Fabrication of a Shear Force-based Ion-selective Capillary Probe for Scanning Electrochemical Microscopy

2008 ◽  
Vol 37 (4) ◽  
pp. 392-393 ◽  
Author(s):  
Hiroshi Yamada ◽  
Yuuya Ikuta ◽  
Tohru Koike ◽  
Tomokazu Matsue
Keyword(s):  
Shear Force ◽  
Scanning Electrochemical Microscopy ◽  
Electrochemical Microscopy

Feedback-Independent Pt Nanoelectrodes for Shear Force-Based Constant-Distance Mode Scanning Electrochemical Microscopy

2006 ◽  
Vol 78 (20) ◽  
pp. 7317-7324 ◽  
Author(s):  
Mathieu Etienne ◽  
Emily C. Anderson ◽  
Stephanie R. Evans ◽  
Wolfgang Schuhmann ◽  
Ingrid Fritsch
Keyword(s):  
Shear Force ◽  
Scanning Electrochemical Microscopy ◽  
Constant Distance ◽  
Electrochemical Microscopy

Electrode Fabrication for Scanning Electrochemical Microscopy and Shear Force Imaging

2016 ◽  
Author(s):  
Robert Northcutt ◽  
Jacob Maddox ◽  
Vishnu-Baba Sundaresan
Keyword(s):  
High Resolution ◽  
Shear Force ◽  
Signal To Noise Ratio ◽  
Measurement Techniques ◽  
Scanning Electrochemical Microscopy ◽  
Fabrication Process ◽  
Signal To Noise ◽  
Measurement Systems ◽  
Noise Ratio ◽  
Electrochemical Microscopy

The development of novel characterization techniques is critical for understanding the fundamentals of material systems. Bioinspired systems are regularly implemented but poorly defined through quantitative measurement. In an effort to specify the coupling between multiple domains seen in biologically inspired systems, high resolution measurement systems capable of simultaneously measuring various phenomena such as electrical, chemical, mechanical, or optical signals is required. Scanning electrochemical microscopy (SECM) and shear-force (SF) imaging are nanoscale measurement techniques which examine the electrochemical behavior at a liquid-solid or liquid-liquid interface and simultaneously probe morphological features. It is therefore a suitable measurement technique for understanding biological phenomena. SF imaging is a high resolution technique, allowing for nanoscale measurement of extensional actuation in materials with high signal to noise ratio. The sensing capabilities of SECM-SF techniques are dependent on the characteristics of the micro-scale electrodes (ultramicroelectrodes or UMEs) used to investigate surfaces. Current limitations to this technique are due to the fabrication process which introduces structural damping, reducing the signal produced. Additionally, despite the high cost of materials and processing, contemporary processes only produce a 10% yield. This article demonstrates a UME fabrication process with a 60% yield as well as improved amplitude (250% increase) and sensitivity (210% increase) during SF imaging. This process is expected to improve the signal to noise ratio of SF-based measurement systems. With these improvements, SECM-SF could become a more suitable technique for measuring cell or tissue activity, corrosion of materials, or coupled mechanics of synthetic faradaic materials.

A structural model of ultra-microelectrodes for shear-force based scanning electrochemical microscopy

2018 ◽  
Vol 29 (18) ◽  
pp. 3562-3571 ◽  
Author(s):  
Vijay Venkatesh ◽  
Robert Northcutt ◽  
Christian Heinemann ◽  
Vishnu Baba Sundaresan
Keyword(s):  
Finite Element ◽  
Finite Element Model ◽  
Shear Force ◽  
Structural Model ◽  
Structural Response ◽  
Scanning Electrochemical Microscopy ◽  
Element Model ◽  
Experimental Methodology ◽  
Piezoelectric Wafers ◽  
Electrochemical Microscopy

The incorporation of a shear-force (SF) feedback in scanning electrochemical microscopy (SECM) hardware has enabled topographically resolved electrochemical imaging of electroactive substrates. Despite the versatility of SECM-SF imaging, structural response of the ultra-microelectrode (UME) to various excitation inputs is poorly understood and predictive mathematical models for characterizing dynamic behavior, particularly at high operating frequencies (>100 kHz), are absent. In this article, we present a finite element model to characterize SF behavior by modeling the UME as a rigid cantilever with two distributed piezoelectric wafers (dither and receiver) and demonstrate the model’s ability to predict experimentally observed SF behavior. The obtained SF response under different dither-to-receiver distances for various UME geometries and loading conditions provides insight to the optimum placement of piezoelectric wafers on the UME for achieving a high SF amplitude at SF-sensitive frequencies. In addition, the variations in SF response under different dither-to-receiver orientations indicate the existence of a system transfer function that is dependent on the operating modes of the receiver. The agreement between simulated and experimental results suggests that the finite element model along with the experimental methodology can be extended to automated SF imaging using SECM hardware.

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