scholarly journals Acoustic signature of stress waves emerged by target with direct or confined geometry in Q-switched nanosecond pulse laser irradiation

2013 ◽  
Vol 34 (3) ◽  
pp. 206-208
Author(s):  
Motoaki Nishiwaki ◽  
Mieko Kogi ◽  
Yoshiaki Tokunaga
Keyword(s):  
Laser Irradiation ◽  
Pulse Laser ◽  
Stress Waves ◽  
Nanosecond Pulse ◽  
Confined Geometry ◽  
Pulse Laser Irradiation ◽  
Acoustic Signature ◽  
Nanosecond Pulse Laser

The influence of nanosecond pulse laser irradiation on the properties of a-C:H films

Vacuum ◽  
2008 ◽  
Vol 82 (11) ◽  
pp. 1212-1215 ◽  
Author(s):  
A. Grigonis ◽  
Ž. Rutkunienė ◽  
A. Medvids
Keyword(s):  
Laser Irradiation ◽  
Pulse Laser ◽  
Nanosecond Pulse ◽  
Pulse Laser Irradiation ◽  
Nanosecond Pulse Laser

Study on Nonlinear Absorption Effect of Nanosecond Pulse Laser Irradiation for GaAs

2016 ◽  
Vol 16 (4) ◽  
pp. 3895-3898
Author(s):  
Wenjun Sun ◽  
Zhongyang Liu ◽  
Haijiao Zhou
Keyword(s):  
Laser Irradiation ◽  
Power Density ◽  
Pulse Laser ◽  
Free Carrier ◽  
Semiconductor Material ◽  
Photon Absorption ◽  
Free Carrier Absorption ◽  
Pulse Laser Irradiation ◽  
Carrier Absorption ◽  
Nanosecond Pulse Laser

In order to research nonlinear absorption effect of pulse laser irradiation for GaAs, a physical model of Gaussian distribution pulse laser irradiation for semiconductor material was established by software COMSOL Multiphysics. The thermal effects of semiconductor material GaAs was analyzed under irradiation of nanosecond pulse laser with wavelength of 1064 nm. The radial and transverse temperature distribution of semiconductor material GaAs was calculated under irradiation of nanosecond pulse laser with different power density by solving the thermal conduction equations. The contribution of one-photon absorption, two-photon absorption and free carrier absorption to temperature of GaAs material were discussed. The results show that when the pulse laser power density rises to 1010 W/cm2, free carrier absorption played a leading role and it was more than that of one-photon absorption of material. The temperature contribution of two-photon absorption and free carrier absorption could be ignored at laser power density lower than 108 W/cm2.The result is basically consistent with relevant experiments, which shows that physical model constructed is valid.

Polarization-dependent Memory of Light via Ultrashort Pulse Laser Irradiation

PIERS Online ◽  
2008 ◽  
Vol 4 (2) ◽  
pp. 221-226
Author(s):  
Yasuhiko Shimotsuma ◽  
Masaaki Sakakura ◽  
Peter G. Kazansky ◽  
Jianrong Qiu ◽  
Kiyotaka Miura ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Pulse Laser ◽  
Ultrashort Pulse ◽  
Pulse Laser Irradiation ◽  
Ultrashort Pulse Laser
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