scholarly journals PRESSURE EFFECT ON β RELAXATION PROCESS IN CHLORINATED POLYETHYLENE AND POLYVINYLACETATE

1973 ◽  
Vol 2 (12) ◽  
pp. 1269-1270
Author(s):  
Motosuke Naoki ◽  
Atsuro Kokubo ◽  
Takuhei Nose
Keyword(s):  
Relaxation Process ◽  
Pressure Effect ◽  
Chlorinated Polyethylene ◽  
Β Relaxation

Dielectric, TSC and Electromechanical Measurements on some Prospective NLO Polymers

1989 ◽  
Vol 175 ◽  
Author(s):  
Paul L. Carr ◽  
Geoff R. Davies ◽  
Ian M. Ward
Keyword(s):  
Relaxation Process ◽  
Applied Field ◽  
Strong Interactions ◽  
Host System ◽  
Poling Process ◽  
Β Relaxation ◽  
The Stability

AbstractThe pyroelectric coefficients of a range of polymers with a methacrylate backbone and nitrostilbene or nitrobipheny mesogens attached by a 3 or 6 carbon spacer have been measured in order to assess the efficiency of the poling process. It is found that the response is much lower than the guest-host system MNA in PMMA, suggesting that the polar mesogens pack anti-parallel and that this alignment is not broken by the applied field.These strong interactions also provide an explanation for the absence of the β relaxation process in the experimental polymers and therefore the brittle nature of the films. They may also explain the stability of the polarisation achieved.

Dielectric study on β-relaxation process of tetramethyl-bisphenol-A polycarbonate

1998 ◽  
Vol 235-237 ◽  
pp. 412-415 ◽  
Author(s):  
S. Yagihara ◽  
M. Yamada ◽  
M. Asano ◽  
Y. Kanai ◽  
N. Shinyashiki ◽  
...  
Keyword(s):  
Bisphenol A ◽  
Relaxation Process ◽  
Dielectric Study ◽  
Bisphenol A Polycarbonate ◽  
Β Relaxation

UHV-STM studies of silicon nano-pyramid growth on silicon surface at high temperature

1992 ◽  
Vol 50 (2) ◽  
pp. 1144-1145
Author(s):  
T. Sato ◽  
S. Kitamura ◽  
T. Sueyoshl ◽  
M. Iwatukl ◽  
C. Nielsen
Keyword(s):  
High Temperature ◽  
Relaxation Process ◽  
Thermal Effect ◽  
Bias Voltage ◽  
Silicon Surface ◽  
Growth Process ◽  
Tunneling Current ◽  
Fabrication Technique ◽  
Nano Fabrication ◽  
Electromigration Effect

Recently, the growth process and relaxation process of crystalline structures were studied by observing a SI nano-pyramid which was built on a Si surface with a UHV-STM. A UHV-STM (JEOL JSTM-4000×V) was used for studying a heated specimen, and the specimen was kept at high temperature during observation. In this study, the nano-fabrication technique utilizing the electromigration effect between the STM tip and the specimen was applied. We observed Si atoms migrated towords the tip on a high temperature Si surface.Clean surfaces of Si(lll)7×7 and Si(001)2×l were prepared In the UHV-STM at a temperature of approximately 600 °C. A Si nano-pyramid was built on the Si surface at a tunneling current of l0nA and a specimen bias voltage of approximately 0V in both polarities. During the formation of the pyramid, Images could not be observed because the tip was stopped on the sample. After the formation was completed, the pyramid Image was observed with the same tip. After Imaging was started again, the relaxation process of the pyramid started due to thermal effect.

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