Effect of Sputtering Power on in vitro Bioactivity of Zirconia Thin Films Obtained by DC Unbalanced Magnetron Sputtering

2013 ◽  
Vol 46 (1) ◽  
pp. 79-86 ◽  
Author(s):  
Arisara Thaveedeetrakul ◽  
Nirun Witit-Anun ◽  
Virote Boonamnuayvitaya
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
In Vitro Bioactivity ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron ◽  
Sputtering Power

Hydrogen-free carbon thin films prepared by unbalanced magnetron sputtering

2006 ◽  
Author(s):  
Junqi Xu ◽  
Lingxia Hang ◽  
Weiguo Liu ◽  
Huiqing Fan ◽  
Yingxue Xing
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Free Carbon ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron ◽  
Carbon Thin Films

scholarly journals Structure and Properties of Nanocrystalline (TiZr)xN1−xThin Films Deposited by DC Unbalanced Magnetron Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-12 ◽  
Author(s):  
Yu-Wei Lin ◽  
Chia-Wei Lu ◽  
Ge-Ping Yu ◽  
Jia-Hong Huang
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Nitrogen Flow ◽  
Structure And Properties ◽  
X Ray Diffraction ◽  
Nitrogen Flow Rate ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron

This study aims to investigate the effects of nitrogen flow rate (0–2.5 sccm) on the structure and properties of TiZrN films. Nanocrystalline TiZrN thin films were deposited on Si (001) substrates by unbalanced magnetron sputtering. The major effects of the nitrogen flow rate were on the phase, texture, N/(Ti + Zr) ratio, thickness, hardness, residual stress, and resistivity of the TiZrN films. The nitrogen content played an important role in the phase transition. With increasing nitrogen flow rate, the phase changed from mixed TiZr and TiZrN phases to a single TiZrN phase. The X-ray diffraction results indicated that (111) was the preferred orientation for all TiZrN specimens. The N/(Ti + Zr) ratio of the TiZrN films first increased with increasing nitrogen flow rate and then stabilized when the flow rate further increased. When the nitrogen flow rate increased from 0.4 to 1.0 sccm, the hardness and residual stress of the TiZrN thin film increased, whereas the electrical resistivity decreased. None of the properties of the TiZrN thin films changed with nitrogen flow rate above 1.0 sccm because the films contained a stable single phase (TiZrN). At high nitrogen flow rates (1.0–2.5 sccm), the average hardness and resistivity of the TiZrN thin films were approximately 36 GPa and 36.5 μΩ·cm, respectively.

Influence of oxygen percentage on in vitro bioactivity of zirconia thin films obtained by RF magnetron sputtering

2020 ◽  
Vol 532 ◽  
pp. 147403
Author(s):  
Hind Zegtouf ◽  
Nadia Saoula ◽  
Mourad Azibi ◽  
Samira Sali ◽  
Hanane Mechri ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
In Vitro Bioactivity ◽  
Oxygen Percentage

Cytocompatibility of Fe-O Thin Film Prepared by Unbalanced Magnetron Sputtering

2015 ◽  
Vol 815 ◽  
pp. 390-395
Author(s):  
Yan Qiu Liu ◽  
Hong Sun ◽  
Xin Li ◽  
Nan Huang
Keyword(s):  
Endothelial Cells ◽  
Magnetron Sputtering ◽  
Pure Iron ◽  
Umbilical Vein ◽  
Single Crystal Silicon ◽  
Film Surface ◽  
Crystal Silicon ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron

In order to improve the cell biocompatibility of pure iron surface as cardio-vascular stent material, Fe-O film was deposited on single crystal silicon by unbalanced magnetron sputtering. Human umbilical vein endothelial cells were seeded on the 316L SS, pure iron and Fe-O film surface, whereafter cultured in vitro. Adhesion behavior was detected after 2 h incubation. Cell morphology and proliferation activities were assessed at 1, 3 and 5 days. The results show that the endothelial cells are easy to adhere and spread on the surface of Fe-O film. Compared with 316L SS samples, the cells count and area coverage of Fe-O film in 1 and 5 days make a difference significantly. These results demonstrated that the Fe-O film prepared by unbalanced magnetron sputtering technique has good cytocompatibility.

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