Preparation of Boron-containing TON-Type Zeolite by Self-transformation of Porous Glass in a Vapor Phase

2002 ◽  
Vol 31 (3) ◽  
pp. 374-375 ◽  
Author(s):  
Wei-Yang Dong ◽  
Xi-Peng Qiu ◽  
Yu Ren ◽  
Ying-Cai Long
Keyword(s):  
Vapor Phase ◽  
Porous Glass ◽  
Type Zeolite

scholarly journals On the Role of MFI Membranes During the Shape Preserving Transformation of Porous Glass into MFI-type Zeolite

2012 ◽  
Vol 44 ◽  
pp. 1141-1142
Author(s):  
T. Peppel ◽  
S. Wohlrab ◽  
B. Paul ◽  
R. Kraehnert ◽  
D. Enke
Keyword(s):  
Porous Glass ◽  
Shape Preserving ◽  
Type Zeolite

Shape-preserving transformation of monolithic porous glass into MFI-type zeolite

2012 ◽  
Vol 158 ◽  
pp. 180-186 ◽  
Author(s):  
Tim Peppel ◽  
Benjamin Paul ◽  
Ralph Kraehnert ◽  
Dirk Enke ◽  
Bernhard Lücke ◽  
...  
Keyword(s):  
Porous Glass ◽  
Shape Preserving ◽  
Type Zeolite

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

191. Planar Waveguide Interferometers for Vapor Phase Sensing

1999 ◽  
Author(s):  
C. Joseph ◽  
D. Campbell ◽  
J. Suggs ◽  
J. Moore ◽  
N. Hartman
Keyword(s):  
Vapor Phase ◽  
Planar Waveguide
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