scholarly journals Catalytic Properties of Silica-Alumina Prepared by Chemical Vapor Deposition

1987 ◽  
Vol 16 (8) ◽  
pp. 1535-1536 ◽  
Author(s):  
Satoshi Sato ◽  
Masato Toita ◽  
Yu-Qing Yu ◽  
Toshiaki Sodesawa ◽  
Fumio Nozaki
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Catalytic Properties ◽  
Chemical Vapor ◽  
Silica Alumina

Facile synthesis of triple Ni-Mo-W alloys and their catalytic properties in chemical vapor deposition of chlorinated hydrocarbons

2021 ◽  
Vol 866 ◽  
pp. 158778
Author(s):  
Yury V. Shubin ◽  
Yury I. Bauman ◽  
Pavel E. Plyusnin ◽  
Ilya V. Mishakov ◽  
Maria S. Tarasenko ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Catalytic Properties ◽  
Chlorinated Hydrocarbons ◽  
Chemical Vapor ◽  
Facile Synthesis

Progress in Catalytic Preparation of Carbon/Carbon Composites

2013 ◽  
Vol 634-638 ◽  
pp. 2004-2008
Author(s):  
Bing Ju Li ◽  
Jun Li ◽  
Lei Shi ◽  
Zhou Jian Tan ◽  
Ji Qiao Liao
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Catalytic Properties ◽  
Low Cost ◽  
Chemical Vapor ◽  
Carbon Composites ◽  
Catalytic Chemical Vapor Deposition ◽  
Vapor Deposition Technique ◽  
Development Tendency ◽  
Published Research

This paper reviewed published research into catalytic fabrication techniques and recent progresses of carbon/carbon (C/C) composites. It’s described the catalytic chemical vapor deposition theory and reviewed the catalytic properties of different metal catalysts. Merits and demerits of the traditional chemical vapor deposition, improved chemical vapor deposition and other new rapid densification techniques were analyzed. The new densification techniques are to shorten the preparation cycle, but most of them are limited in the laboratory with application problems. Finally, the prospect on the application and development tendency of improved catalytic chemical vapor deposition technique is put forward in the rapid low cost fabrication of C/C composites in the future.

scholarly journals Synthesis of Silica Membranes by Chemical Vapor Deposition Using a Dimethyldimethoxysilane Precursor

Membranes ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 50 ◽  
Author(s):  
S. Ted Oyama ◽  
Haruki Aono ◽  
Atsushi Takagaki ◽  
Takashi Sugawara ◽  
Ryuji Kikuchi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Composite Membranes ◽  
Hydrothermal Conditions ◽  
Porous Support ◽  
Silica Membranes ◽  
Silica Alumina ◽  
Alumina Composite ◽  
The Stability

Silica-based membranes prepared by chemical vapor deposition of tetraethylorthosilicate (TEOS) on γ-alumina overlayers are known to be effective for hydrogen separation and are attractive for membrane reactor applications for hydrogen-producing reactions. In this study, the synthesis of the membranes was improved by simplifying the deposition of the intermediate γ-alumina layers and by using the precursor, dimethyldimethoxysilane (DMDMOS). In the placement of the γ-alumina layers, earlier work in our laboratory employed four to five dipping-calcining cycles of boehmite sol precursors to produce high H2 selectivities, but this took considerable time. In the present study, only two cycles were needed, even for a macro-porous support, through the use of finer boehmite precursor particle sizes. Using the simplified fabrication process, silica-alumina composite membranes with H2 permeance > 10−7 mol m−2 s−1 Pa−1 and H2/N2 selectivity >100 were successfully synthesized. In addition, the use of the silica precursor, DMDMOS, further improved the H2 permeance without compromising the H2/N2 selectivity. Pure DMDMOS membranes proved to be unstable against hydrothermal conditions, but the addition of aluminum tri-sec-butoxide (ATSB) improved the stability just like for conventional TEOS membranes.

Solid-state NMR of silica—alumina prepared by chemical vapor deposition

1991 ◽  
Vol 66 (3) ◽  
pp. 343-355 ◽  
Author(s):  
Satoshi Sato ◽  
Toshiaki Sodesawa ◽  
Fumio Nozaki ◽  
Hiroshi Shoji
Keyword(s):  
Chemical Vapor Deposition ◽  
Solid State ◽  
Vapor Deposition ◽  
Solid State Nmr ◽  
Chemical Vapor ◽  
Silica Alumina

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Coating of continuous carbon fibers with double layers by chemical vapor deposition

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-885-Pr3-892 ◽  
Author(s):  
N. Popovska ◽  
S. Schmidt ◽  
E. Edelmann ◽  
V. K. Wunder ◽  
H. Gerhard ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Fibers ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Double Layers
Sign in / Sign up

Export Citation Format

Share Document