Acid–Base Property of Ethylammonium Nitrate Ionic Liquid Directly Obtained Using Ion-selective Field Effect Transistor Electrode

2007 ◽  
Vol 36 (5) ◽  
pp. 684-685 ◽  
Author(s):  
Ryo Kanzaki ◽  
Kuniaki Uchida ◽  
Shota Hara ◽  
Yasuhiro Umebayashi ◽  
Shin-ichi Ishiguro ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Acid Base ◽  
Base Property ◽  
Ethylammonium Nitrate ◽  
Effect Transistor ◽  
Acid Base Property

Chemically Sensitive Field-Effect Transistor with Polyaniline–Ionic Liquid Composite Gate

2008 ◽  
Vol 80 (11) ◽  
pp. 4214-4219 ◽  
Author(s):  
Amir Saheb ◽  
Mira Josowicz ◽  
Jiří Janata
Keyword(s):  
Ionic Liquid ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

scholarly journals Determination of pH Value and Acid-base Property of Ionic Liquid Aqueous Solutions

2014 ◽  
Vol 72 (4) ◽  
pp. 495 ◽  
Author(s):  
Cuilian Yang ◽  
Lixia Huangfu ◽  
Hang Su ◽  
Kaihua Guo
Keyword(s):  
Ionic Liquid ◽  
Aqueous Solutions ◽  
Ph Value ◽  
Acid Base ◽  
Base Property ◽  
Acid Base Property

scholarly journals Ionic liquid gated poly(triaryl amine) thin film field effect transistor

2020 ◽  
pp. 50361
Author(s):  
Luis M. Rijos ◽  
Kelotchi S. Figueroa ◽  
Angelo Porcu ◽  
Naomi M. Rivera ◽  
Anamaris Meléndez ◽  
...  
Keyword(s):  
Thin Film ◽  
Ionic Liquid ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Ionic Liquid Gating of Suspended MoS2 Field Effect Transistor Devices

Nano Letters ◽  
2015 ◽  
Vol 15 (8) ◽  
pp. 5284-5288 ◽  
Author(s):  
Fenglin Wang ◽  
Petr Stepanov ◽  
Mason Gray ◽  
Chun Ning Lau ◽  
Mikhail E. Itkis ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

scholarly journals Ionic Liquid Gating of Semiconductor Nanostructure-Based Devices

Proceedings ◽  
2018 ◽  
Vol 3 (1) ◽  
pp. 5
Author(s):  
Johanna Lieb ◽  
Valeria Demontis ◽  
Domenic Prete ◽  
Daniele Ercolani ◽  
Valentina Zannier ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Semiconductor Nanostructure ◽  
Sem Micrograph ◽  
Effect Transistor

The operation of an ionic liquid-gated field effect transistor based on a single InAs nanowire—as represented in the SEM micrograph Figure 1b and pictorially in Figure 1c—is demonstrated. [...]

Structure, solvation, and acid–base property in ionic liquids

2010 ◽  
Vol 82 (10) ◽  
pp. 1927-1941 ◽  
Author(s):  
Shin-ichi Ishiguro ◽  
Yasuhiro Umebayashi ◽  
Ryo Kanzaki ◽  
Kenta Fujii
Keyword(s):  
Ionic Liquids ◽  
Metal Ion ◽  
Lithium Ion ◽  
Liquid Structure ◽  
Solution Chemistry ◽  
Acid Dissociation ◽  
Acid Base ◽  
Base Property ◽  
Ethylammonium Nitrate ◽  
Acid Base Property

Ionic liquids (ILs) are expected to have specific properties as solvents for chemical reactions in view of solution chemistry. Among physicochemical properties, liquid structure, acid–base, and electron-pair donating and accepting abilities of solvent play a crucial role in ion-solvation and acid–base, metal-ion complexation, and electrochemical reactions. Various types of ILs have been developed, and among others, the bis(trifluoromethanesulfonyl)amide (TFSA–)-based ILs are extensively used. TFSA– is a flexible molecule to give two stable conformers, cis (C1) and trans (C2), which are present in equilibrium in the liquid state. The conformational equilibrium shifts upon solvation to the metal ion. This is quantitatively studied to obtain thermodynamic parameters of conformational change from C2 to C1 in the bulk and in the solvation sphere of the lithium ion. On the other hand, with ethylammonium nitrate (EAN), a typical protic IL, it is revealed that the ammonium group is hydrogen-bonded with three nitrate ions to form a heterogeneous liquid structure. The solvent acid–base property of EAN and acid dissociation reaction in EAN have been quantitatively revealed, and the results will be discussed in comparison with those in normal molecular solvents.

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