates is necessary, so that various methods and materials have been developed over the last decade. Wafer bonding using polymeric adhesives has advantages. Surface roughness, which is critical in direct bonding and metal-to-metal bonding, is not a significant issue, as the organic adhesive can smooth out the unevenness during bonding process. Moreover, bonding of good quality can be obtained using relatively low bonding pressure and low bonding temperature. Benzocyclobutene (BCB) polymers have been commonly used as bonding adhesives due to their relatively low curing temperature (~250 °C), very low water uptake (<0.2%), excellent planarizing capability, and good affinity to Cu metal lines. In this study, we present wafer bonding with BCB at various conditions. In particular, bonding experiments are performed at low temperature range (180 °C ~ 210 °C), which results in partially cured state. In order to examine the effectiveness of the low temperature process, the mechanical (adhesion) strength and dimensional changes are measured after bonding, and compared with the values of the fully cured state. Two different BCB polymers, dry-etch type and photo type, are examined. Dry etch BCB is proper for full-area bonding, as it has low degree of cure and therefore less viscosity. Photo-BCB has advantages when a pattern (frame or via open) is to be structured on the film, since it is photoimageable (negative tone), and its moderate viscosity enables the film to sustain the patterns during the wafer bonding process. The effect of edge beads at the wafer rim area and the soft cure (before bonding) conditions on the bonding quality are also studied. Alan/Rey ok move from Flip Chip and Wafer Level Packaging 1-6-12.

scholarly journals Low Temperature Bonding Process Using Cu Nanoparticles and Mixed Ag-Cu Nanoparticles

2010 ◽  
Vol 13 (7) ◽  
pp. 536-542
Author(s):  
Masami Nakamoto ◽  
Toru Nagaoka ◽  
Yoshiaki Morisada ◽  
Masao Fukusumi ◽  
Yukiyasu Kashiwagi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Bonding Process ◽  
Cu Nanoparticles ◽  
Low Temperature Bonding

Low Temperature Direct Cu-Cu Immersion Bonding for 3D Integration

2009 ◽  
Vol 1156 ◽  
Author(s):  
Rahul Agarwal ◽  
Wouter Ruythooren
Keyword(s):  
Citric Acid ◽  
Low Temperature ◽  
Bonding Temperature ◽  
Atmospheric Condition ◽  
High Strength ◽  
Bonding Process ◽  
3D Integration ◽  
Temperature And Pressure ◽  
Low Temperature Bonding

AbstractHigh yielding and high strength Cu-Cu thermo-compression bonds have been obtained at temperatures as low as 175°C. Plated Cu bumps are used for bonding, without any surface planarization step or plasma treatment, and bonding is performed at atmospheric condition. In this work the 25μm diameter bumps are used at a bump pitch of 100μm and 40μm. Low temperature bonding is achieved by using immersion bonding in citric acid. Citric acid provides in-situ cleaning of the Cu surface during the bonding process. The daisy chain electrical bonding yield ranges from 84%-100% depending on the bonding temperature and pressure.

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